A thermoelectric device is disclosed. The thermoelectric device comprises: a body part comprising a hollow in which a semiconductor device is disposed; a plurality of connecting parts protruding on the lateral sides of the body part and comprising connecting holes; and a plurality of electrode parts connected to the semiconductor device and extending to the connecting holes of the connecting parts.

The present invention provides a thermoelectric material excellent in heat resistance with less degradation of thermoelectric characteristics even in a high temperature environment. The thermoelectric material comprises a compound represented by a chemical formula Mg.sub.2Si.sub.1−xSn.sub.x(0<x<1) wherein at least one of the Si site and the Sn site of the compound is replaced with at least one of Sb and Bi, and an added Fe.

A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

A novel compound semiconductor that can be used for a solar battery, a thermoelectric material, and the like, and use thereof. The novel compound semiconductor may be represented by the following Chemical Formula: Nd.sub.xS.sub.yCo.sub.4Sb.sub.12-zQ.sub.z, wherein Q is one or more selected from the O, Se, or Te, 0<x<0.2, 0<y≤1, and 0<z<12.

A ZrCoBi-based p-type half-Heusler material can have a formula: ZrCoBi.sub.1-x-ySn.sub.xSb.sub.y, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.2. An average dimensionless figure-of-merit (ZT) for the material can be greater than or equal to about 0.80 as calculated by an integration method for temperatures between 300 and 973 K. A ZrCoBi-based n-type half-Heusler material can have a formula: ZrCo.sub.1-xNi.sub.xBi.sub.1-ySb.sub.y, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.3. The material has an average dimensionless figure-of-merit (ZT) is greater than or equal to about 0.65 as calculated by an integration method for temperatures between 300 and 973 K.

Systems and methods discussed herein relate to Zintl-type thermoelectric materials, including a p-type thermoelectric material according to the formula AM.sub.yX.sub.y, and includes at least one of calcium (Ca), europium (Eu), ytterbium (Yb), and strontium N (Sr), and has a ZT of the above about 0.60 above 675 K. The n-type thermoelectric component includes magnesium (Mg), tellurium (Te), antimony (Sb), and bismuth (Bi) according to the formula Mg.sub.3.2Sb.sub.1.5Bi.sub.0.5-xTe.sub.x that has an average ZT above 0.8 from 400 K to 800 K. The p-type and n-type materials discussed herein may be used alone, in combination with other materials, or in combination with each other in various configurations.

A catheter has a cooling distal section for freezing tissue to sub-zero temperatures with one or more miniature reverse thermoelectric or Peltier elements, also referred to herein as micro-Peltier cooling (MPC) units or electrodes. The MPC units may be on outer surface of an inflatable or balloon member or a tip electrode shell wall that has a fluid-containing interior cavity acting as a heat sink. Each MPC unit has a hot junction and a cold junction whose temperatures are regulated by the heat sink, and a voltage/current applied to the MPC units. A temperature differential of about 70 degrees Celsius may be achieved between the hot and cold junctions for extreme cooling, especially where the MPC units include semiconductor materials with high Peltier co-efficients. An outer coating of thermally-conductive but electrically-insulative material seals the MPC units to prevent unintended current paths through the MPC units.

A thermoelectric conversion element includes a thermoelectric member that is columnar and an insulator formed around the thermoelectric member. Particles are enclosed between the thermoelectric member and the insulator.

A novel compound semiconductor which can be used for a solar cell, a thermoelectric material, or the like, and the use thereof.

A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: M.sub.yV.sub.1-ySn.sub.xSb.sub.2Te.sub.x+3, wherein V is vacancy, M is at least one alkali metal, x≥6, and 0<y≤0.4.