A piezoelectric element includes an element layer, an electrode layer including one or more positive electrode layers and one or more negative electrode layers repeatedly stacked to alternate with each other on the element layers in a vertical direction, a primary positive electrode connection member connecting the positive electrode layers, a primary negative electrode connection member connecting the negative electrode layers, at least one secondary positive electrode connection member, at least one secondary negative electrode connection member, and a primary electrode connected to the primary positive electrode connection member and the primary negative electrode connection member and configured of a pair of electrodes, and at least one secondary electrode spaced apart from the primary electrode and configured of a pair of electrodes.

In one example, an apparatus comprises a substrate, a first piezoelectric flap, and a second piezoelectric flap. The substrate has an opening. The first piezoelectric flap has a first end on the substrate and has a first portion extending over a first part of the opening, the first piezoelectric flap including first electrodes, in which the first electrodes extend no more than half of a first length of the first portion. The second piezoelectric flap has a second end on the substrate and has a second portion extending over a second part of the opening, the second piezoelectric flap including second electrodes, in which the second electrodes extend no more than half of a second length of the second portion.

A piezoelectric element includes an element layer, an electrode layer including one or more positive electrode layers and one or more negative electrode layers repeatedly stacked to alternate with each other on the element layers in a vertical direction, a primary positive electrode connection member connecting the positive electrode layers, a primary negative electrode connection member connecting the negative electrode layers, at least one secondary positive electrode connection member, at least one secondary negative electrode connection member, and a primary electrode connected to the primary positive electrode connection member and the primary negative electrode connection member and configured of a pair of electrodes, and at least one secondary electrode spaced apart from the primary electrode and configured of a pair of electrodes.

An architecture of an Electro-Acoustic Module (EAM) of an ultrasound probe is provided. In one example, the EAM includes a rigid interposer positioned between an Application Specific Integrated Circuit (ASIC) chip of the EAM and a flex interconnect coupled to a connector of the EAM, where the interposer facilitates an electrical interconnection between a plurality of transducer cells of the EAM, the ASIC, and the flex interconnect. The interposer may be electrically coupled to the flex interconnect at either a top side or a bottom side of the interposer, via Anisotropic Conductive Film (ACF) and/or Anisotropic Conductive Paste (ACP) or via wire bonds.

A piezoelectric element includes a piezoelectric body, an external electrode, and an internal electrode. The piezoelectric body includes first and second main surfaces opposing each other. The external electrode is disposed on the first main surface and has a first polarity. The internal electrode is disposed in the piezoelectric body to oppose the external electrode in a direction in which the first main surface and the second main surface oppose each other and has a second polarity different from the first polarity. A region from the internal electrode to the external electrode in the piezoelectric body is a polarizing region, and a region from the internal electrode to the second main surface in the piezoelectric body is a non-polarizing region.

A button device includes a piezoelectric element which includes a piezoelectric body with one surface on which a first external electrode and a second external electrode are formed and a plate with one surface attached to the other surface of the piezoelectric body, a supporting plate disposed on the one surface of the piezoelectric body, a cover disposed on the other surface of the plate, a first spacer provided between an edge portion of the one surface of the plate and the supporting plate, a second spacer provided between at least a part of an edge portion of the other surface of the plate and the cover to provide a separation space between the plate and the cover, and a dot provided in the separation space to transfer an external force to the piezoelectric element or to transfer a vibration of the piezoelectric element to the cover.

Disclosed are multi-poled piezoelectric devices with improved packing density and methods for making such multi-poled piezoelectric devices with improved packing density. The multi-poled piezoelectric devices comprise: a) a top electrode, a piezoelectric layer, and a bottom electrode fabricated on a substrate; b) vias generated by etching the piezoelectric layer, the top electrode, or both; and c) a re-distribution layer (RDL) deposited over one or more of: the top electrode, the piezoelectric layer, the bottom electrode, or the one or more vias.

A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.

An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction crossing a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave of a thickness slip first-order mode. The acoustic wave device includes first and second resonators. Each of the first and second resonators includes the first and second electrodes, and a setting portion including a setup region where the first and second electrodes are provided in the piezoelectric layer. The thickness of each of the first and second resonators excludes the thickness of the first and second electrodes included in the resonator. The thickness of the first resonator is different from the thickness of the second resonator.

A piezoelectric element assembly of this invention includes a piezoelectric element with upper and lower electrodes forming an external electrode and an internal electrode, and a wiring structure including first and second wirings electrically connected to the external and internal electrodes, respectively, wherein the piezoelectric element includes lower and internal electrode terminals away from the upper electrode through lower-electrode-side and internal-electrode-side gaps, respectively. The first wiring is bonded to a first conductive bonding material integrally covering parts of the lower electrode terminal and the upper electrode. The second wiring is bonded to a second conductive bonding material covering the internal electrode terminal. An internal-electrode-terminal facing area of the upper electrode facing the internal electrode terminal through the internal-electrode-side gap is covered with an insulating film.