A thermoelectric fabric may include a plurality of first threads and second threads. The first threads may be alternately formed by p-doped and n-doped thread portions and electrically conductive first thread portions and second thread portions arranged in between. The first thread portions may form a hot side of the fabric, and the second thread portions may form a cold side. The first threads may form one of warp threads or weft threads of the fabric, and the second threads may form the other of the warp threads or weft threads. On at least one of the first thread portions of at least one of the plurality of first threads, a temperature control structure with at least one temperature control element for cooling the hot side may be present.

Proposed are an organic-inorganic composite thermoelectric material and a preparation method thereof. The organic-inorganic composite thermoelectric material includes an organic matrix and an inorganic thermoelectric portion dispersed in the organic matrix and including a nanomaterial. The organic matrix includes an organic conductor, and the nanomaterial includes at least one selected from the group consisting of a chalcogen element and a chalcogenide. The organic-inorganic composite thermoelectric material of the present invention has advantages of low cost and excellent thermoelectric properties through complexation of an aligned inorganic thermoelectric material and an organic thermoelectric material.

The disclosure is related to structures and method of making thermoelectric devices. The structures include an electrically and thermally nonconductive substrate with cylindrical or frustum-shaped tunnels. The tunnels may be filled with thermally and electrically conductive materials that resist diffusion. The structures include n-type and p-type materials, in homogeneous form or alternating with interlayers to block phonon conduction between layers of thermoelectric materials. The tunnels are individually associated with either n-type or p-type thermoelectric materials and connected in pairs to form alternating conductors on both sides of the substrate. The structures may also be coated with layers of gold and nickel and have thermoelectric materials deposited in the tunnels. The tunnels may be partially or fully capped with sintered nano-silver or solder. Notches may alternate sides to electrically isolate each side of the structure to provide current flow between the p-type and n-type thermoelectric layers.

A thermoelectric element according to one embodiment of the present disclosure includes a first substrate, a first resin layer disposed on the first substrate, a first electrode disposed on the first resin layer, a P-type thermoelectric leg and an N-type thermoelectric leg disposed on the first electrode, a second electrode disposed on the P-type thermoelectric leg and the N-type thermoelectric leg, a second resin layer disposed on the second electrode, and a second substrate disposed on the second resin layer, wherein at least one of the first electrode and the second electrode includes a copper layer, first plated layers disposed on both surfaces of the copper layer, and second plated layers disposed between both surfaces of the copper layer and the first plated layers, materials of the first plated layer and the second plated layer are different from each other, and the first plated layer has a melting point greater than or equal to 300° C., and an electrical conductivity greater than or equal to 9×10.sup.6 S/m.

One embodiment discloses a thermoelectric element comprising: a first substrate; a plurality of thermoelectric legs disposed on the first substrate; a second substrate disposed on the plurality of thermoelectric legs above the first substrate; electrodes including a plurality of first electrodes disposed between the first substrate and the plurality of thermoelectric legs and a plurality of second electrodes disposed between the second substrate and the plurality of thermoelectric legs; and a first reinforcing part disposed on the lower surface and a portion of the side surface of the first substrate.

This disclosure relates to an integrated thermoelectric cooler and methods for forming thereof. The integrated thermoelectric cooler can include a plurality of thermoelectric rods located between the detector substrate and a system interposer. The detector substrate and the system interposer can directly contact ends of the thermoelectric rods. The integrated thermoelectric cooler can be formed by forming the plurality of thermoelectric rods on reels, for example, and the plurality of thermoelectric rods can be thinned down to a certain height. The thermoelectric rods can be transferred and bonded to the system substrate. An overmold can be formed around the plurality of thermoelectric rods. The height of the overmold and thermoelectric rods can be thinned down to another height. The thermoelectric rods can be bonded to the detector substrate. In some examples, the overmold can be removed.

An apparatus and method perform supersonic cold-spraying to deposit N and P-type thermoelectric semiconductor, and other polycrystalline materials on other materials of varying complex shapes. The process developed has been demonstrated for bismuth and antimony telluride formulations as well as Tetrahedrite type copper sulfosalt materials. Both thick and thin layer thermoelectric semiconductor material is deposited over small or large areas to flat and highly complex shaped surfaces and will therefore help create a far greater application set for thermoelectric generator (TEG) systems. This process when combined with other manufacturing processes allows the total additive manufacturing of complete thermoelectric generator based waste heat recovery systems. The processes also directly apply to both thermoelectric cooler (TEC) systems, thermopile devices, and other polycrystalline functional material applications.

A thermoelectric material element includes: a thermoelectric material portion composed of a thermoelectric material that includes a first crystal phase and a second crystal phase during an operation, the second crystal phase being different from the first crystal phase; a first electrode disposed in contact with the thermoelectric material portion; and a second electrode disposed in contact with the thermoelectric material portion and disposed to be separated from the first electrode. During the operation, the thermoelectric material portion includes a first temperature region having a first temperature, and a second temperature region having a second temperature lower than the first temperature of the first temperature region. A ratio of the first crystal phase to the second crystal phase in the first temperature region is larger than a ratio of the first crystal phase to the second crystal phase in the second temperature region.

A semiconductor structure includes, an optical component and a thermal control mechanism. The optical component includes a first main path that splits into a first side path and a second side path so that the first side path and the second side path are separated from one another. The thermal control mechanism configured to control a temperature of both the first side path and the second side path, wherein the first thermal control mechanism includes a first thermoelectric member and a second thermoelectric member that are positioned between the first side path and the second side path and the first thermoelectric member and the second thermoelectric member have opposite conductive types.

An optical fiber has an optical fiber core for high-power laser transmission, an optical cladding surrounding the optical fiber core, and at least one harvesting cell disposed around the optical cladding, where the harvesting cell includes an anode, a thermoelectric layer disposed adjacent to and electrically connected to the anode, and a cathode disposed adjacent to and electrically connected to the thermoelectric layer, and where the thermoelectric layer includes a polymer-based thermoelectric material.