A sensor (1) which consists of a first electrode (3a), a ferroelectric layer (2) and a second electrode (3b) is described. The second electrode (3b) is connected to ground and the ferroelectric layer (2) is arranged between the first and second electrodes (3a, 3b).

According to the present invention, a piezoelectric film having a single crystal structure is able to be formed, from various piezoelectric materials, on a film structure of the present invention. A film structure according to the present invention includes: a substrate; a buffer film which is formed on the substrate and has a tetragonal crystal structure containing zirconia; a metal film containing a platinum group element, which is formed on the buffer film by means of epitaxial growth; and a film containing Sr(Ti.sub.1−x, Ru.sub.x)O.sub.3 (wherein 0≤x≤1), which is formed on the metal film by means of epitaxial growth.

The invention relates to a method for producing ceramics having piezoelectric properties in predominantly aqueous suspending agents.

A piezoelectric element includes: a first electrode formed at a vibration plate; a seed layer formed at the first electrode; a piezoelectric film containing potassium, sodium, and niobium and formed at the seed layer; and a second electrode formed at the piezoelectric film. The piezoelectric film contains lithium and one or more first transition elements. The seed layer contains bismuth. When the piezoelectric film is divided into two equal parts in a stacking direction, the second electrode side is defined as a first region, and the first electrode side is defined as a second region, a bismuth intensity obtained by SIMS measurement at a boundary between the first region and the second region is equal to or less than 1/500 of a maximum bismuth intensity obtained by the SIMS measurement of the piezoelectric film.

A material deposition method comprising: preparing a precursor solution of Pb(Zr.sub.x,Ti.sub.1-x)O.sub.3 using 1-methoxy-2-propanol as a solvent and acetylacetone as a modifier; and forming a seed layer for a electroactive film by spin coating the precursor solution on a substrate. The electroactive film can be PZT, PZO or BFO, spin-coated or inkjet printed on the seed layer. Experience shows pure orientation for the piezoelectric film thanks to the use of 1-methoxy-2-propanol when preparing the seed layer. This orientation is attributed to the formation of nano crystals on the seed layer constituting a pre-crystallization.

This piezoelectric element includes a lower electrode formed on a substrate, a piezoelectric layer formed on the lower electrode, and an upper electrode formed on the piezoelectric layer. The upper electrode includes a first upper electrode layer made of a metal oxide including an amorphous portion at least at a boundary with the piezoelectric layer and a second upper electrode layer formed on the first upper electrode layer.

The present disclosure is directed towards a formulation for piezoelectric materials. The formulation may be printed including 2D or 3D printing. The formulation contains ceramic particles, a sol-gel, a high boiling point solvent and a binder.

The present invention relates to an electrical component for a microelectromechanical systems (MEMS) device, in particular, but not limited to, an electromechanical actuator. In one aspect, the present invention provides an insulated electrical component for a microelectromechanical systems device comprising: i) a substrate layer comprising first and second sides spaced apart in a thickness direction; ii) one or more electrical elements arranged over the first side of the substrate layer, wherein each of the one or more electrical elements comprises: a) a ceramic member; and b) first and second electrodes disposed adjacent the ceramic member such that a potential difference may be established between the first and second electrodes and through the ceramic member during operation; iii) a continuous insulating layer, or laminate of insulating layers, arranged to overlie each of the one or more electrical elements arranged on the first side of the substrate layer; and iv) a passivation layer, or laminate of multiple passivation layers, disposed adjacent to, and at least partially overlying, each of the one or more electrical elements so as to provide electrical passivation between the first and second electrodes of each of the one or more electrical elements; wherein: a) the passivation layer, or at least an innermost layer of the laminate of multiple passivation layers which is disposed adjacent each of the one or more underlying electrical elements, is discontinuous; and/or b) the laminate of multiple passivation layers is recessed at a side which faces away from each of the underlying electrical elements, wherein a recess is provided in a region overlying each of the one or more electrical elements, such that the laminate of passivation layers is thinner in a thickness direction across the recess compared to other non-recessed regions of the laminate of passivation layers.

Provided is a piezoelectric single crystal comprising an internal bias electric field, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that as a change in each composition of [A] site ions, [B] site ions and [O] site ions from a perovskite type crystal structure ( [A] [B] O.sub.3), and oxygen partial-pressure during heat treatment in terms of a manufacturing process are controlled, while maintaining the inherent high dielectric constant and piezoelectric constant, the high internal bias electric field (EI) characteristic essential for the electrical stability of the piezoelectric single crystal is simultaneously satisfied. Therefore, piezoelectric application components and dielectric application components using the piezoelectric single crystal having excellent characteristics can be used in a wide temperature range and operating voltage conditions.

A piezoelectric thin film element contains an electrode layer (first electrode layer) and a piezoelectric thin film directly or indirectly stacked on the electrode layer. The piezoelectric thin film contains a tetragonal crystal 1 of a perovskite-type oxide and a tetragonal crystal 2 of a perovskite-type oxide. A (001) plane of the tetragonal crystal 1 is oriented in a normal direction of a surface of the electrode layer. A (001) plane of the tetragonal crystal 2 is inclined with respect to the (001) plane of the tetragonal crystal 1. A spacing of (001) planes of the tetragonal crystal 1 is c1. A spacing of (100) planes of the tetragonal crystal 1 is a1. A spacing of (001) planes of the tetragonal crystal 2 is c2. A spacing of (100) planes of the tetragonal crystal 2 is a2. c1/a1 is larger than c2/a2.