A planar coil (10) of the present disclosure includes a base (1) including a first surface (1a), a metal layer (2) located on the first surface (1a) and including a through hole (2a) and a plurality of voids (3), and a first fixing tool (8) inserted through the through hole (2a) and fixing the metal layer (2) to the first surface (1a) side of the base (1).

The present disclosure relates to a plasma generation system with a dielectric window, an inductive coil disposed on the dielectric window, a gas distribution element disposed on the dielectric window, and a gas conditioning system coupled to the gas distribution element. The gas distribution element is configured to discharge a thermally conditioned gas on the dielectric window and regulate a temperature across the dielectric window. The gas conditioning system is configured to supply the thermally conditioned gas to the gas distribution element.

According to an embodiment, an apparatus for a plasma processing system is provided. The apparatus includes an interface, a radiating structure, and conductive offsets. The interface includes a first conductive plate couplable to an RF source, a second conductive plate disposed between the RF source and the first conductive plate, and conductive concentric ring structures disposed between the second conductive plate and a substrate holder. The conductive offsets are arranged to couple the conductive concentric ring structures to the radiating structure.

Disclosed herein is an apparatus for processing a substrate using an inductively coupled plasma source. An inductively coupled plasma source utilizes a power source, a shield member, and a coil coupled to the power source. In certain embodiments, the coils are arranged with a horizontal spiral grouping and a vertical extending helical grouping. The shield member, according to certain embodiments, utilizes a grounding member to function as a Faraday shield. The embodiments herein reduce parasitic losses and instabilities in the plasma created by the inductively coupled plasma in the substrate processing system.

The inventive concept relates to an apparatus and a method for processing a substrate. In an embodiment, the apparatus includes a process chamber having a processing space inside, a support unit that supports the substrate in the processing space, a gas supply unit that supplies a process gas into the processing space, and a plasma source that generates plasma from the process gas. The support unit includes a support on which the substrate is placed, an edge ring around the substrate placed on the support, an impedance adjustment member provided below the edge ring, and a temperature adjustment member that variably adjusts temperature of the impedance adjustment member.

Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.

Described herein is a technique capable of capable of uniformly processing a surface of a substrate even when an inductive coupling type substrate processing apparatus is used. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supply part configured to supply a gas into the process chamber; a high frequency power supply part configured to supply a high frequency power; a plasma generator including a resonance coil wound on a side of the process chamber, the plasma generator configured to generate a plasma in the process chamber when the high frequency power is supplied to the resonance coil; and a substrate support on which the substrate is placed such that a horizontal center position of the substrate in the process chamber does not overlap with a horizontal center position of the resonance coil.

A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.

A processing system including an ion source having a plasma chamber to house a plasma, an extraction assembly, disposed along a side of the plasma chamber, and including at least one extraction aperture, and an antenna assembly extending through the plasma chamber. The antenna assembly may include a dielectric enclosure and a plurality of conductive antennas extending through the dielectric enclosure, the conductive antennas having respective gas ports formed therein for delivering a gas into the dielectric enclosure. The processing system may further include a temperature regulation system coupled to the conductive antennas and to the dielectric enclosure for monitoring a temperature of the dielectric enclosure and regulating the gas delivered to the conductive antennas for regulating the temperature of the dielectric enclosure.

Described herein is a technique capable of capable of uniformly processing a surface of a substrate even when an inductive coupling type substrate processing apparatus is used. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supply part configured to supply a gas into the process chamber; a high frequency power supply part configured to supply a high frequency power; a plasma generator including a resonance coil wound on a side of the process chamber, the plasma generator configured to generate a plasma in the process chamber when the high frequency power is supplied to the resonance coil; and a substrate support on which the substrate is placed such that a horizontal center position of the substrate in the process chamber does not overlap with a horizontal center position of the resonance coil.