An apparatus for generation of coherent terahertz radiation is provided. In one example, the apparatus includes one or more multilayer tunable microcolumns. In turn, a multilayer tunable microcolumn can include a substrate, a bottom electrode, a bottom layer of a ferromagnetic material further comprising a magnon gain medium (MGM) coupled to the bottom electrode, a tunnel junction coupled to the ferromagnetic material, a spin injector coupled to the tunnel junction, a pinning layer coupled to the spin injector, a reference layer coupled to the pinning layer and a top electrode. In one example, a containment cavity encloses at least one of the multilayer tunable microcolumns. In one example, a storage cavity encloses the containment cavity.

A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB.sub.2O.sub.x, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.

In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

The invention relates to hard magnets that include an intermetallic compound having the general composition

X.sub.aX′.sub.bY.sub.cZ.sub.d where X and X′ independently from one another are representative of a 3d transition metal with unpaired electrons; Y is a 4d or 5d transition metal of groups 5, 8, 9, or 10 Z is a main group element of groups 13, 14 or 15; a and d independently from one another represent a number between 0.1 and 2.0; and b and c independently from one another represent a number between 0.0 and 2.0; such that a+b+c+d is between 3.0 and 4.0.

In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

A magnetic tunnel junction (MTJ) is disclosed wherein a nitride diffusion barrier (NDB) has a L2/L1/NL or NL/L1/L2 configuration wherein NL is a metal nitride or metal oxynitride layer, L2 blocks oxygen diffusion from an adjoining Hk enhancing layer, and L1 prevents nitrogen diffusion from NL to the free layer (FL) thereby enhancing magnetoresistive ratio and FL thermal stability, and minimizing resistance x area product for the MTJ. NL is the uppermost layer in a bottom spin valve configuration, or is formed on a seed layer in a top spin valve configuration such that L2 and L1 are always between NL and the FL or pinned layer, respectively. In other embodiments, one or both of L1 and L2 are partially oxidized. Moreover, either L2 or L1 may be omitted when the other of L1 and L2 is partially oxidized. A spacer between the FL and L2 is optional.

A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.

A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1−xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.

An apparatus is provided which comprises: a plurality of plated through holes; a material with magnetic properties adjacent to the plurality of plated through holes; and one or more conductors orthogonal to a length of the plurality of plated through holes, the one or more conductors to couple one plated through hole of the plurality with another plated through hole of the plurality such that an inductor is formed.

An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI.sub.2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm.sup.2] or more and 3 [Ωμm.sup.2] or less.