A photoelectric conversion element includes: a first photoelectric conversion layer including: a bottom electrode; a photoelectric conversion layer; and a top electrode; and a second photoelectric conversion part including: a bottom electrode; a photoelectric conversion part; and a top electrode. A conductive layer is formed on the bottom electrode. The top electrode and the bottom electrode are electrically connected by a conductive portion and the conductive layer. The conductive portion is formed of a part of the top electrode filled in a first groove that makes a surface of the conductive layer exposed and separates a photoelectric conversion layer and a photoelectric conversion layer from each other. The top electrodes are physically separated by a second groove provided to make a step surface of a stepped portion provided in the photoelectric conversion layer exposed and have a bottom surface thereof overlap the surface of the conductive layer.

An inorganic light emitting diode in which at least one energy control layer including an organometallic compound interacting with a hydroxyquinoline moiety is disposed between an emitting material layer and at least one charge transfer layer and an inorganic light emitting device including the diode are disclosed. An exciton recombination zone is formed at the central region in the EML, and inorganic luminescent particles have minimal surface defects by introducing the energy control layer. The inorganic light emitting diode and the inorganic light emitting device can improve their color purity and luminous efficiency.

A light-emitting element includes, in sequence, an anode, a hole transport layer, a luminous layer containing a plurality of quantum dots, an electron transport layer, and a cathode. The electron transport layer includes a plurality of inorganic nanoparticles having electron transportability, and an organic layer having electron transportability. The organic layer partly contains the plurality of inorganic nanoparticles, and includes a plurality of first hollows in an interface adjacent to the luminous layer. The plurality of first hollows are filled with the plurality of quantum dots.

A photoelectric conversion device includes: a substrate; a first photoelectric conversion element including a first substrate electrode, a first active layer and a first counter electrode; a second photoelectric conversion element including a second substrate electrode, a second active layer, and a second counter electrode; and a connection connecting the first counter electrode and the second substrate electrode. The second active layer is represented by a composition formula: A.sub.αBX.sub.χ, where A denotes at least one cation selected from monovalent cations, B denotes at least one cation selected from bivalent cations, and X denotes at least one ion selected from monovalent halogen ions; and the second active layer has a first and a second compound layer, the first compound layer containing a first compound satisfying 0.95≤α, and 2.95≤χ, and the second compound layer containing a second compound satisfying α<0.95, and χ<2.95.

An electroluminescent device and a display device including the same are disclosed, wherein the electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; a light emitting layer including a first light emitting layer disposed on the hole transport layer, the first emitting layer including a first quantum dot, and a second light emitting layer including a second quantum dot and an n-type organic semiconductor, the second light emitting layer disposed on the first light emitting layer; an electron transport layer disposed on the second light emitting layer; and a second electrode disposed on the electron transport layer.

Provided is an intrinsically stretchable organic solar cell, a manufacturing method thereof, and an electronic device comprising the same. The intrinsically stretchable organic solar cell of the present invention is characterized that wherein excellent interfacial bonding among stretchable constituent elements constituting each layer is induced so that the constituent elements are seamlessly integrated into a single system, thereby ensuring excellent initial power conversion efficiency (PCE), and mechanical robustness showing that 70% or more of initial PCE is maintained in spite of repetitive tensile strains. Thus, the organic solar cell is useful for an electronic device applied to any one selected from a group consisting of sensors, electronic skins, flexible displays, and stretchable displays.

Provided in the present disclosure is a photoelectric device. For the photoelectric device, a modification layer is added on the surface of a first electrode layer on the side away from a base substrate. The presence of the modification layer can prevent the direct contact of the first electrode layer and other film layers, thereby alleviating the problem of corrosion of indium-containing oxide which constitutes the first electrode layer. Furthermore, an indium-ion trapping group contained in the modification layer can fix indium ions released after the corrosion of the indium-containing oxide to the surface of the first electrode layer, thereby preventing the indium ions from moving to the inner part of the photoelectric device, which can then increase the service life of the photoelectric device.

The present invention relates to a perovskite optoelectronic device and a manufacturing method therefor. The present invention allows manufacture of a perovskite optoelectronic device with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and may also be applied to a flexible device.

A monolithic solar cell includes a first solar cell that is a sequential stack of an electrode, a silicon substrate, and an n-type emitter layer; a recombination layer disposed on the n-type emitter layer; an interfacial layer that is a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, and that is disposed on the recombination layer; and a second solar cell that includes a p-type hole selective layer and a perovskite layer disposed on the p-type hole selective layer, the a p-type hole selective layer contacting and being integrated onto the interfacial layer of the first solar cell in a heat treatment during which the interfacial layer is partially decomposed, wherein the presence of the interfacial layer prevents a reduction in photoelectric conversion efficiency that occurs if the first solar cell and the second solar cell are combined without the presence of the interfacial layer.

A top-emitting pixel device is disclosed. The pixel device may include a reflective bottom electrode disposed over a substrate, a first charge transport layer disposed over the reflective bottom electrode, an emissive layer disposed over the first charge transport layer, and a second charge transport layer disposed over the emissive layer. Further, the pixel device may include a patterned transparent polymer electrode disposed over the second charge transport layer and extending laterally to cover an emissive area of the top-emitting pixel device, and a patterned auxiliary electrode disposed at least partially over the patterned transparent polymer electrode outside of the emissive area of the top-emitting pixel device to make direct electrical contact with the patterned transparent polymer electrode.