Methods and processes to fabricate thermoelectric materials and more particularly to methods and processes to fabricate nano-sized doped silicon-based semiconductive materials to use as thermoelectrics in the production of electricity from recovered waste heat. Substantially oxidant-free and doped silicon particulates are fractured and sintered to form a porous nano-sized silicon-based thermoelectric material.

Provided is a thermoelectric element assembly including a soft support including a plurality of through-holes, and a plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements inserted into a plurality of through-holes of the support, wherein a thickness of the support is less than a length of the thermoelectric element.

A thermoelectric conversion element that can efficiently make a temperature difference across a thermoelectric conversion material is provided. In the thermoelectric conversion element, on a first surface of a thermoelectric conversion module comprising a P-type thermoelectric element, an N-type thermoelectric element, and an electrode, a thermally conductive resin layer A and a thermally conductive resin layer B having a lower thermal conductivity than the thermally conductive resin layer A are provided in an alternating manner so as to be in direct contact with the first surface, and on a second surface on the opposite side of the first surface of the thermoelectric conversion module, a thermally conductive resin layer a and a thermally conductive resin layer b having a lower thermal conductivity than the thermally conductive resin layer a are provided in an alternating manner so as to be in direct contact with the second surface.

An apparatus and methods to make a product using supersonic cold-spray deposition of brittle functional materials in fine and micro features down to 10 μm in minimum dimension. The process may use semiconductors such as bismuth and antimony telluride formulations, and hard magnetic materials such as neodymium iron boride and strontium ferrite, and soft magnetic materials such as manganese zinc ferrite, and manganese ferrite materials. In addition, the methods and processes have been demonstrated for materials as soft as graphite and as hard as boron carbide. Micro components have been deposited in square, tapered and elongated shaped features with feature sizes as small as 10 μm in minimum dimensions and applied to flat and highly complex shaped surfaces. This process when combined with other cold spray manufacturing processes allows the total additive manufacturing of complete electronic, magnetic and other complex devices including multiple type of brittle functional materials.

Provided is a thermoelectric element assembly including a soft support including a plurality of through-holes, and a plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements inserted into a plurality of through-holes of the support, wherein a thickness of the support is less than a length of the thermoelectric element.

A chalcogen-containing compound of the following Chemical Formula 1, which may have decreased thermal conductivity and improved power factor in the low temperature region, and thus exhibit an excellent thermoelectric figure of merit, a method for preparing the same, and a thermoelectric element including the same:
V.sub.1Sn.sub.a−xIn.sub.xSb.sub.2Te.sub.a+3  [Chemical Formula 1]
wherein V, a and x are as defined in the specification.

Embodiments relate to methods of manufacturing and operating nano-scale energy converters and electric power generators. The nano-scale energy converters include two electrodes separated a predetermined distance. The first electrode is manufactured to have a first work function value. The second electrode is manufactured to have a second work function value different from the first work function value. A cavity is formed between the first and second electrodes, and a nanofluid is disposed in the cavity. The nanofluid includes a plurality of nanoparticles, with the nanoparticles having a third work function value that is greater than the first and second work function values. The relationship of the work function values of the nanoparticles to the work function values of the electrodes optimizes transfer of electrons to the nanoparticles through Brownian motion and electron hopping.

Flexible and foldable paper-substrate thermoelectric generators (TEGs) and methods for making the paper-substrate TEGs are disclosed. A method includes depositing a plurality of thermocouples in series on a paper substrate to create a paper-substrate TEG, wherein the plurality of thermocouples is deposited between two contact points of the paper-substrate TEG. The method may also include setting the power density and maximum achievable temperature gradient of the paper-substrate TEG by folding the paper-substrate TEG. A paper-substrate TEG apparatus may include a paper substrate and a plurality of thermocouples deposited in series on the paper substrate between two contact points of the paper-substrate TEG, wherein the power density and maximum achievable temperature gradient of the paper-substrate TEG is set by folding the paper-substrate TEG.

A thermoelectric device includes each an n-type thermoelectric leg and a p-type thermoelectric leg electrically coupled by an electrical contact. At least one of the n-type and p-type thermoelectric legs contains a particulate semiconductor mixed with hollow microspheres. The hollow microspheres may make up between 40% and 90% by volume of the thermoelectric leg. Adjacent thermoelectric couples may be electrically coupled by a second electrical contact. The thermoelectric legs may be printed by deposition of an ink.

A method for obtaining copper arsenic chalcogen derived nanoparticles, including selecting a first precursor material from the group comprising copper, arsenic, antimony, bismuth, and mixtures thereof, selecting a second material from the group comprising sulfur, selenium, tellurium, and mixtures thereof, and then reacting both precursors in a solvent medium at conditions conducive to the formation of copper arsenic chalcogen derived nanoparticles.