The present invention relates to an organic light emitting diode, comprising: a first electrode; an organic material layer which comprises a hole transport layer, an electron transport layer and an light emitting layer, wherein the hole transport layer may be interposed between the first electrode and the light emitting layer, and the light emitting layer may be interposed between the hole transport layer and the electron transport layer; a second electrode which is disposed on the organic material layer; and a carrier conversion layer which may be interposed between the first electrode and the hole transport layer or between the second electrode and the electron transport layer; wherein the carrier conversion layer has a thickness of 10 nm to 200 nm.

Provided is a compound of Chemical Formula 1:

##STR00001## wherein: each X is independently N or CH, provided that at least one X is N; Y is O or S; each Ar is independently substituted or unsubstituted: C.sub.6-60 aryl or C.sub.5-60 heteroaryl containing N, O or S; each R.sub.1, R.sub.2, R.sub.3, and R.sub.4 independently is hydrogen, deuterium, halogen, cyano, or substituted or unsubstituted: C.sub.1-60 alkyl, C.sub.1-60 alkoxy, C.sub.2-60 alkenyl, C.sub.2-60 alkynyl, C.sub.3-60 cycloalkyl, C.sub.6-60 aryl, or C.sub.2-60 heteroaryl containing N, O or S, or two adjacent R.sub.4S combine to form a C.sub.4-60 aliphatic or aromatic ring; n1, n2, and n3 are each independently 0 or 1, and n4 is 1 to 4, provided that at least one of Ar is substituted with deuterium, or at least one of R.sub.1, R.sub.2, R.sub.3, or R.sub.4 is, or is substituted with, one or more deuterium, and an organic light-emitting diode comprising same.

Pixels each including a light emitting unit formed by laminating a first electrode, an organic layer, and a second electrode are arranged in a two-dimensional matrix. The organic layer includes multiple light emitting layers of different types and a light emission separation layer. Each of the multiple light emitting layers of different types is laminated as a common layer extending continuously over the pixels. The light emission separation layer is arranged between two adjacent light emitting layers, and is formed so as to have a different configuration depending on a display color of the pixel.

The present disclosure provides an organic electroluminescent device comprising: a cathode; an anode; an N-type organic semiconductor between the cathode and the anode; and a P-type organic semiconductor between the N-type organic semiconductor and the anode and in contact with the N-type organic semiconductor, wherein the P-type organic semiconductor has a LUMO energy level between a LUMO energy level and a HOMO energy level of the N-type organic semiconductor, and an energy level difference between the LUMO energy level of the N-type organic semiconductor and the LUMO energy level of the P-type organic semiconductor corresponds to an electron transition luminescence spectral range in a wavelength range between near-infrared to ultraviolet.

The present disclosure relates to an organic light-emitting diode which can operate at a low voltage with high efficiency and exhibits the effect of having an alleviated luminance reduction rate in a low dynamic range. More particularly, the organic light-emitting diode comprises: a first electrode; a second electrode facing the first electrode; and a light-emitting layer and a charge balance control layer arranged sequentially between the first and the second electrode, wherein the light-emitting layer includes at least one of amine derivative compounds represented by the following Chemical Formula A and the charge balance control layer includes at least one of anthracene derivative compounds represented by the following Chemical Formula B or C. The structures of Chemical Formulas A, B, and C are as defined in the specification.

An organic light emitting diode (OLED) display is disclosed. The OLED display includes a first stack having a first emission layer and a first layer. The first emission layer emits red light, green light, or blue light. The OLED display includes a second stack having a second emission layer and a second layer. The second stack emits light of a different angular spectral distribution as that emitted by the first stack. Further, a thickness of the second layer is different from a thickness of the first layer such that light emitted by the first emission layer resonates within the first stack at a first degree and light emitted by the second emission layer resonates within the second stack at a second degree, the first degree being greater than the second degree.

A display device includes: a substrate; a transistor that is disposed on the substrate; an auxiliary electrode that is connected with the transistor; a first electrode that is disposed on a same layer as the auxiliary electrode; a light emitting diode layer that is disposed on the first electrode; and a second electrode that is disposed on the light emitting diode layer, wherein the second electrode contacts the auxiliary electrode at a side surface thereof.

A quantum dot light emitting structure and a method for manufacturing the same, an array substrate, and a display device are disclosed. The quantum dot light emitting structure includes a quantum dot light emitting layer, an electrode, and an electron transport layer located between the quantum dot light emitting layer and the electrode; the quantum dot light emitting structure further includes an electron blocking layer located in the electron transport layer.

Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.

The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes a number of N QD structural units arranged sequentially along a radial direction of the QD material, where N≥1. Each QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface of the QD material. Moreover, the energy level widths of adjacent QD structural units are continuous. The present invention provides a QD material having a gradient alloy composition along the radial direction from the center to the surface. The disclosed QD material not only achieves higher QD light-emitting efficiency, but also meets the comprehensive requirements of semiconductor devices and corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.