Patent classifications
H10N30/077
HIGH VOLTAGE FLEXIBLE MOLECULAR PIEZOELECTRIC DEVICES
A flexible biocompatible material, comprising: an oligopeptide self-assembled monolayer disposed/deposited on a first electrode; and a dielectric layer disposed/deposited over and/or attached to the oligopeptide self-assembled monolayer and the first electrode.
HIGH VOLTAGE FLEXIBLE MOLECULAR PIEZOELECTRIC DEVICES
A flexible biocompatible material, comprising: an oligopeptide self-assembled monolayer disposed/deposited on a first electrode; and a dielectric layer disposed/deposited over and/or attached to the oligopeptide self-assembled monolayer and the first electrode.
FLEXIBLE PIEZOELECTRIC FILM-BASED POWER SOURCE
A compact system for optimizing energy harvesting efficiency using of very thin (less than 10 ?m thickness) PVDF films. The system is comprised of a flexible substrate such as polypropylene (PP) or Polydimethylsiloxane (PDMS) that supports PVDF thin films sandwiched between two aluminum electrode sheets. The PVDF films may be fabricated at different selected thicknesses by increasing spin rates. The PVDF films may also be fabricated in various different stacking arrangements in order to further allow the electrode to more efficiently produce energy.
FLEXIBLE PIEZOELECTRIC FILM-BASED POWER SOURCE
A compact system for optimizing energy harvesting efficiency using of very thin (less than 10 ?m thickness) PVDF films. The system is comprised of a flexible substrate such as polypropylene (PP) or Polydimethylsiloxane (PDMS) that supports PVDF thin films sandwiched between two aluminum electrode sheets. The PVDF films may be fabricated at different selected thicknesses by increasing spin rates. The PVDF films may also be fabricated in various different stacking arrangements in order to further allow the electrode to more efficiently produce energy.
Method of manufacturing ultrasonic probe
Provided is a method of manufacturing an ultrasonic probe. The method includes forming a sacrificial layer on a substrate; forming a plurality of openings in the sacrificial layer that are separated from one another; forming piezoelectric units by growing a piezoelectric element in each of the plurality of openings; and removing the sacrificial layer.
PIEZOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING SAME
A piezoelectric element having a vibrating section including a vibrating plate, a first electrode, a piezoelectric layer, and a second electrode, in which a crystal orientation of a piezoelectric material forming the piezoelectric layer is (100) and a crystal structure of the piezoelectric material is a tetragonal crystal, and a total thickness T.sub.1 of the vibrating plate and the first electrode and a total thickness T.sub.2 of the piezoelectric layer and the second electrode have a relationship of T.sub.1?T.sub.2.
Processing of thin film organic ferroelectric materials using pulsed electromagnetic radiation
Disclosed is a method for producing a polymeric ferroelectric material. The method can include (a) obtaining a polymeric ferroelectric precursor material, and (b) subjecting the polymeric ferroelectric precursor material to pulsed electromagnetic radiation sufficient to form a polymeric ferroelectric material having ferroelectric hysteresis properties, wherein the polymeric ferroelectric precursor material, prior to step (b), has not previously been subjected to a thermal treatment for more than 55 minutes.
Epitaxial Quartz Homeotypes Crystal Growth On Beta Quartz For Pressure Sensors and Accelerometers
The purpose of quartz homeotypes grown epitaxially on beta quartz for use in pressure sensors or accelerometers is to be able to drastically cut down production costs on otherwise expensive or time-consuming to grow crystals that are necessary in various industrial applications. This is done via epitaxial growth of quartz homeotypes across the whole surface of a sample of beta quartz, an easily accessible and high temperature capable crystal. This invention also applies to the epitaxial application of piezoelectric material atop a piezoelectric crystal for the purpose of altering its piezoelectric coefficient and the epitaxial application of a piezoelectric crystal atop a host crystal for the purpose of increasing its insulation resistance.
Flexible molecular piezoelectric device
A piezoelectric material, comprising: a piezoelectric self-assembling monolayer of oligopeptides; a conductive surface; and a substrate, wherein the conductive surface is located between the piezoelectric self-assembling monolayer of oligopeptides and the substrate. A touch sensitive device, comprising: a first piezoelectric material, comprising: a piezoelectric self-assembling monolayer of oligopeptides containing a dipole moment; a conductive surface; and a substrate; a second piezoelectric material, comprising: a piezoelectric self-assembling monolayer of oligopeptides containing a dipole moment; a conductive surface; and a substrate, wherein the oligopeptides making up the self-assembling monolayer of the first and second piezoelectric materials, respectively, have the same amino acid sequence but have an equal and opposite dipole moment.
PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ELEMENT APPLICATION DEVICE, AND METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT
A piezoelectric element includes a first electrode, a piezoelectric layer formed on the first electrode by a solution method and formed of a perovskite-type composite oxide including potassium, sodium, and niobium, and a second electrode provided on the piezoelectric layer, in which the composite oxide further includes lithium and manganese, the content of lithium is 3 mol % to 5 mol % in the total number of moles of metal in the A site, the content of manganese is 5 mol % or less in the total number of moles of metal in the B site, and a lithium measured intensity (CPS) maximum value in the film thickness direction of the piezoelectric layer in SIMS measurement is less than 2.65 times a minimum value.