Composite nanoparticle compositions and associated nanoparticle assemblies exhibit enhancements to one or more thermoelectric properties including increases in electrical conductivity and/or Seebeck coefficient and/or decreases in thermal conductivity. A composite nanoparticle composition comprises a semiconductor nanoparticle including a front face and a back face and sidewalls extending between the front and back faces. Metallic nanoparticles are bonded to at least one of the sidewalls establishing a metal-semiconductor junction.

Systems and methods discussed herein relate to Zintl-type thermoelectric materials, including a p-type thermoelectric material according to the formula AM.sub.yX.sub.y, and includes at least one of calcium (Ca), europium (Eu), ytterbium (Yb), and strontium (Sr), and has a ZT of the above about 0.60 above 675K. The n-type thermoelectric component includes magnesium (Mg), tellurium (Te), antimony (Sb), and bismuth (Bi) according to the formula Mg.sub.3.2Sb.sub.1.3Bi.sub.0.5-xTe.sub.x that has an average ZT above 0.8 from 400K to 800K. The p-type and n-type materials discussed herein may be used alone, in combination with other materials, or in combination with each other in various configurations.

Systems and methods discussed herein relate to Zintl-type thermoelectric materials, including a p-type thermoelectric material according to the formula AM.sub.yX.sub.y, and includes at least one of calcium (Ca), europium (Eu), ytterbium (Yb), and strontium (Sr), and has a ZT of the above about 0.60 above 675K. The n-type thermoelectric component includes magnesium (Mg), tellurium (Te), antimony (Sb), and bismuth (Bi) according to the formula Mg.sub.3.2Sb.sub.1.3Bi.sub.0.5-xTe.sub.x that has an average ZT above 0.8 from 400K to 800K. The p-type and n-type materials discussed herein may be used alone, in combination with other materials, or in combination with each other in various configurations.

This thermoelectric conversion module is formed by electrically connecting, by a conductive member, one end of an n-type thermoelectric conversion element having a negative Seebeck coefficient and having a half-Heusler structure to one end of a p-type thermoelectric conversion element containing an oxide having a positive Seebeck coefficient at a temperature of 25° C. or higher. The conductive member is connected to the n-type thermoelectric conversion element and the p-type thermoelectric conversion element through a connection layer containing a conductive metal comprising silver, and the connection layer is characterized by further containing an oxide to reduce the bond resistance between the n-type thermoelectric conversion element and/or the p-type thermoelectric conversion element.

This thermoelectric conversion module is formed by electrically connecting, by a conductive member, one end of an n-type thermoelectric conversion element having a negative Seebeck coefficient and having a half-Heusler structure to one end of a p-type thermoelectric conversion element containing an oxide having a positive Seebeck coefficient at a temperature of 25° C. or higher. The conductive member is connected to the n-type thermoelectric conversion element and the p-type thermoelectric conversion element through a connection layer containing a conductive metal comprising silver, and the connection layer is characterized by further containing an oxide to reduce the bond resistance between the n-type thermoelectric conversion element and/or the p-type thermoelectric conversion element.

An n-type thermoelectric conversion material expressed in a chemical formula X.sub.3-xX′.sub.xT.sub.3-yCu.sub.ySb.sub.4 (0≦x<3, 0≦y<3.0, and x+y>0), the X includes one or more element(s) of Zr and Hf, the X′ includes one or more element(s) of Nb and Ta, and the T includes one or more element(s) selected from Ni, Pd, and Pt, while including at least Ni, the n-type thermoelectric conversion material expressed in the chemical formula X.sub.3-xX′.sub.xT.sub.3-yCu.sub.ySb.sub.4 has symmetry of a cubic crystal belonging to a space group I-43d.

The present invention relates to a method for manufacturing a thermoelectric module which utilises the concept of solid-liquid interdiffusion bonding for both forming the metallization, interconnection and bonding between the thermoelectric elements and the electric contacts and the forming of a hermetically sealing of the thermoelectric module.

A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains.

The present disclosure relates to a photoelectric conversion apparatus. The photoelectric conversion apparatus includes a carbon nanotube layer, a first thermoelectric conversion layer, a second thermoelectric conversion layer, a first electrode and a second electrode. The carbon nanotube layer includes a plurality of carbon nanotubes. An areal density of the carbon nanotube layer is in a range from about 0.16 g/m.sup.2 to about 0.32 g/m.sup.2.

A thermoelectric conversion material made of a polycrystalline material represented by a composition formula (1) shown below and having an MgAgAs type crystal structure is provided. An insulating coat is provided on at least one surface of the polycrystalline material. Composition formula (1): (A.sub.a1Ti.sub.b1).sub.xD.sub.yX.sub.100-x-y, wherein 0.2≦a1≦0.7, 0.3≦b1≦0.8, a1+b1=1, 30≦x≦35, 30≦y≦35 hold, wherein A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb.