A piezoelectric device that includes a sintered body in which a first conductor portion and a second conductor portion are disposed on both principal surfaces of a piezoelectric ceramic base body. The first conductor portion includes conductive films having a predetermined pattern. An insulating film is formed on the principal surface of the piezoelectric ceramic base body on which the conductive films are disposed such that portions of the conductive films are exposed therethrough. The insulating film has a malleability equal to or greater than that of the conductive films.

An audio device includes a vibration member, and a first piezoelectric vibrator and a second piezoelectric vibrator that are provided on the vibration member. A natural frequency of the first piezoelectric vibrator is larger than a natural frequency of the second piezoelectric vibrator.

A structurally integral multilaminar planer device is provided where the layers are bonded without use of adhesive. The device includes a perforated metal plate and a transductive ceramic layer. The perforated metal plate and transductive ceramic layer are bonded by a conductive metal ink that is subject to a thermal cycle process.

An electronic device includes a display receiving a user input, at least one piezoelectric element disposed adjacent to the display and vibrating based on a specified control signal, a memory storing information about the user input, and a processor electrically connected to the display, the at least one piezoelectric element, and the memory. The processor applies a control signal corresponding to the user input to the at least one piezoelectric element based on the information about the user input and allows the at least one piezoelectric element vibrating depending on the control signal to output at least one of a specified vibration or a specified sound, in a display adjacent to the at least one piezoelectric element.

A seat valve (10) is described having a valve body (12) which comprises at least two fluid openings (14, 16). Furthermore, the seat valve (10) comprises at least one valve seat (20), at least one valve element (22) which can be displaced in a translatory manner and at least one actuator (24) which is formed as an electro-active polymeric actuator and cooperates with the valve element (22).

Methods to utilize piezoelectric materials as a gate dielectric in RBTs in an IC device to generate and sense higher frequency signals with high Qs and resulting devices are disclosed. Embodiments include forming, on an upper surface of a semiconductor layer, RBTs comprising even multiples of sensing RBTs and driving RBTs, each RBT including a piezoelectric gate dielectric layer, a gate, and a dielectric spacer on opposite sides of the piezoelectric gate dielectric layer and gate, wherein at least one pair of sensing RBTs is directly between two groups of driving RBTs; forming metal layers, separated by interlayer dielectric layers, above the RBTs; and forming vias through a dielectric layer above the RBTs connecting the RBTs to a metal layer.

A transducer comprising a transducer element including a plate with a through-hole and a collar projecting from the plate and defining an interior cavity in communication with the through-hole. A piezoelectric bender includes at least first and second wafer layers stacked together. The bender is coupled to a peripheral end face of the collar. The first and/or second piezoelectric wafer layers bend at a resonant frequency and generate ultrasonic waves that flow through the collar interior cavity and the plate through-hole and create an in-air pressure pattern and acoustic field at a location spaced from the transducer. A plurality of transducers may be made by providing a monolithic transducer element structure including a plurality of the transducer elements formed thereon, coupling either a plurality of benders or a monolithic bender to the plurality of transducer elements, and then cutting the monolithic transducer element structure to define a plurality of individual transducers.

A method for forming a MEMS device is provided. The method includes forming a stack of layers on a base piezoelectric layer. The stack of layers includes a base metal film over the base piezoelectric layer; a first piezoelectric film over the base metal film; and a first metal film having an opening therein over the first piezoelectric film. The method also includes forming a trench in the stack of layers, wherein the trench passes through the opening in the first metal film but does not expose the base metal film; after forming the trench, forming a spacer structure under the first metal film but spaced apart from the base metal film; after forming the spacer structure, deepening the trench to expose the base metal film; and forming a contact in the trench.

A semiconductor substrate and a package structure including the same are provided. The semiconductor substrate includes a first surface and a second surface. The first surface includes a filtering region. The second surface is opposite to the first surface and includes an amplifying region.

A piezoelectric element includes first and second electrodes, a first piezoelectric body layer, and a plurality of first through-hole conductors. The first and second electrodes oppose each other. The first piezoelectric body layer is disposed between the first electrode and the second electrode. The plurality of first through-hole conductors penetrates the first piezoelectric body layer and is connected to the first electrode and the second electrode. When seen in an opposing direction of the first and second electrodes, the plurality of first through-hole conductors is arrayed in a matrix.