A frequency-dependent resistance element includes an element assembly composed of a sintered magnetic material and a coil conductor embedded in the element assembly. The sintered magnetic material is composed of a primary component containing Fe, Zn, Ni, and Cu and a secondary component containing Co. In the primary component, on a percent by mole basis, the Fe content is 46.79 to 47.69, the Zn content is 12.60 to 24.84, and the Ni content is 19.21 to 32.36 in terms of Fe.sub.2O.sub.3, ZnO, and NiO, respectively. The molar ratio (Ni:Zn) of Ni to Zn is (1X):X, where X is from about 0.28 to about 0.56. The content of Co in terms of Co.sub.3O.sub.4 is 1.0 to 10.0 parts by mass relative to 100 parts by mass of the primary component containing Fe, Zn, Ni, and Cu in terms of Fe.sub.2O.sub.3, ZnO, NiO, and CuO, respectively.

A tin-based material includes: from 50 to 100 wt. parts of grapheme; from 0 to 50 wt. parts of antimony-doped tin dioxide (ATO); from 0 to 50 wt. parts of indium-doped tin dioxide (ITO). The material includes at least ATO and/or ITO.

A method of making a hot surface igniter is described. A silicon carbide composition that includes both fines fraction and a coarse fraction is sintered in a nitrogen and argon reducing atmosphere in a manner that controls the incorporation of nitrogen with in the lattice of recrystallized silicon carbide. The controlled incorporation of nitrogen in the lattice provides enhanced control over heating and electrical properties, while simultaneously achieving a lower surface area fully recrystallized structure for oxidation resistance and long service life.

A thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The thick film resistor is formed of a fired product of a resistive composition, wherein the thick film resistor contains ruthenium-based conductive particles containing ruthenium dioxide and a glass component essentially free of a lead component and has a resistance value in the range of 100 / to 10 M/ and a temperature coefficient of resistance within 100 ppm/ C.

A negative temperature coefficient type thermistor that comprises at least two conductor terminals and a thermistor structure formed of particles of lithium manganese oxide in a spinel structure within a polymer binder. The thermistor is configured to operate in a temperature range below a predefined first temperature and the polymer binder is selected so that its heat distortion temperature is higher than the first temperature. The manufacturing process further includes a stage of calendaring the thermistor structure in a temperature that is higher than the heat distortion temperature of the polymer binder.

An electrical component provides a ceramic element located on or in a dielectric substrate between and in contact with a pair of electrical conductors, wherein the ceramic element includes one or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.5 mol % throughout the ceramic element. A method of fabricating an electrical component, provides or forming a ceramic element between and in contact with a pair of electrical conductors on a substrate including depositing a mixture of metalorganic precursors and causing simultaneous decomposition of the metal oxide precursors to form the ceramic element including one or more metal oxides.

A thick film resistor excluding a toxic lead component from a conductive component and glass and having characteristics equivalent to or superior to conventional resistors in terms of, in a wide resistance range, resistance values, TCR characteristics, current noise characteristics, withstand voltage characteristics and the like. The thick film resistor is formed of a fired product of a resistive composition, wherein the thick film resistor contains ruthenium-based conductive particles containing ruthenium dioxide and a glass component essentially free of a lead component and has a resistance value in the range of 100/ to 10 M/ and a temperature coefficient of resistance within 100 ppm/ C.

The present invention relates to a thermistor paste and a manufacturing method thereof. The thermistor paste includes specific contents of thermistor powder, a glass powder, and an organic carrier, in which the organic carrier includes an organic solvent, a binder, and an additive. A thermistor semi-finished product slurry of the present invention has been sintered. The thermistor paste of the present invention excludes a precious metal, such as ruthenium, gold, or platinum, etc., so the production cost can be reduced.

The method of making a flexible elastic conductive material for strain sensor and resistance applications using rubbing-in technology is shown. The thin rubber or any conductive material (substrates) is fixed at strained condition on the solid plate, by rubbing-in technology. Nanopowder of nanomaterials (organic semiconductors, carbon nanotubes, copper doped tin oxide, manganese doped tin oxide) at room temperature are embedded into the rubber conductive material to make built-in structure of conductive flexible elastic substrates that can be used for strain sensors, gages and resistance applications. The resultant product showed good sensitivity, stability and reliability during and after the rubbing-in operation.

To provide a thick film resistor paste for a resistor having no abnormalities of cracks in appearance and sufficient surge resistance, especially for low resistance, while using lead borosilicate glass, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises a ruthenium-oxide-containing glass powder and an organic vehicle, the ruthenium-oxide-containing glass powder comprises 10 to 60 mass % of ruthenium oxide, a glass composition of the ruthenium-oxide-containing glass powder comprises 60 mass % or less of silicon oxide, 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.