The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Equipment for manufacturing ceramic wires is disclosed. The manufacturing equipment can comprise a deposition unit for depositing the ceramic wire on a wire substrate, a loading/unloading unit having a release reel for providing the wire substrate to the deposition unit and a coiling reel for discharging the wire substrate from the deposition unit, and at least one buffer unit arranged between the loading/unloading unit and the deposition unit. The buffer unit may continuously be providing the wire substrate to the deposition unit or continuously winding the wire substrate from the deposition unit when the release reel or the coiling reel is replaced.

According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

A coated conductor comprises a substrate supporting a ReBCO superconductor adapted to carry current in a superconducting state. The superconductor is characterized in having peaks in critical current (J.sub.c) of at least 0.2 MA/cm.sup.2 in a magnetic field of about 1 Tesla when the field is applied normal to the surface of the superconductor and when the field is applied parallel to the surface of the superconductor, and further characterized in that the superconductor includes horizontal defects and columnar detects in a size and an amount sufficient to result in the said critical current response. The conductor is characterized in that the ratio of the height of the peaks in the J.sub.c is in the range from 3:1 with the ratio of the field perpendicular (0 degrees) to the field parallel (+/90 degrees) to the range from 3:1 with the ratio of the field parallel to the field perpendicular.

According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Provided is a method of forming a superconducting wire, the method including forming a superconducting precursor film on a substrate, the super conducting precursor film containing Re, Ba, and Cu having a composition in which Ba is poor and Cu is rich compared to stoichiometric ReBCO(Gd.sub.1Ba.sub.2Cu.sub.3O.sub.7y, 0y6, Re: Rare earth element), heating the substrate to melt the superconducting precursor film, providing an oxygen gas having an oxygen partial pressure of about 10 mTorr to about 200 mTorr on the molten superconducting precursor film to form a superconducting layer including an epitaxial superconductor biaxially aligned only in the c-axis direction perpendicular to the substrate, and cooling the substrate.

The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

In one embodiment, a method to form a superconductor device includes depositing a crystalline layer having a preferred crystallographic orientation on a substrate and forming an oriented superconductor layer comprising an oriented superconductor material on the crystalline layer. A metallic layer is formed on the superconductor layer and a mask is provided proximate the substrate to define a protected portion of the oriented superconductor layer and an exposed portion of the oriented superconductor layer. The exposed portion of the oriented superconductor layer is removed without etching the protected portion of the oriented superconductor layer.