There is disclosed a compound Formula I

##STR00001##

In Formula I: Z is CR.sup.4R.sup.5, C═CR.sup.4R.sup.5, SiR.sup.4R.sup.5, GeR.sup.4R.sup.5, NR.sup.4a, PR.sup.4a, P(O)R.sup.4a, O, S, SO, SO.sub.2, Se; SeO, SeO.sub.2, Te, TeO, or TeO.sub.2; R.sup.1 - R.sup.3 are the same or different at each occurrence and are D, aryl, heteroaryl, alkyl, amino, silyl, germyl, deuterated aryl, deuterated heteroaryl, deuterated alkyl, deuterated amino, deuterated silyl, or deuterated germyl, where two groups selected from R.sup.1, R.sup.2, and R.sup.3 can be joined together to form a fused ring; R.sup.4 - R.sup.5 are the same or different at each occurrence and are H, D, aryl, heteroaryl, alkyl, amino, silyl, germyl, deuterated aryl, deuterated heteroaryl, deuterated alkyl, deuterated amino, deuterated silyl, or deuterated germyl; R.sup.4a is alkyl, silyl, germyl, aryl, or a deuterated analog thereof; a is an integer from 0-4; b and c are the same or different and are an integer from 0-3.

Provided are a light-emitting device including a heterocyclic compound represented by Formula 1, an electronic apparatus including the light-emitting device, and the heterocyclic compound wherein Formula 1 may be understood by referring to the description of Formula 1 provided herein:

##STR00001##

Provided in the present disclosure are a thermally activated delayed fluorescent material, an organic light-emitting device and a display apparatus. The energy level difference between a singlet energy level and a triplet energy level of the thermally activated delayed fluorescent material is less than 0.3 eV, and a spin-orbit coupling value SOC between a singlet state and a triplet state of the thermally activated delayed fluorescent material is SOC≤0.05 cm.sup.−1.

A light-emitting element includes the following: a cathode; an anode; a light-emitting layer provided between the cathode and the anode; an electron transport layer provided between the cathode and the light-emitting layer; and a potential well provided between the cathode and the light-emitting layer, and being a region having a larger electron affinity than a surrounding region.

The present invention relates to an electron buffering material and an organic electroluminescent device comprising the same in an electron buffer layer. It is possible to provide an organic electroluminescent device having excellent luminous efficiency and lifespan characteristics by using the electron buffering material according to the present invention.

Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.

An organic electroluminescence device of an embodiment includes a first electrode, a second electrode opposite the first electrode, and an emission layer between the first electrode and the second electrode, wherein the emission layer includes a polycyclic compound represented by Formula 1, thereby showing improved emission efficiency. ##STR00001##

A display substrate and a manufacturing method thereof, and a display panel are provided. The display substrate includes a base substrate, a first electrode, a light-emitting functional layer, and a second electrode. The light-emitting functional layer includes a first functional layer and a second functional layer, an orthographic projection of an edge of the second functional layer on the base substrate is within an orthographic projection of an edge of the first functional layer on the base substrate, and an area of an orthographic projection of the second functional layer on the base substrate is smaller than an area of an orthographic projection of the first functional layer on the base substrate; and the second electrode covers and is in contact with at least one side surface of the light-emitting functional layer and a portion of a surface of the light-emitting functional layer away from the base substrate.

A display device comprising: pixel electrodes; an electroluminescent layer composed of layers laminated with each other, the multiple layers including a light-emitting layer and a charge generation layer; and a counter electrode. The multiple layers include a first layer composed of sections separated from each other and overlapping with the pixel electrodes, a second layer in contact with the first layer and continuous over the pixel electrodes, and a third layer interposed between the first layer and the second layer, the third layer being in contact with the first layer and the second layer over an adjacent pair of the sections. At least the charge generation layer is the first layer. The second layer is adapted to inject or transport carriers, either electrons or holes. The third layer is adapted to block the carriers injected or transported by the second layer.

The present application discloses a method for preparing quantum dots light-emitting diode, including the following step: providing a base plate, placing the base plate into an inert atmosphere containing active gas, and printing quantum dots ink on a surface of the base plate to prepare a quantum dots light-emitting layer. The method for preparing the quantum dots light-emitting diode provided in the present application changes the film-forming atmosphere of inkjet printing, and prepares the quantum dots light-emitting layer in the inert atmosphere containing active gas, which can improve the device efficiency of the quantum dots light-emitting diode while ensuring the printability of quantum dots ink.