A temperature sensor that includes an organic-inorganic composite negative temperature coefficient thermistor and a transistor. The organic-inorganic composite negative temperature coefficient thermistor includes a thermistor layer which includes spinel-type semiconductor ceramic composition powder containing Mn, Ni and Fe and an organic polymer component, and a pair of electrode layers. The semiconductor ceramic composition powder has a molar ratio of Mn to Ni of 85/15Mn/Ni65/35 and a Fe content of 30 parts by mole or less when a total molar amount of Mn and Ni is regarded as 100 parts by mole, and has a peak with a local maximum value of around 29 to 31 in its X-ray diffraction pattern, a half width of which peak is 0.15 or more. The transistor is electrically connected with either one of the pair of electrode layers.

A resistive memory device and a fabricating method thereof are provided. The resistive memory device includes: a first electrode electrically coupled with a first wire; a second electrode facing the first electrode and electrically coupled with a second wire, the second electrode including an oxygen vacancy reservoir and a contact electrode; and a memory cell including a variable resistive layer and being disposed between the first electrode and the second electrode. The variable resistive layer has a conductive filament. which includes oxygen vacancies and connects the first electrode and the second electrode. The oxygen vacancy reservoir is disposed on the variable resistive layer, and the contact electrode is coupled to the oxygen vacancy reservoir and the second wire. The oxygen vacancy reservoir has a volume or oxidizing power to exchange a limited amount of oxygen ions and oxygen vacancies required for switching the conductive filament with the variable resistive layer.

A temperature sensor can include a resistor, a first electrical contact at a first end of the resistor, a second electrical contact at a second end of the resistor, and a resistance measuring device. The resistor can be formed of a matrix of sintered elemental transition metal particles interlocked with a matrix of fused thermoplastic polymer particles. The resistance measuring device can be connected to the first electrical contact and the second electrical contact to measure a resistance of the resistor.

A resistive memory device and a fabricating method thereof are provided. The resistive memory device includes: a first electrode electrically coupled with a first wire; a second electrode facing the first electrode and electrically coupled with a second wire, the second electrode including an oxygen vacancy reservoir and a contact electrode, and a memory cell including a variable resistive layer and being disposed between the first electrode and the second electrode. The variable resistive layer has a conductive filament, which includes oxygen vacancies and connects the first electrode and the second electrode. The oxygen vacancy reservoir is disposed on the variable resistive layer, and the contact electrode is coupled to the oxygen vacancy reservoir and the second wire. The oxygen vacancy reservoir has a volume or oxidizing power to exchange a limited amount of oxygen ions and oxygen vacancies required for switching the conductive filament with the variable resistive layer.

A heat sink for an electronic component and its manufacturing method by applying a nanopulsed laser. The heat sink includes a body provided with an outer layer, including a surface layer having a radiative exposed surface and a layer immediately underlying the surface layer. The underlying layer is made of a material based on a metal and the surface layer is made of an oxide of said material. The outer layer includes juxtaposed nodules. The heat sink originally combines a surface chemical state promoting heat emission and a structure geometrically promoting heat exchange, in order to synergistically improve its heat dissipation capability.

A polymeric positive temperature coefficient (PPTC) device including a PPTC body, a first electrode disposed on a first side of the PPTC body, and a second electrode disposed on a second side of the PPTC body, wherein the PPTC body is formed of a PPTC material that includes a maximum of 65% by volume of a conductive filler, wherein 10%-39% by volume of the PPTC material is a conductive ceramic filler and wherein the rest of the conductive filler includes at least one of carbon and a metallic filler.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

The resistive material contains copper and manganese, an oxide film of manganese being formed on a surface of the resistive material.

A resistive memory device and a fabricating method thereof are provided. The resistive memory device includes: a first electrode electrically coupled with a first wire; a second electrode facing the first electrode and electrically coupled with a second wire, the second electrode including an oxygen vacancy reservoir and a contact electrode, and a memory cell including a variable resistive layer and being disposed between the first electrode and the second electrode. The variable resistive layer has a conductive filament, which includes oxygen vacancies and connects the first electrode and the second electrode. The oxygen vacancy reservoir is disposed on the variable resistive layer, and the contact electrode is coupled to the oxygen vacancy reservoir and the second wire. The oxygen vacancy reservoir has a volume or oxidizing power to exchange a limited amount of oxygen ions and oxygen vacancies required for switching the conductive filament with the variable resistive layer.

A temperature sensor that includes a first electrode layer, a second electrode layer, and a thermistor layer between the first and second electrode layers. The thermistor layer includes a spinel-type semiconductor ceramic composition powder containing Mn, Ni, and Fe, and an organic polymer component. In the semiconductor ceramic composition powder, the molar ratio of Mn to Ni is 85/15Mn/Ni65/35, and when the total molar quantity of Mn and Ni is 100 parts by mole, the content of Fe is 30 parts by mole or less, and the semiconductor ceramic composition powder is 2 m or less in particle size.