Patent classifications
H10K30/83
Photovoltaic cells comprising a layer of crystalline non-centrosymmetric light-absorbing material and a plurality of electrodes to collect ballistic carriers
The present invention is directed to photovoltaic and photogalvanic devices and methods of generating electrical energy and power or detecting light therefrom, based on a novel nano-enhanced bulk photovoltaic effect using non-centrosymmetric crystals, including ferroelectric and piezoelectric materials, where the non-centrosymmetry is the equilibrium state or it is static or dynamically induced. In certain embodiments, the device comprises a layer of non-centrosymmetric crystalline materials, and a plurality of electrodes disposed in an array upon or penetrating into at least one surface of the crystalline material, the electrodes being optimally spaced to capture the ballistic carriers generated upon irradiation of the crystalline material.
Photoelectric conversion devices and organic sensors and electronic devices
A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an inorganic nanolayer between the first electrode and the photoelectric conversion layer and including a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy thereof. An organic CMOS image sensor may include the photoelectric conversion device. An electronic device may include the organic CMOS image sensor.
Image pickup device and electronic apparatus
An image pickup device includes: a first electrode film; an organic photoelectric conversion film; a second electrode film; and a metal wiring film electrically connected to the second electrode film, the first electrode film, the organic photoelectric conversion film, and the second electrode film all provided on a substrate in this order, and the metal wiring film coating an entire side of the organic photoelectric conversion film.
Thin-Film Photovoltaic Cell
A photovoltaic device is provided that comprises a photovoltaic active zone being formed of a stack of thin films comprising a first electrode, an absorber film and a metallic electrode. A collection gate is arranged in contact with the first electrode to reduce its electrical resistance and avoid direct physical or electrical contact with the metallic electrode. The photovoltaic active zone includes a plurality of channels, made in the metallic electrode and the absorber film. The collection gate is separated from the metallic electrode and from the absorber film by a dielectric material.
Semi-transparent thin-film photovoltaic mono cell
The invention relates to a photovoltaic mono cell that is semi-transparent to light, comprising a plurality of active photovoltaic zones that are separated by transparent zones, said active photovoltaic zones being formed from a stack of thin films arranged on a substrate that is transparent to light, said stack of thin films consisting at least of a transparent electrode, an absorber layer and a metal electrode, said transparent zones being apertures produced at least in the metal electrode and in the absorber layer in order to allow as much light as possible to pass, characterized in that it furthermore comprises an electrically conductive collecting gate arranged either making contact with the front electrode in order to decrease the electrical resistance of the transparent electrode, or making contact with the absorber in order to facilitate collection of the electrical current generated by said mono cell.
Heterojunction perovskite photovoltaic devices and methods of making the same
An aspect of the present disclosures is a method that includes applying a perovskite precursor solution to a first solid conductor and treating the perovskite precursor solution such that a first portion of the perovskite precursor solution is converted to a first solid perovskite, where the first solid conductor comprises a first charge transport characteristic, which is predominantly p-type or predominantly n-type, and the treating results in the first solid perovskite having a second charge transport characteristic that is substantially the same as the first charge transport characteristic.
Organic Photovoltaic Device Having a Lateral Charge Transport Channel
Organic photovoltaic cells (OPVs) and their compositions are described herein. In one or more embodiments, the OPV or solar cell includes a first electrode (e.g., cathode); a second electrode (e.g., anode); an active layer positioned between the first electrode and the second electrode; and a channel layer positioned between the first electrode and the active layer, wherein the channel layer is configured to laterally disperse a charge across the channel layer. In certain examples, the first electrode is arranged in a grid structure having a plurality of electrode segments and a respective opening between adjacent segments of the first electrode.
Detecting element and detector
According to an embodiment, a detecting element includes a first electrode, a second electrode, an organic conversion layer, a third electrode. The first electrode and the third electrode are configured to keep different potentials by DC power supply. The organic conversion layer is disposed in between the first electrode and the second electrode, and is configured to convert energy of radiation into electrical charge. The third electrode is disposed at least either in the organic conversion layer, or in between the organic conversion layer and the first electrode, or in between the organic conversion layer and the second electrode, and is at least partially covered by an insulating film.
Photo sensor for use as a radiation detector and power supply and method for making and using the device
An apparatus is disclosed herein comprising one or more optically reflective materials, one or more electrodes, one or more photodetecting materials, and one or more substrates. At least one optically reflective material is electrically insulating, and the electrodes are positioned adjacent to the insulating optically reflective material. Additionally, the photodetecting materials are positioned on the substrates and are adjacent to the one or more electrodes. A method is disclosed comprising providing one or more photodetecting materials positioned on one or more substrates, placing one or more electrodes adjacent to the photodetecting materials, and placing one or more optically reflective materials adjacent to the electrodes and/or substrate. At least one optically reflective material is electrically insulating, and the insulating optically reflective material is placed adjacent to the electrodes. A method is also disclosed comprising providing an apparatus as above and using the apparatus.
Light emitting diode chip and fabrication method
A light-emitting diode chip includes a light-emitting epitaxial laminated layer including a first-type semiconductor layer, a second-type semiconductor layer, and an active layer therebetween, wherein the light-emitting epitaxial laminated layer has a first surface and an opposing second surface, and wherein the second surface is a light-emitting surface; a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer and having first geometric pattern arrays; a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer and having second geometric pattern arrays; and a transparent current spreading layer over a surface of the second electrical connection layer; wherein, when external power is connected, a horizontal resistance of a current passing through the transparent current spreading layer is less than a current passing through the second electrical connection layer.