The present description includes a flexible sensor including a flexible substrate, a thermoelectric substrate formed on the flexible substrate, a first metal electrode that is formed on the flexible substrate and is connected to one end of the thermoelectric body, and a second metal electrode that is formed on the flexible substrate and is connected to another end of the thermoelectric body but spaced apart from the first metal electrode. The flexible sensor simply measures the temperature and the flow velocity with high accuracy. The change in temperature and flow velocity may be measured in real time. In addition, the flexible sensor may measure the temperature and the flow velocity of a fluid even when attached to a curved surface, and self-development is possible by the measurement.

A thermoelectric material may be composed of an isostructural pair of Heusler compounds, either a pair of full Heusler (FH) X.sub.2YZ compounds or a pair of half Heusler (HH) XYZ compounds. In the FH pair, a first compound of the pair may the formula (X1).sub.2Y1Z1, wherein X1 is selected from Fe and Co; Y1 is selected from Ti, V, Nb, Hf, and Ta; and Z1 is selected from Al, Ga, Si, and Sn and a second compound of the pair has the formula (X2).sub.2Y2Z2, wherein X2 is selected from Mn, Fe, Co, Ru, and Rh; Y2 is selected from Ti, V, Mn, Zr, Nb, Hf, and Ta; and Z2 is selected from Be, Al, Ga, Si, Ge and Sn. The first and second compounds of the pair may share two elements in common and have third elements which are different and are either isovalent or have a valency which differs by ±1. In the HH pair, a first compound of the pair may have the formula X1Y1Z1 wherein X1 is selected from Ni and Fe; Y1 is selected from Ti, V, and Nb; and Z1 is selected from Sn and Sb and a second compound of the pair has the formula X2Y2Z2 wherein X2 is selected from Fe, Ru and Pt; Y2 is selected from Ti, V, and Nb; and Z2 is selected from Sn and Sb. The first and second compounds of the pair may share two elements in common and have third elements which are different and are either isovalent or have a valency which differs by ±1. The thermoelectric material at room temperature may have a nanostructured two-phase form having a matrix phase composed of the first compound of the FH pair or the first compound of the HH pair and a nanostructured phase composed of the second compound of the FH pair or the second compound of the HH pair, respectively.

A thermoelectric conversion material has a composition represented by the chemical formula Li.sub.3-aBi.sub.1-bSn.sub.b, in which the range of values a and b is: 0≤a<0.0003, and −a+0.0003≤b≤0.016; or 0.0003≤a≤0.085, and 0<b≤exp[−0.079×(ln(a)).sup.2−1.43×ln(a)−10.5], and in which the thermoelectric conversion material has a BiF.sub.3-type crystal structure and has a p-type polarity.

A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

Integrated circuit devices which include a thermoelectric generator which recycles heat generated by operation of an integrated circuit, into electrical energy that is then used to help support the power requirements of that integrated circuit. Roughly described, the device includes an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a primary power source, and a thermoelectric generator structure disposed in sufficient thermal communication with the integrated circuit die so as to derive, from heat generated by the die, a voltage difference across first and second terminals of the thermoelectric generator structure. A powering structure is arranged to help power the integrated circuit, from the voltage difference across the first and second terminals of the thermoelectric generator. The thermoelectric generator can include IC packaging material that is made from thermoelectric semiconductor materials.

A thermoelectric device of the present invention comprises a first substrate; first electrodes; a P-type thermoelectric leg; an N-type thermoelectric leg and an insulating leg; a second electrode; and a second substrate. The first and second electrodes comprises a plurality of electrodes, the insulating leg comprises a third plating layer, an insulating layer comprising a polymer resin, and a fourth plating layer. The modulus of elasticity of the insulating leg is 3 to 1000 MPa.

A thermoelectric material which minimize the content of components that degrade thermoelectric performance and thus can be usefully used in thermoelectric devices including the same.

A thermoelectric material which minimize the content of components that degrade thermoelectric performance and thus can be usefully used in thermoelectric devices including the same.

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.