Embodiments of the invention include a wearable blood-pressure monitor and methods of forming such devices. In an embodiment, the blood-pressure monitor includes a stretchable substrate. Additionally, a semiconductor die may be embedded within the stretchable substrate. In order to determine blood-pressure, the blood-pressure monitor may include an electrocardiogram sensor and a piezoelectric sensor for detecting a ballistocardiograph response. In an embodiment, both types of sensor may be electrically coupled to the semiconductor die. Embodiments of the invention include a piezoelectric sensor that includes a piezoelectric layer and a first and second electrode. In an embodiment the first electrode is in contact with a first surface of the piezoelectric layer, and the second electrode is in contact with a second surface of the piezoelectric layer that is opposite to the first surface.

An electromechanical transducer element including a lower electrode, an electromechanical transducer film and an upper electrode formed on the electromechanical transducer film.

A piezoelectric film which is better in heat and deformation resistant properties than those in the prior art is provided along with a method of manufacture. The film is a piezoelectric film that is composed of a copolymer of vinylidene fluoride and trifluoroethylene, the copolymer having a content of vinylidene fluoride in a range of not less than 82 mol % and not more than 86 mol % and having a molecular weight not less than 600,000. The piezoelectric film is subjected to a heat treatment for crystallization of the copolymer at a temperature ranging from not less than 140 C. to not more than 150 C., and is thereby caused to develop piezoelectric property. The piezoelectric film further has a heat resistance of not less than 140 C. and a breaking distortion of not less than 8% and not more than 55%, and an excellent deformation resistant property.

A rotary wing aircraft that comprises a structural arrangement with at least one first fiber reinforced polymer component and at least one second fiber reinforced polymer component that are spaced apart from each other by an interspace and that are rigidly attached to an associated structural component, wherein the at least one first fiber reinforced polymer component and the at least one second fiber reinforced polymer component are at least partly interconnected by means of an electrically conductive connection, and wherein the electrically conductive connection comprises at least one sprayed layer of electrically conductive particles, the at least one sprayed layer of electrically conductive particles being provided in the interspace.

There is provided a piezoelectric stack including: a substrate (1); a bottom electrode film (2) on the substrate; a piezoelectric film (3) on the bottom electrode film, having a planar area smaller than a planar area of the bottom electrode film; a top electrode film (4) on the piezoelectric film; and an insulating film (5) provided from the top electrode film to the bottom electrode film and covering at least a part of a side surface of the piezoelectric film, wherein the insulating film has a slope (9a) filling a step between a top surface of the top electrode film and a top surface of the bottom electrode film, and the slope has a shape alleviating the step.

There is provided a piezoelectric stack including: a substrate (1); a bottom electrode film (2) on the substrate; a piezoelectric film (3) on the bottom electrode film, having a planar area smaller than a planar area of the bottom electrode film; a top electrode film (4) on the piezoelectric film; and an insulating film (5) provided from the top electrode film to the bottom electrode film and covering at least a part of a side surface of the piezoelectric film, wherein the insulating film has a slope (9a) filling a step between a top surface of the top electrode film and a top surface of the bottom electrode film, and the slope has a shape alleviating the step.

A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.

A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.

The present disclosure relates generally to processes for preparing metal oxide nanosheets. In particular, the process may comprise generating a liquid metal film comprising a metal oxide surface layer, and exfoliating the metal oxide surface layer to form a metal oxide nanosheet. The present disclosure also relates generally to devices comprising the metal oxide nanosheets, such as piezoelectric generators and sensors.

The present disclosure relates generally to processes for preparing metal oxide nanosheets. In particular, the process may comprise generating a liquid metal film comprising a metal oxide surface layer, and exfoliating the metal oxide surface layer to form a metal oxide nanosheet. The present disclosure also relates generally to devices comprising the metal oxide nanosheets, such as piezoelectric generators and sensors.