Multi-layered piezoelectric ceramic-containing structure
11527703 · 2022-12-13
Assignee
Inventors
- Kui Yao (Singapore, SG)
- Chee Kiang Ivan Tan (Singapore, SG)
- Shuting Chen (Singapore, SG)
- Shifeng Guo (Singapore, CN)
- Lei Zhang (Singapore, SG)
Cpc classification
H10N30/05
ELECTRICITY
H10N30/206
ELECTRICITY
H10N30/8542
ELECTRICITY
International classification
Abstract
A multi-layered piezoelectric ceramic-containing structure There is provided a multi-layered piezoelectric ceramic-containing structure comprising: a metal substrate; a metallic adhesive layer on a surface of the metal substrate; a non-metallic thermal barrier layer on the metallic adhesive layer; and a piezoelectric ceramic layer sandwiched between a first electrode layer and a second electrode layer, wherein the first electrode layer is on the non-metallic thermal barrier layer. There is also provided a method of forming the structure.
Claims
1. A multi-layered piezoelectric ceramic-containing structure comprising: a metal substrate; a metallic adhesive layer on a surface of the metal substrate; a non-metallic thermal barrier layer on the metallic adhesive layer; and a piezoelectric ceramic layer sandwiched between a first electrode layer and a second electrode layer, wherein the first electrode layer is on the non-metallic thermal barrier layer, wherein each of the metallic adhesive layer and the non-metallic thermal barrier layer has a thickness of ≥20 μm.
2. The structure according to claim 1, wherein the piezoelectric ceramic layer is a lead-free piezoelectric ceramic layer.
3. The structure according to claim 1, wherein the piezoelectric ceramic layer is a sodium potassium niobate-based or bismuth sodium titanate-based layer.
4. The structure according to claim 1, wherein the substrate comprises a base metal.
5. The structure according to claim 4, wherein the substrate is steel.
6. The structure according to claim 1, wherein the metallic adhesive layer comprises a metal or metal alloy.
7. The structure according to claim 6, wherein the metallic adhesive layer comprises NiCrAlY alloy.
8. The structure according to claim 1, wherein the non-metallic thermal barrier layer comprises an inorganic oxide.
9. The structure according to claim 8, wherein the non-metallic thermal barrier layer comprises yttria-stabilised zirconia (YSZ).
10. The structure according to claim 1, wherein the piezoelectric ceramic layer has a thickness of ≥20 μm.
11. The structure according to claim 1, wherein the non-metallic thermal barrier layer has a thickness of 100-500 μm.
12. The structure according to claim 1, wherein each of the first electrode layer and the second electrode layer has a thickness of ≥2 μm.
13. The structure according to claim 1, wherein the piezoelectric ceramic layer is formed by thermal spraying.
14. The structure according to claim 1, wherein each of the metallic adhesive layer and the non-metallic thermal barrier layer is formed by thermal spraying.
15. The structure according to claim 1, wherein the piezoelectric ceramic layer has an effective piezoelectric coefficient (d.sub.33) of 50-130 pm/V.
16. A method of forming the multi-layered piezoelectric ceramic-containing structure according to claim 1, the method comprising: providing a metal substrate; depositing a metallic adhesive layer on a surface of the metal substrate; depositing a non-metallic thermal barrier layer on the metallic adhesive layer; depositing a first electrode layer on the non-metallic thermal barrier layer; depositing a piezoelectric ceramic layer on the first electrode layer; and depositing a second electrode layer on the piezoelectric ceramic layer.
17. The method according to claim 16, wherein the depositing a metallic adhesive layer, the depositing a non-metallic thermal barrier layer and the depositing a piezoelectric ceramic layer comprises thermal spraying.
18. The method according to claim 16, wherein the method further comprises heat treating the piezoelectric ceramic layer at a pre-determined temperature prior to the depositing a second electrode layer.
19. The method according to claim 18, wherein the heat treating comprises heat treating the piezoelectric ceramic layer with a flame at the pre-determined temperature.
20. A multi-layered piezoelectric ceramic-containing structure comprising: a metal substrate; a metallic adhesive layer on a surface of the metal substrate; a non-metallic thermal barrier layer on the metallic adhesive layer, the non-metallic thermal barrier layer having a thickness of 100-500 μm; and a piezoelectric ceramic layer sandwiched between a first electrode layer and a second electrode layer, wherein the first electrode layer is on the non-metallic thermal barrier layer.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) In order that the invention may be fully understood and readily put into practical effect there shall now be described by way of non-limitative example only exemplary embodiments, the description being with reference to the accompanying illustrative drawings. In the drawings:
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DETAILED DESCRIPTION
(13) As explained above, there is a need for an improved multilayer structure with a piezoelectric ceramic thick-film layer coated on a metal substrate, and a method of forming the same.
(14) In general terms, the present invention provides a multi-layered structure on a metal substrate which demonstrates good adhesion between layers, and comprising a piezoelectric ceramic thick coating with single phase of perovskite structure, and a strong piezoelectric response. Further, the multi-layered structure is formed by a method which overcomes the problems associated with oxidation of the metal during deposition of the piezoelectric composition on the metal substrate, as well as structures with structural defects such as cracks and poor adhesion and delamination.
(15) According to a first aspect, the present invention provides a multi-layered piezoelectric ceramic-containing structure comprising: a metal substrate; a metallic adhesive layer on a surface of the metal substrate; a non-metallic thermal barrier layer on the metallic adhesive layer; and a piezoelectric ceramic layer sandwiched between a first electrode layer and a second electrode layer, wherein the first electrode layer is on the non-metallic thermal barrier layer.
(16) A schematic representation of the multi-layered piezoelectric ceramic-containing structure is shown in
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(18) The metallic adhesive layer 104 and the non-metallic thermal barrier layer 106 form the intermediate layers between the substrate 102 and the piezoelectric ceramic layer 110. In particular, the intermediate layers comprising the metallic adhesive layer 104 and the non-metallic thermal barrier layer 106 enhance the adhesion of the adjacent layers on the substrate 102, protect the substrate 102 from corrosion, and/or act as a thermal barrier layer for achieving a high quality piezoelectric ceramic layer 110 on the metal substrate 102. In particular, the composition and thickness of the metallic adhesive layer 104 and the non-metallic thermal barrier layer 106 contribute to achieving a high quality piezoelectric ceramic layer 110 on the metal substrate 102.
(19) Each of the layers will be described in more detail.
(20) Substrate
(21) The metal substrate 102 may be any suitable metal substrate. For the purposes of the present application, the term metal is defined to include metal and metal alloys. For example, the metal substrate may comprise a base metal. In particular, the metal substrate may comprise, but is not limited to, steel, aluminium, titanium, copper, or alloys comprising combinations thereof. Even more in particular, the substrate may be steel.
(22) The substrate may be in any form. For example, the substrate may be in the form of a plate, rod, pipe, circular disk, with a flat or curved surface. According to a particular aspect, the substrate may be in the form of a flat plate. According to another particular aspect, the substrate may be in the form of a pipe.
(23) According to a particular aspect, when the substrate 102 is a flat plate, the multi-layered structure 100 may be a flat structure.
(24) According to a particular aspect, when the substrate 102 is a pipe, the multi-layered structure 100 may be a curved structure or a tube structure.
(25) Metallic Adhesive Layer
(26) The metal adhesive layer 104 may comprise a metallic material to enhance the adhesion of the adjacent layers and for protecting the substrate 102 against corrosion. For the purposes of the present application, the term metallic material is defined to include any metal or metal alloy. The metallic adhesive layer 104 may comprise, but is not limited to, titanium (Ti), nickel (Ni), platinum (Pt), ruthenium (Ru)- or Pt-based nickel aluminide alloy, or an alloy such as MCrAlY, wherein M is a metal selected from, but not limited to, nickel (Ni), iron (Fe), or cobalt (Co). In particular, the metallic adhesive layer 104 may be NiCrAlY alloy.
(27) The metallic adhesive layer 104 may be of any suitable thickness. For example, the metallic adhesive layer 104 may have a thickness of ≥20 μm. In particular, the metallic adhesive layer 104 may have a thickness of 50-150 μm, 55-145 μm, 60-140 μm, 65-135 μm, 70-130 μm, 80-120 μm, 90-110 μm, 100-105 μm. Even more in particular, the metallic adhesive layer 104 may have a thickness of about 100 μm.
(28) The metallic adhesive layer 104 may be formed by any suitable method. For example, the metallic adhesive layer 104 may be formed by thermal spraying.
(29) Non-Metallic Thermal Barrier Layer
(30) The non-metallic thermal barrier layer 106 may comprise a non-metallic material to act as a thermal barrier layer. In particular, the non-metallic thermal barrier layer 106 may comprise an oxide, preferably an inorganic oxide. For example, the non-metallic thermal barrier layer 106 may comprise, but not limited to, yttria-stabilized zirconia (YSZ), alumina, rare-earth oxides, rare-earth zirconates, or a combination thereof. Even more in particular, the non-metallic thermal barrier layer 106 may comprise YSZ.
(31) The non-metallic thermal barrier layer 106 may be of any suitable thickness. For example, the non-metallic thermal barrier layer 106 may have a thickness of ≥20 μm. In particular, the non-metallic thermal barrier layer 106 may have a thickness of 100-500 μm, 125-475 μm, 150-450 μm, 175-425 μm, 200-400 μm, 225-375 μm, 250-350 μm, 275-325 μm. 300-310 μm. Even more in particular, the non-metallic thermal barrier layer 106 may have a thickness of about 300 μm.
(32) The non-metallic thermal barrier layer 106 may be formed by any suitable method. For example, the non-metallic thermal barrier layer 106 may be formed by thermal spraying.
(33) First Electrode Layer 108 and Second Electrode Layer 112
(34) The first electrode layer 108 may be provided on the non-metallic thermal barrier layer 106, while the second electrode layer 112 may be provided on the piezoelectric ceramic layer 110.
(35) The first electrode layer 108 and the second electrode layer 112 may comprise any suitable metal or conductive oxide. For example, the metal may be, but not limited to, platinum (Pt), silver (Ag), palladium (Pd), gold (Au), rhodium (Rh), ruthenium (Ru), or alloys comprising combinations of metals thereof. In particular, the metal may be Ag or a Pd/Ag alloy. According to a particular aspect, the Pd/Ag alloy may comprise 30 wt % Pd and 70 wt % Ag based on the total weight of the alloy.
(36) The conductive oxide may be, but not limited to, LaNiO.sub.3, La.sub.0.5Sr.sub.0.5CoO.sub.3, La.sub.0.7Sr.sub.0.3MnO.sub.3, or a combination thereof.
(37) The first electrode layer 108 and the second electrode layer 112 may be the same or different from each other. The first electrode layer 108 and the second electrode layer 112 may each comprise a metal or conductive oxide. In particular, the first electrode layer 108 may comprise Pd/Ag and the second electrode layer 112 may comprise Ag.
(38) The first electrode layer 108 and the second electrode layer 112 may have a suitable thickness. For example, each of the first electrode layer 108 and the second electrode layer 112 may have a thickness of ≥2 μm.
(39) In particular, the first electrode layer 108 may have a thickness of 5-30 μm. Even more in particular, the first electrode layer 108 may have a thickness of 10-15 μm.
(40) In particular, the second electrode layer 112 may have a thickness of 2-10 μm. Even more in particular, the second electrode layer 112 may have a thickness of 3-5 μm.
(41) Piezoelectric Ceramic Layer
(42) The piezoelectric ceramic layer 110 may comprise any suitable piezoelectric material.
(43) For example, the piezoelectric ceramic layer 110 may comprise a piezoelectric oxide ceramic material. In particular, the piezoelectric ceramic layer 110 may be a lead-free piezoelectric ceramic layer, wherein the piezoelectric ceramic layer 110 may comprise a lead-free piezoelectric ceramic material. For example, the piezoelectric ceramic layer 110 may comprise, but is not limited to, a sodium potassium niobate (KNN)-based or bismuth sodium titanate (BNT)-based material. According to a particular aspect, the piezoelectric ceramic layer 110 may comprise a KNN-based piezoelectric material. Even more in particular, the piezoelectric ceramic layer 110 may comprise (K.sub.0.44Na.sub.0.52Li.sub.0.04)(Nb.sub.0.84Ta.sub.0.10Sb.sub.0.06)O.sub.3.
(44) The piezoelectric ceramic layer 110 may have a suitable thickness. For example, the piezoelectric ceramic layer 110 may have a thickness of ≥20 μm. In particular, the piezoelectric ceramic layer 110 may have a thickness of 50-300 μm, 75-275 μm. 100-250 μm, 125-225 μm, 150-200 μm, 175-180 μm. Even more in particular, the piezoelectric ceramic layer 110 may have a thickness of about 150 μm.
(45) The deposited piezoelectric ceramic layer 110 may exhibit suitable piezoelectric performance. For example, the piezoelectric ceramic layer 110 may have an effective piezoelectric coefficient (d.sub.33) of 50-130 pm/V. In particular, the effective piezoelectric coefficient (d.sub.33) may be 55-125 pm/V, 60-120 pm/V, 65-115 pm/V, 70-110 pm/V, 75-105 pm/V, 80-100 pm/V, 85-95 pm/V, 87-90 pm/V. Even more in particular, piezoelectric ceramic layer 110 may have a d33 of 90-120 pm/V.
(46) The piezoelectric ceramic layer 110 may be formed by any suitable method. For example, the piezoelectric ceramic layer 110 may be formed by thermal spraying.
(47) The multi-layered structure 100 may be suitable for use in various applications. For example, the multi-layered structure 100 may be used in, but not limited to, structural health monitoring, particularly for steel-based engineering structures such as for aircrafts, ships, automobiles, trains, rails, various metallic infrastructures and industry machines.
(48) According to a second aspect, the present invention provides a method of forming the multi-layered piezoelectric ceramic-containing structure described above, the method comprising: providing a metal substrate; depositing a metallic adhesive layer on a surface of the metal substrate; depositing a non-metallic thermal barrier layer on the metallic adhesive layer; depositing a first electrode layer on the non-metallic thermal barrier layer; depositing a piezoelectric ceramic layer on the first electrode layer; and depositing a second electrode layer on the piezoelectric ceramic layer.
(49) The metal substrate may be as described above. According to a particular aspect, the method may further comprise cleaning, and optionally roughening, the surface of the metal substrate onto which the metallic adhesive layer is to be deposited prior to the depositing a metallic adhesive layer on a surface of the metal substrate. The cleaning, and optionally roughening may comprise any suitable method of cleaning and roughening the surface of the substrate, respectively. In particular, the cleaning, and optionally roughening, may comprise sandblasting the surface of the metal substrate by ceramic particles, such as alumina particles. Cleaning, and optionally roughening, may provide better adhesion of the metallic adhesive layer to the surface of the metal substrate.
(50) The depositing a metallic adhesive layer, the depositing a non-metallic thermal barrier layer and the depositing a piezoelectric ceramic layer may comprise any suitable depositing method. According to a particular aspect, the depositing a metallic adhesive layer, the depositing a non-metallic thermal barrier layer and/or the depositing a piezoelectric ceramic layer may comprise thermal spraying. The thermal spraying may comprise any suitable thermal spraying method including, but not limited to: atmospheric plasma spraying (APS), low pressure plasma spraying (LPPS), vacuum plasma spraying (VPS), high velocity oxygen fuel (HVOF), or a combination thereof.
(51) In particular, the depositing a metallic adhesive layer and the depositing a non-metallic thermal barrier layer may be by APS. Even more in particular, the APS may be by using a gas stabilised plasma gun.
(52) The depositing a first electrode layer on the non-metallic thermal barrier layer may be by any suitable depositing method. For example, the depositing may be by brushing, spray coating, screen printing, inkjet printing, dip coating, or a combination thereof. In particular, the depositing may be by painting an ink comprising the material comprised in the first electrode layer with a brush.
(53) The method may further comprise heat treating the first electrode layer prior to the depositing a piezoelectric ceramic layer. The heat treating may be under suitable conditions. For example, the heat treating may comprise heat treating the first electrode layer at a pre-determined temperature. The pre-determined temperature may be any suitable temperature. For example, the pre-determined temperature may be 950-1100° C.
(54) The method may further comprise preparing a precursor mixture of piezoelectric ceramic material prior to the depositing a piezoelectric ceramic layer on the first electrode layer. The precursor mixture may be prepared by any suitable method. According to a particular aspect, the precursor mixture may be formed into a suitable particle size for use in the depositing a piezoelectric ceramic layer. In particular, the preparing may comprise preparing the precursor mixture into a suitable particle size for use in the depositing a piezoelectric ceramic layer by thermal spraying. The thermal spraying may be as described above. In particular, the thermal spraying may comprise APS.
(55) In order to improve the crystallinity of the piezoelectric ceramic layer, the method may further comprise heat treating the piezoelectric ceramic layer prior to the depositing a second electrode layer. The heat treating may be under suitable conditions. For example, the heat treating may comprise heat treating the piezoelectric ceramic layer at a pre-determined temperature. The pre-determined temperature may be any suitable temperature. For example, the pre-determined temperature may be 950-1100° C. The heat treating may be by any suitable method. For example, the heat treating may be by, but not limited to, a flame at the pre-determined temperature.
(56) The depositing a second electrode layer on the piezoelectric ceramic layer may be by any suitable depositing method. For example, the depositing may be by brushing, spray coating, screen printing, inkjet printing, dip coating, or a combination. In particular, the depositing may be by painting an ink comprising the material comprised in the second electrode layer with a brush.
(57) The method may further comprise heat treating the second electrode layer. The heat treating may be under suitable conditions. For example, the heat treating may comprise heat treating the second electrode layer at a pre-determined temperature. The pre-determined temperature may be any suitable temperature. For example, the pre-determined temperature may be 80-750° C.
(58) The method of the present invention provides a suitable method for directly forming ultrasonic transducers on metallic structures compared to using handheld ultrasonic transducers or manually installed discrete devices. The method further provides a suitable method which is robust with all inorganic metallic and ceramic structures for applications at elevated temperatures in a harsh environment. In particular, the method is applicable for large area applications as well as able to exhibit strong electromechanical coupling from the piezoelectric ceramic layer with suitable thickness and enhanced performance properties.
(59) Having now generally described the invention, the same will be more readily understood through reference to the following embodiment which is provided by way of illustration, and is not intended to be limiting.
EXAMPLE
Example 1—Preparation of Multi-Layered Piezoelectric Ceramic-Containing Structure
(60) A multi-layered structure comprising a stainless steel (316L) flat plate, a metallic adhesion layer made of NiCrAlY alloy, a non-metallic thermal barrier layer made of YSZ (with 8 mol % Y.sub.2O.sub.3), a first electrode made of Pd/Ag (30/70 wt %), a lead-free piezoelectric ceramic layer with a composition of (K.sub.0.44Na.sub.0.52Li.sub.0.04)(Nb.sub.0.84Ta.sub.0.10Sb.sub.0.06)O.sub.3 ((K,Na,Li)(Nb,Ta,Sb)O.sub.3), and a second electrode made of Ag is formed. A schematic representation of the cross-sectional view of the multi-layered structure formed is as shown in
(61) The multi-layered structure was formed as follows. Stainless steel plates were sandblasted by alumina particles in order to provide good adhesion with the metallic adhesive layer. The metallic adhesive layer made of NiCrAlY alloy with a thickness of about 100 μm was deposited on the steel substrates by plasma spray technique, from NiCrAlY feedstock powder with a particle size range 45-75 μm. The alloy composition was Ni-22% Cr-10% Al-1% Y.
(62) The non-metallic thermal barrier layer made of YSZ (ZrO.sub.2 with 8 mol % Y.sub.2O.sub.3) with a thickness of 300 μm was deposited by thermal spray on the metallic adhesive layer, from YSZ feedstock powder with a particle size range 11-125 μm used in the spraying process. Both feedstock materials were deposited with atmospheric plasma spray technique, in which a gas stabilized plasma gun was used.
(63) The first electrode layer made of Pd/Ag (30/70 wt %) was then deposited on the non-metallic thermal barrier layer by painting Pd/Ag ink with a brush, followed by a thermal treatment at 30° C./min to 1100° C. for 10 minutes.
(64) To deposit the piezoelectric ceramic layer with the composition of (K,Na,Li)(Nb,Ta,Sb)O.sub.3, K.sub.2CO.sub.3 (99.5%), Na.sub.2CO.sub.3 (99.0%), Li.sub.2CO.sub.3 (99.999%), Nb.sub.2O.sub.5 (99.9%), Ta.sub.2O.sub.5 (99.85%), and Sb.sub.2O.sub.5 (99.998%) powders were used as the starting materials with stoichiometric composition of (K.sub.0.44Na.sub.0.52Li.sub.0.04)(Nb.sub.0.84Ta.sub.0.10Sb.sub.0.06)O.sub.3 plus 10 mol % excess K and Na. The weighed materials were mixed with ethanol and zirconia balls in a planetary ball mill for 24 hours. The slurry was then dried in an oven, crushed using an agate mortar and pestle, and calcined at 850° C. for 5 hours in an alumina crucible to form (K,Na,Li)(Nb,Ta,Sb)O.sub.3 perovskite phase. The calcined powder was crushed, compacted, and calcined at 1000° C. for 5 hours in an alumina crucible, in order to achieve the desired particle size for subsequent plasma spray deposition process. The resulting powder was introduced into to an atmospheric plasma spraying system, and (K,Na,Li)(Nb,Ta,Sb)O.sub.3 layer with a thickness of about 150 μm was deposited on the stainless steel plate at ambient pressure using Ar plasma with plasma power of 17 kW, feeding rate of 20 g/min, and torch-substrate distance of 75 mm. In order to improve the crystallinity of the thermal sprayed (K,Na,Li)(Nb,Ta,Sb)O.sub.3 layer, a post-spray heat treatment was conducted in an oven at 1100° C. for 30 minutes, with a ramping rate of 30° C./min.
(65) Finally, patterned Ag upper electrodes were deposited on the (K,Na,Li)(Nb,Ta,Sb)O.sub.3 layer by painting using a brush with the aid of a shadow mask, followed with firing at 520° C. for 15 minutes.
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(68) The (K,Na,Li)(Nb,Ta,Sb)O.sub.3 ceramic layer exhibited a high dielectric constant of 246 and a low dielectric loss of 1.8%, measured at 1 kHz and room temperature, as shown in
(69) To study piezoelectric properties, the obtained (K,Na,Li)(Nb,Ta,Sb)O.sub.3 ceramic layer was poled at 120° C. under an electric field of 35 kV/cm. The effective piezoelectric coefficient (d.sub.33) was measured using a laser scanning vibrometer, under the condition with the substrate's mechanical clamping.
Example 2—Comparative Example
(70) A multi-layered structure with the same substrate, piezoelectric ceramic and second electrode layers as Example 1, but without the first electrode layer, the metallic adhesive layer and the non-metallic thermal barrier layer, is schematically illustrated in
(71) Experimental results showed that, without the intermediate layers (i.e. the metallic adhesive layer and the non-metallic thermal barrier layer) as disclosed in Example 1, it was not feasible to obtain the two structures as illustrated in
(72) In contrast, the multi-layered structure as described in Example 1 exhibited structural integrity after heat treatment at 1100° C., as shown in
Example 3—Preparation of Multi-Layered Piezoelectric Ceramic-Containing Structure on a Pipe
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(74) The multilayer structure was produced by a processing method as described in Example 1, but with different heat treatment conditions. It was found that the heat treatment conditions for the first electrode layer and the (K,Na,Li)(Nb,Ta,Sb)O.sub.3 piezoelectric ceramic layer were critical in achieving the integrity for the multi-layered tube structure. The Pd/Ag (30/70) first electrode layer was heat-treated in an oven at a faster ramp rate of 100° C./min to a lower temperature of 950° C. for a shorter duration of 10 minutes.
(75) After deposition of the (K,Na,Li)(Nb,Ta,Sb)O.sub.3 piezoelectric ceramic layer with a thickness of 120 μm by thermal spray, post-spray heat treatments were conducted in an oven also with the faster ramp rate of 100° C./min to a lower temperature of 950° C. for a shorter duration of 10 minutes.
(76) The heat treatment conditions as described above in this example achieved the structural integrity wherein the metal substrate was a stainless steel pipe. Using the same heat treatment conditions as described in Example 1 for a flat structured substrate resulted in failure in the multi-layered structure on the stainless pipe structure in the form of cracks and delamination.
(77) To study piezoelectric properties, the (K,Na,Li)(Nb,Ta,Sb)O.sub.3 layer was poled at room temperature for 10 minutes under an electric field of 30 kV/cm. The piezoelectric coefficient (d.sub.33) was measured using a laser scanning vibrometer.
Example 4—Variation in Preparation of Multi-Layered Piezoelectric Ceramic-Containing Structure on a Pipe
(78) The multi-layered structure on the stainless steel pipe was produced by the same processing method as described in Example 3, except that the piezoelectric ceramic layer comprising (K,Na,Li)(Nb,Ta,Sb)O.sub.3 was heat-treated by a flame from a butane blowtorch instead of thermal treatment in an oven.
(79) Instead of a flame from a butane blowtorch, an electromagnetic irradiation (such as laser, infrared) or a flame from any other fuel blowtorch may also be used.
(80) The heat treatment of the piezoelectric ceramic layer comprising (K,Na,Li)(Nb,Ta,Sb)O.sub.3 was carried out for 8 minutes in air. The temperature reached 1102° C. The sample, after flame annealing for 8 minutes, exhibited solid structural integrity without cracking or delamination. Thus, fast annealing using flame blowtorch may produce the piezoelectric ceramic coating without cracking or delaminating on stainless steel pipe at least up to 1100° C.
(81) For piezoelectric testing, a Ag electrode was deposited on the piezoelectric ceramic layer comprising (K,Na,Li)(Nb,Ta,Sb)O.sub.3 as the second electrode layer. After the piezoelectric ceramic layer was poled at room temperature under an electric field of 25 kV/cm for 10 minutes, the effective piezoelectric coefficient (d.sub.33) was measured using a laser scanning vibrometer, under the conditions with the substrate's mechanical clamping.
(82) Whilst the foregoing description has described exemplary embodiments, it will be understood by those skilled in the technology concerned that many variations may be made without departing from the present invention.