A thermoelectric conversion material includes a sintered body including a main phase including a plurality of crystal grains including Ce, Mn, Fe, and Sb and forming a skuttterudite structure, and a grain boundary between crystal grains adjacent to each other. The grain boundary includes a sintering aid phase including at least Mn, Sb, and O. Thus, with respect to a skutterudite-type thermoelectric conversion material including Sb, which is a sintering-resistant material, it is possible to improve sinterability while maintaining a practical dimensionless figure-of-merit ZT, and to reduce processing cost.

A structure and method for cooling a three-dimensional integrated circuit (3DIC) are provided. A cooling element is configured for thermal connection to the 3DIC. The cooling element includes a plurality of individually controllable cooling modules disposed at a first plurality of locations relative to the 3DIC. Each of the cooling modules includes a cold pole and a heat sink. The cold pole is configured to absorb heat from the 3DIC. The heat sink is configured to dissipate the heat absorbed by the cold pole and is coupled to the cold pole via an N-type semiconductor element and via a P-type semiconductor element. A temperature sensing element includes a plurality of thermal monitoring elements disposed at a second plurality of locations relative to the 3DIC for measuring temperatures at the second plurality of locations. The measured temperatures control the plurality of cooling modules.

Micro-scale thermoelectric devices having high thermal resistance and efficiency for use in cooling and energy harvesting applications and relating fabricating methods are disclosed. The thermoelectric devices include first substrates substantially parallel with second substrates. Scaffold members are deposited between the first and second substrate. The scaffold members include a plurality of cavities having sidewalls. The scaffold members may be formed from the second substrate. The sidewalls are substantially vertical with respect to the second substrate. The sidewalls may be substantially parallel. Thermoelectric materials are deposited on the sidewalls.

A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability even at a low temperature, particularly at a temperature corresponding to an operating temperature of a thermoelectric element, and also exhibits a significantly superior power factor and thermoelectric performance index due to its excellent electrical conductivity and low thermal conductivity caused by its unique crystal lattice structure, a method for preparing the same, and a thermoelectric element including the same. [Chemical Formula 1]—V.sub.1-2xSn.sub.4Bi.sub.2-xAg.sub.3xSe.sub.7, wherein V is vacancy and 0<x<0.5.

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.

A thermoelectric conversion material has a composition represented by the chemical formula Li.sub.3-aBi.sub.1-bSi.sub.b, in which the range of values a and bis: 0≤a≤0.0001, and −a+0.0003≤b≤0.023; 0.0001≤a<0.0003, and −a+0.0003≤b≤exp[−0.046×(In(a)).sup.2−1.03×In(a)−9.51]; or 0.0003≤a≤0.085, and 0<b≤exp[−0.046×(In(a)).sup.2−1.03×In(a)−9.51], and in which the thermoelectric conversion material has a BiF.sub.3-type crystal structure and has a p-type polarity.

A heating and/or cooling device having one or more thermoelectric threads. The thermoelectric thread includes a plurality of individual thermoelectric elements, each thermoelectric element having a first side and a second side. A set of first side electrodes connects at least some of the thermoelectric elements at the first side, and a set of second side electrodes connects at least some of the thermoelectric elements at the second side. An electrically insulative covering at least partially surrounds the plurality of individual thermoelectric elements. The electrically insulative covering is configured to be woven into or otherwise integrated with a fabric.

A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

A composite including: at least one selected from a silicon oxide of the formula SiO.sub.2 and a silicon oxide of the formula SiO.sub.x wherein 0<x<2; and graphene, wherein the silicon oxide is disposed in a graphene matrix.

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.