A light-emitting device includes: a first electrode; a second electrode; m emission units between the first electrode and the second electrode; and m−1 charge generation layer(s), each located between two adjacent emission units, and including m−1 n-type charge generation layer(s) and m−1 p-type charge generation layer(s). The m emission units each include a hole transport region, an emission layer, and an electron transport region. A first hole transport region in a first emission unit closest to the first electrode may include a hole transfer layer and a hole injection layer and/or a hole transport layer. The hole transfer layer may be a single layer consisting of an electron-transporting compound including a phosphine oxide group (P═O), a phosphine sulfide group (P═S), a π electron-deficient nitrogen-containing C.sub.1-C.sub.60 cyclic group, or any combination thereof. A highest occupied molecular orbital (HOMO) energy level of the hole transfer layer may be about −6.0 eV to about −5.3 eV.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

The present disclosure provides a quantum dot material comprising a quantum dot body and a hole transport ligand bonded to the quantum dot body through a coordinate bond. The hole transport ligand comprises a carbazolyl group, at least one coordinating group and at least one crosslinking group having an unsaturated bond. Both of the coordinating group and the crosslinking group are terminal groups of the hole transport ligand, and the coordinating group provides the coordinate bond. The present disclosure also provides a method for manufacturing the quantum dot material, a light emitting diode and a display panel.

A semiconductor device comprises a substrate, a first hole-transporting layer over the substrate, a first electron-transporting layer on the first hole-transporting layer, and a second hole-transporting layer over the first electron-transporting layer. At least one of the first electron-transporting layer and the second hole-transporting layer has an organic component. The device is characterized by one of the following: a metal oxide layer present on the first electron-transporting layer, wherein a second electron-transporting layer is on the metal oxide layer, wherein the second hole-transporting layer is on the second electron-transporting layer, or the second hole transporting layer has a first p-doped hole-transporting surface present on the first electron-transporting, layer and a second p-doped hole-transporting surface facing away from the first p-doped hole-transporting surface, or the first electron-transporting layer is on a top surface and on sidewalls of the first hole-transporting layer.

An organometallic compound represented by Formula 1:

M(L.sub.1).sub.n1(L.sub.2).sub.n2  Formula 1 wherein, in Formula 1, M, L.sub.1, L.sub.2, n1, and n2 may be understood by referring to the descriptions of M, L.sub.1, L.sub.2, n1, and n2 respectively as disclosed herein.

The present invention provides with an electron-accepting compound having a structure of the following formula (1): ##STR00001##

Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.

A display device includes a substrate, a plurality of pixels above the substrate, each of the pixels including a light emitting element, a display region including the plurality of pixels, a thin film transistor which each of the plurality of pixels includes, a protective film including a first inorganic insulating material and located between the thin film transistor and the light emitting element, a sealing film including a second inorganic insulating material and covering the light emitting element, and at least one through hole located in the display region and passing through the substrate, the protective film, and the sealing film, wherein the second inorganic insulating material is in direct contact with the protective film in a first region located between the through hole and the pixels.

The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes a number of N QD structural units arranged sequentially along a radial direction of the QD material, where N≥1. Each QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface of the QD material. Moreover, the energy level widths of adjacent QD structural units are continuous. The present invention provides a QD material having a gradient alloy composition along the radial direction from the center to the surface. The disclosed QD material not only achieves higher QD light-emitting efficiency, but also meets the comprehensive requirements of semiconductor devices and corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

A quantum dot device including an anode; a cathode disposed substantially opposite to the anode; a hole injection layer disposed on the anode between the anode and the cathode; a hole transport layer disposed on the hole injection layer between the hole injection layer and the cathode; and a quantum dot layer disposed on the hole transport layer between the hole transport layer and the cathode, wherein the quantum dot layer includes a plurality of quantum dots, wherein the hole transport layer includes a hole transport material and an electron transport material, and wherein a lowest unoccupied molecular orbital (LUMO) energy level of the electron transport material and a lowest unoccupied molecular orbital (LUMO) energy level of the quantum dot layer is about 0.5 electron volts or less.