A light-emitting element includes: a first electrode serving as an anode; a second electrode serving as a cathode; a light-emitting layer, of a first wavelength range, provided between the first electrode and the second electrode; an oxide layer provided between the light-emitting layer of the first wavelength range and the first electrode of the first electrode and the second electrode; and an oxide layer provided between the oxide layer and the second electrode, and having contact with the oxide layer. Either the oxide layer or the oxide layer whichever farther away from the light-emitting layer of the first wavelength range is made of a semiconductor. A density of oxygen atoms in the oxide layer is lower than a density of oxygen atoms in the oxide layer.

A light-emitting device in which an interlayer includes a contact layer including an electron-transporting host and a hole-transporting host is provided. The contact layer is in direct contact with an emission layer, and the emission layer includes a first dopant and a second dopant.

A display device includes a thin film transistor layer, a light-emitting element layer including a plurality of light-emitting elements, each including a first electrode, a function layer, and a second electrode, and each having a different luminescent color. The function layer includes a light-emitting layer and a pair of holding layers sandwiching the light-emitting layer and each including a photosensitive material. One of the first electrode and the second electrode is an anode electrode and the other is a cathode electrode. The function layer includes a hole transport layer provided between the anode electrode and one holding layer of the pair of holding layers, and an electron transport layer provided between the cathode electrode and the other holding layer of the pair of holding layers.

A light emitting device in which: a) an absolute value of a lowest unoccupied molecular orbital (LUMO) energy level of a first electron transporting compound (ET-1) is smaller than an absolute value of a LUMO energy level of a host compound (H-1), b) an absolute value of a LUMO energy level of a second electron transporting compound (ET-2) is smaller than an absolute value of a LUMO energy level of a third electron transporting compound (ET-3), c) and an absolute value of a LUMO energy level of the second electron transporting compound (ET-2) is smaller than an absolute value of a LUMO energy level of the first electron transporting compound (ET-1).

Provided is a display substrate including a base substrate, an anode layer, a light-emitting layer, an electron diffusion layer, a hole block layer and a cathode layer which are sequentially stacked along a direction away from the base substrate, wherein a material of the electron diffusion layer comprises a first luminescent material, and a transport speed of holes generated by the anode layer in the electron diffusion layer is less than a transport speed of the holes in the light-emitting layer.

A novel mixed material for a light-emitting device with improved heat resistance is provided. The mixed material for a light-emitting device includes a first heteroaromatic compound and a second heteroaromatic compound. The first heteroaromatic compound includes a first heteroaromatic ring. The first heteroaromatic ring includes a ring including two or more nitrogen atoms and any one of a benzene ring and a pyridine ring or a ring including a diazine ring or a triazine ring. The second heteroaromatic compound includes a second heteroaromatic ring. The second heteroaromatic ring includes a ring including two or more nitrogen atoms and any one of a benzene ring and a pyridine ring or a ring including a diazine ring or a triazine ring. A structure of the first heteroaromatic ring is different from a structure of the second heteroaromatic ring.

A quantum dot light emitting diode and a method for manufacturing the same are provided, a display panel, and a display device, belonging to the display technical field. The quantum dot light emitting diode comprises: a base substrate; a first electrode, a first electron transport layer, a second electron transport layer, a quantum dot light emitting layer, a hole transport layer, a hole injection layer and a second electrode successively located on the base substrate, where a surface roughness of a side of the first electron transport layer away from the first electrode is less than a threshold, and the second electron transport layer is composed of nanoparticles.

A display panel including a power supplying auxiliary electrode above the substrate in at least one gap among gaps between pixel electrodes in row and column directions, not in contact with the pixel electrodes, extending in the row and/or column direction. An intermediate layer is on or above light-emitting layers and the auxiliary electrode, and includes a fluoride of an alkali metal or an alkaline earth metal. A functional layer is on or above the intermediate layer, and includes an organic material that facilitates electron transport and/or facilitates electron injection and a rare earth metal dopant. A counter electrode is on or above the functional layer. Further, 1≤x≤3, 20≤y≤40, and y≥10x+10, where x is film thickness of the intermediate layer in nanometers, and y is percentage by weight of the rare earth metal dopant in the functional layer.

An organic electroluminescence device includes: an anode; a cathode opposite the anode; and an organic layer interposed between the anode and the cathode, in which the organic layer includes: an emitting layer; and a first electron transporting layer and a second electron transporting layer which are provided on a side of the emitting layer near the cathode. The first electron transporting layer includes a compound represented by a formula (1) below, and the second electron transporting layer includes a compound represented by a formula (2) below.

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The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, an electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron buffer layer between the electron transport layer and the quantum dot light emitting layer; wherein the electron transport layer and the electron buffer layer include a same metal oxide, and an oxygen vacancy concentration in the electron buffer layer is greater than that in the electron transport layer. The embodiment of the present disclosure also provides a manufacturing method for the quantum dot light emitting diode and a display apparatus.