A method for transferring a piezoelectric layer onto a support substrate comprises:providing a donor substrate including a heterostructure comprising a piezoelectric substrate bonded to a handling substrate, and a polymerized adhesive layer at the interface between the piezoelectric substrate and the handling substrate,forming a weakened zone in the piezoelectric substrate, so as to delimit the piezoelectric layer to be transferred,providing the support substrate,forming a dielectric layer on a main face of the support substrate and/or of the piezoelectric substrate,bonding the donor substrate to the support substrate, the dielectric layer being at the bonding interface, andfracturing and separating the donor substrate along the weakened zone at a temperature below or equal to 300 C.

An opposite-side dielectric ceramic layer is in contact with a first opposite-surface electrode layer and a second opposite-surface electrode layer. A mounting-side dielectric ceramic layer is in contact with a first mounting-surface electrode layer and a second mounting-surface electrode layer. A mounting-side inner electrode layer is separated from the first mounting-surface electrode layer and the second mounting-surface electrode layer by the mounting-side dielectric ceramic layer, disposed on the mounting-side dielectric ceramic layer, extending from a first side-surface electrode layer, and separated from a second side-surface electrode layer. In a cross-sectional view including a lamination direction and a length direction, a position in which the second mounting-surface electrode layer has a maximum thickness is shifted toward a second side surface in the length direction with respect to a position in which the second opposite-surface electrode layer has a maximum thickness.

A bonded body includes a supporting substrate composed of a polycrystalline ceramic material or monocrystalline material, a piezoelectric single crystal substrate and a bonding layer provided between the supporting substrate and piezoelectric single crystal substrate. The bonding layer has a composition of Si.sub.(1-x)O.sub.x (x represents an oxygen ratio). The oxygen ratio is increased or decreased from an end part of the bonding layer on the side of the piezoelectric single crystal substrate to an end part of the bonding layer on the side of the supporting substrate. The maximum value of the oxygen ratio x in the bonding layer is 0.013 or higher and 0.666 or lower, and the minimum value of the oxygen ratio is 0.001 or higher and 0.408 or lower.

A bonded body includes a supporting substrate, a piezoelectric single crystal substrate and a bonding layer provided between the supporting substrate and piezoelectric single crystal substrate. The bonding layer has a composition of Si.sub.(1-x)O.sub.x (x represents an oxygen ratio). The oxygen ratio x at a central part in a thickness direction of the bonding layer is higher than an oxygen ratio x at an end part of the bonding layer on a side of the piezoelectric single crystal substrate and an oxygen ratio x at an end part of the bonding layer on a side of the supporting substrate. The oxygen ratio at the central part in the thickness direction of the bonding layer is 0.013 or higher and 0.666 or lower.

A bonded body includes a supporting substrate, a bonding layer provided on a surface of a supporting substrate and composed of silicon oxide, and a piezoelectric material substrate of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. A convexity is provided on the surface of the supporting substrate, and the bonding layer includes a structural defect part extending above the convexity.

In an acoustic wave device including a piezoelectric material substrate and supporting body bonded with each other through a bonding layer, it is an object to provide the acoustic wave device having the structure for further improving the propagation loss and temperature characteristics of frequency of an acoustic wave. An acoustic wave device includes a piezoelectric material substrate, an electrode on the piezoelectric material substrate, a supporting body, and a bonding layer for bonding the piezoelectric material substrate and the supporting body. The bonding layer is composed of quartz crystal.

A touch surface device, comprising at least: an element comprising a first face forming the touch surface and a second face opposite to the first face; an acoustic wave sensor including at least one portion of piezoelectric material disposed between two electrodes, the portion of piezoelectric material and both electrodes being structured by forming surface wavinesses as wrinkles, the sensor being secured to the second face of the element such that apexes or valleys of the wrinkles are in contact with the second face of the element; an electronic circuit coupled to the electrodes of the sensor and configured to identify, from an electric signal intended to be outputted from the electrodes of the sensor, at least one touch gesture made on the touch surface.

Systems and techniques are provided for piezoelectric transducer array fabrication. A sheet of piezoelectric material may be diced into pieces of piezoelectric material. A sheet of elastic layer material may be spin coated with adhesive. The pieces of piezoelectric material may be placed onto the sheet of elastic layer material. Pressure may be applied to the pieces of piezoelectric material and the sheet of elastic layer material. The adhesive may be cured. Transduction elements may be cut from the pieces of piezoelectric material and the sheet of elastic layer material. Electronics may be mounted on a PCB mounting board. Adhesive may be applied onto the PCB mounting board. The transduction elements may be mounted on the PCB mounting board. A spacer may be mounted on the PCB mounting board. Adhesive may be applied onto the spacer and the transduction elements. Diaphragms may be mounted on the spacer.

A light scanning apparatus for causing a mirror to oscillate to scan with light reflected by the mirror includes an interconnect formed of gold; a protective film for covering the interconnect; and an adhesive film formed between the interconnect and the protective film.

Acoustic wave devices and methods of fabricating acoustic wave devices. A device includes a piezoelectric substrate and a conductor pattern formed on a surface of the piezoelectric substrate. The conductor pattern includes an interdigitated transducer (IDT) of a surface acoustic wave (SAW) resonator. The conductor pattern includes a substantially beryllium layer proximate the surface of the piezoelectric substrate.