Provided is a thermoelectric conversion module including a thermoelectric conversion material layer that has high thermoelectric performance, the thermoelectric conversion material layer containing a thermoelectric conversion material with its electrical resistivity reduced. The thermoelectric conversion module includes the thermoelectric conversion material layer including the thermoelectric conversion material containing at least thermoelectric semiconductor particles. The thermoelectric conversion material layer has voids, and when a proportion of the area occupied by the thermoelectric conversion material within the area of a longitudinal cross-section that includes the center portion of the thermoelectric conversion material layer is defined as a filling ratio, the filling ratio is greater than 0.900 and less than 1.000.

Provided is a thermoelectric conversion module including a thermoelectric conversion material layer that has high thermoelectric performance, the thermoelectric conversion material layer containing a thermoelectric conversion material with its electrical resistivity reduced. The thermoelectric conversion module includes the thermoelectric conversion material layer including the thermoelectric conversion material containing at least thermoelectric semiconductor particles. The thermoelectric conversion material layer has voids, and when a proportion of the area occupied by the thermoelectric conversion material within the area of a longitudinal cross-section that includes the center portion of the thermoelectric conversion material layer is defined as a filling ratio, the filling ratio is greater than 0.900 and less than 1.000.

To provide a Peltier cooling element that is excellent in thermoelectric performance and flexibility and can be manufactured easily at low cost. A Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, and a method for manufacturing a Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, the method containing: coating a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, on a support, and drying, so as to form a thin film; and subjecting the thin film to an annealing treatment.

The present application discloses a thermoelectric material, which contains CsAg.sub.5Te.sub.3 crystal material. At 700K, the thermoelectric material has an optimum dimensionless figure-of-merit Z1 as high as 1.6 and a high stability, and the thermoelectric material can be recycled. The present application also discloses a method for preparing the CsAg.sub.5Te.sub.3 crystal material. The CsAg.sub.5Te.sub.3 crystal material is one-step synthesized by a high-temperature solid-state method, using a raw material containing Cs, Ag and Te, so that the high-purity product is obtained while the synthesis time is greatly shortened.

A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains.

Provided is a thermoelectric material satisfying (MX).sub.1+a(TX.sub.2).sub.n and having a superlattice structure, wherein M is at least one element selected from the group consisting of Group 13, Group 14, and Group 15, T is at least one element selected from Group 5, X is a chalcogenide element, a is a real number satisfying 0<a<1, and n is a natural number of 1 to 3.

A thermoelectric conversion module including, a first substrate having a first electrode, a second substrate having a second electrode, a chip of a thermoelectric conversion material made from a thermoelectric semiconductor composition, a first bonding material layer made from a first bonding material and bonding one surface of the chip of the thermoelectric conversion material and the first electrode, and a second bonding material layer made from a second bonding material and bonding another surface of the chip of the thermoelectric conversion material and the second electrode. A melting point of the second bonding material is lower than a melting point of the first bonding material, or the melting point of the second bonding material is lower than a curing temperature of the first bonding material.

A heat conversion device according to an embodiment of the present invention comprises: a frame comprising multiple unit modules arranged in a first direction and in a second direction intersecting with the first direction, respectively, and a first cooling water inflow tube and a first cooling water discharge tube formed along the first direction so as to support the multiple unit modules; multiple second cooling water inflow tubes connected to the first cooling water inflow tube and arranged on one side of the multiple unit modules along the second direction; and multiple second cooling water discharge tubes connected to the first cooling water discharge tube and arranged on the other side of the multiple unit modules along the second direction. Each unit module comprises a cooling water passage chamber, a first thermoelectric module arranged on a first surface of the cooling water passage chamber, and a second thermoelectric module arranged on a second surface of the cooling water passage chamber. A cooling water inflow port is formed on a third surface between the first and second surfaces of the cooling water passage chamber. A cooling water discharge port is formed on a fourth surface between the first and second surface of the cooling water passage chamber. The cooling water inflow port is connected to the second cooling water inflow tubes, and the cooling water discharge port is connected to the second cooling water discharge tubes.

The present disclosure relates to an extrusion nozzle apparatus and a method for extruding a thermoelectric material using the extrusion nozzle apparatus. An extrusion nozzle apparatus according to one embodiment of the present disclosure comprises: an inlet introducing material; an outlet discharging the input material; and a discharge pipe formed in a multi-stage shape including a plurality of stages, wherein the input material is pressurized inside the discharge pipe and moves in a first direction from the inlet toward the outlet. The cross-sectional area of the plurality of stages in a direction perpendicular to the first direction progressively decreases from the inlet to the outlet. Accordingly, the thermoelectric performance of a thermoelectric material may be improved, and production cost and production time may be reduced.

Micro-scale thermoelectric devices having high thermal resistance and efficiency for use in cooling and energy harvesting applications and relating fabricating methods are disclosed. The thermoelectric devices include first substrates substantially parallel with second substrates. Scaffold members are deposited between the first and second substrate. The scaffold members include a plurality of cavities having sidewalls. The scaffold members may be formed from the second substrate. The sidewalls are substantially vertical with respect to the second substrate. The sidewalls may be substantially parallel. Thermoelectric materials are deposited on the sidewalls.