An apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber. A central injector column can penetrate through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow metalorganic precursors into the reactor chamber in the closed position. A heated metalorganic precursor line can be coupled to the central injector column and configured to heat a low vapor pressure metalorganic precursor vapor contained in the heated metalorganic precursor line upstream of the central injector column to a temperature range between about 70° C. and 200° C.

A method of manufacturing a porous pressure sensor, comprising: providing a substrate; forming a piezoelectric film on an upper surface of the substrate; performing a porosification process on the piezoelectric film, such as performing a wet etching process or a heat treatment process to form a porous pressure sensing layer; and forming a first electrode and a second electrode on two opposite sides of the upper surface of the porous pressure sensing layer, respectively. The present application is also directed to a pressure sensors manufactured by the method of manufacturing the porous pressure sensor.

A method of manufacturing a porous pressure sensor, comprising: providing a substrate; forming a piezoelectric film on an upper surface of the substrate; performing a porosification process on the piezoelectric film, such as performing a wet etching process or a heat treatment process to form a porous pressure sensing layer; and forming a first electrode and a second electrode on two opposite sides of the upper surface of the porous pressure sensing layer, respectively. The present application is also directed to a pressure sensors manufactured by the method of manufacturing the porous pressure sensor.

A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.

A multi-layered piezoelectric ceramic-containing structure There is provided a multi-layered piezoelectric ceramic-containing structure comprising: a metal substrate; a metallic adhesive layer on a surface of the metal substrate; a non-metallic thermal barrier layer on the metallic adhesive layer; and a piezoelectric ceramic layer sandwiched between a first electrode layer and a second electrode layer, wherein the first electrode layer is on the non-metallic thermal barrier layer. There is also provided a method of forming the structure.

A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

A third through hole is formed in a crystal resonator plate of a crystal resonator to penetrate between a first main surface and a second main surface. A through electrode of the third through hole is conducted to a first excitation electrode. A seventh through hole is formed in a first sealing member of the crystal resonator to penetrate between a first main surface and a second main surface. The through electrode of the third through hole is conducted to the through electrode of the seventh through hole. The third through hole is not superimposed to the seventh through hole in plan view.

A thin film laminate comprises a metal layer consisting of a metal, and a thin film laminated on the surface of the metal layer, wherein a first direction is defined as one direction parallel to the surface of the metal layer, and a second direction is defined as one direction parallel to the surface of the metal layer and crossing the first direction; and the metal layer contains a plurality of first metal grains consisting of the metal and extending in the first direction on the surface of the metal layer, and a plurality of second metal grains consisting of the metal and extending in the second direction on the surface of the metal layer.