A thermoelectric conversion material has a composition represented by the chemical formula Li.sub.3-aBi.sub.1-bGe.sub.b, in which the range of values a and b is: 0≤a≤0.0003, and −a+0.0003≤b≤0.108; 0.0003≤a≤0.003, and 0≤b≤0.108; or 0.003≤a≤0.085, and 0≤b≤exp[−0.157×(ln(a)).sup.2−2.22×ln(a)−9.81], and in which the thermoelectric conversion material has a BiF.sub.3-type crystal structure and has a p-type polarity.

A thermoelectric conversion material has a composition represented by the chemical formula Li.sub.3-aBi.sub.1-bSi.sub.b, in which the range of values a and b is: 0≤a≤0.0001, and −a+0.0003≤b≤0.023; 0.0001≤a<0.0003, and −a+0.0003≤b≤exp[−0.046×(ln(a)).sup.2−1.03×ln(a)−9.51]; or 0.0003≤a≤0.085, and 0<b≤exp[−0.046×(ln(a)).sup.2−1.03×ln(a)−9.51], and in which the thermoelectric conversion material has a BiF.sub.3-type crystal structure and has a p-type polarity.

A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises magnesium silicide or an alloy containing magnesium silicide, and the average grain size of the crystal grains constituting the polycrystalline body is 1 μm or less, and the electrical conductivity is 10,000 S/m or higher.

A ZrCoBi-based p-type half-Heusler material can have a formula: ZrCoBi.sub.1-x-ySn.sub.xSb.sub.y, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.2. An average dimensionless figure-of-merit (ZT) for the material can be greater than or equal to about 0.80 as calculated by an integration method for temperatures between 300 and 973 K. A ZrCoBi-based n-type half-Heusler material can have a formula: ZrCo.sub.1-xNi.sub.xBi.sub.1-ySb.sub.y, where x can vary between 0.01 and 0.25, and y can vary between 0 and 0.3. The material has an average dimensionless figure-of-merit (ZT) is greater than or equal to about 0.65 as calculated by an integration method for temperatures between 300 and 973 K.

A thermoelectric conversion material includes a sintered body including a main phase including a plurality of crystal grains including Ce, Mn, Fe, and Sb and forming a skutterudite structure, and a grain boundary between crystal grains adjacent to each other. The grain boundary includes a sintering aid phase including at least Mn, Sb, and O. Thus, with respect to a skutterudite-type thermoelectric conversion material including Sb, which is a sintering-resistant material, it is possible to improve sinterability while maintaining a practical dimensionless figure-of-merit ZT, and to reduce processing cost.

Provided by the present invention is a magnesium-antimony-based (Mg—Sb-based) thermoelement, a preparation method and application thereof. The Mg—Sb-based thermoelement comprises: a substrate layer of a Mg—Sb-based thermoelectric material positioned in the center of the thermoelement, transitional layers that are attached to the two surfaces of the substrate layer, and two electrode layer that are respectively attached to the surfaces of the two transitional layers; the transitional layers are made of a magnesium-copper alloy and/or magnesium-aluminum alloy, and the electrode layer is made of copper. The transitional layer and the electrode layer which are developed in the present invention and which are suitable for a Mg—Sb-based thermoelectric material have great significance and prospects in application. The electrode layer enable the Mg—Sb-based thermoelectric material to have an opportunity to enter the market and realize commercialization. Compared with the existing bismuth telluride thermoelectric devices in the market, the thermoelectric device prepared has lower costs, may simultaneously save the rare element tellurium, and is beneficial in saving energy and protecting the environmental.

Disclosed is a technology of permanently phase-transiting a semimetal using ion implantation. More particularly, the permanent phase transition of a dirac semimetal into a weyl semimetal can be induced by implanting non-magnetic material ions into the dirac semimetal according to an embodiment.

The present disclosure relates to an integrated dual-sided all-in-one energy system including a plurality of vertically stacked dual-sided all-in-one energy apparatuses, each including an energy-harvesting device and an energy-storage device disposed on both sides of a substrate, and according to one embodiment of the present disclosure, an integrated dual-sided all-in-one energy system may include a plurality of dual-sided all-in-one energy apparatuses, each including an energy-harvesting device that is formed as an electrode pattern on one side of a substrate and generates electrical energy by harvesting energy based on a temperature difference between a first side and a second side and an energy-storage device that is formed on the other side of the substrate and is selectively connected to the energy-harvesting device based on the electrode pattern to store the generated electrical energy.

A plate-shaped thermoelectric conversion material having a first main surface and a second main surface on the opposite side of the first main surface is formed of semiconductor grains that are in contact with one another. The semiconductor grains each include a particle composed of a semiconductor containing an amorphous phase, and an oxidized layer covering the particle. The distance between the first main surface and the second main surface exceeds 0.5 mm.

The present invention relates to a thermoelectric material and, specifically, to a thermoelectric material capable of improving the figure of merit and a preparation method therefor. In the present invention, the thermoelectric material may comprise: a matrix compound having a composition of chemical formula 1 or 2; and particles having a composition of chemical formula 3 dispersed in the matrix compound. (AB.sub.2).sub.x(Bi.sub.2Se.sub.2.7Te.sub.0.3).sub.1-x, (CB).sub.x(Bi.sub.2Se.sub.2.7Te.sub.0.3).sub.1-x, D.sub.yE.sub.z.