A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

A plasma processing apparatus for performing plasma processing on a substrate includes: a plasma generator configured to generate plasma in a processing container; a support structure configured to mount the substrate on a tilted mounting surface in the processing container and rotatably support the substrate; a first slit plate made of quartz and provided between the plasma generator and the support structure, the first slit plate having first slits formed in the first slit plate; and a second slit plate made of quartz and provided between the plasma generator and the support structure and below the first slit plate, the second slit plate having second slits formed in the second slit plate, wherein the first slits are staggered from adjacent ones of the second slits in a reverse direction of a tilting direction of the mounting surface.

A plasma generation apparatus includes a housing fitted in a portion of an upper surface of a process chamber of a deposition apparatus and having a protruding portion having an elongated shape in a plan view and protruding upward from a bottom surface, a coil wound around a side surface of the protruding portion and having an elongated shape in the plan view, and an inclination adjustment mechanism configured to independently move upward and downward both ends in a longitudinal direction of the coil to change an inclination of the coil in the longitudinal direction.

The present disclosure provides an induction coil assembly and a reaction chamber. The induction coil assembly includes an induction coil arranged over a dielectric window of the reaction chamber. Two ends of the induction coil include a power input end and a ground end, respectively. A vertical spacing between the two ends of the induction coil and the dielectric window is greater than a vertical spacing between a portion between the two ends of the induction coil and the dielectric window. The induction coil and the reaction chamber provided by the present disclosure may reduce the capacitive coupling of the two ends of the induction coil by ensuring that the coupling strength of an RF magnetic field satisfies the requirement to reduce sputtering on the dielectric window and improve process results.

Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.

Disclosed is a plasma etching system, comprising a reaction chamber, a base located in the reaction chamber and used for bearing a workpiece, and a dielectric window located on the reaction chamber. Flat plate type electrodes and coil electrodes are provided on the outer surface of the dielectric window; the flat plate type electrodes are located right over the base, and the coil electrodes are arranged in the peripheral regions of the flat plate type electrodes in a surrounding manner; a Faraday shielding layer is further provided between the coil electrodes and the outer surface of the dielectric window.

An etching method according to one embodiment of the present disclosure includes step (a), step (b), step (c), step (d), and step (e). Step (a) provides a substrate that has a silicon-containing film which does not include oxygen and nitrogen, and a mask formed on the silicon-containing film. Step (b) etches the silicon-containing film with plasma generated from a first processing gas that includes a halogen-containing gas to form a recess portion. Step (c) forms an oxide film in the recess portion with plasma generated from a second processing gas that includes an oxygen-containing gas and a gas including carbon, hydrogen, and fluorine. Step (d) further etches the silicon-containing film with the plasma generated from the first processing gas after step (c). Step (e) repeatedly executes step (c) and step (d) a preset number of times.

The present disclosure relates to the field of semiconductor die etching technologies, and discloses a method for enhancing discharge in a magnetized capacitively coupled radio frequency (CCRF) discharge reactor, including: constructing a magnetized CCRF discharge reactor; and adjusting magnetic induction intensity of the magnetized CCRF discharge reactor, to enable the magnetic induction intensity to meet a relation B=(π.Math.m.sub.c)/e.Math.f.sub.rf, where in the formula, B represents the magnetic induction intensity of the magnetized CCRF discharge reactor, π represents a circumference, mc represents an electron mass, e represents an elementary charge, and f.sub.rf represents an RF frequency. In the present disclosure, power coupling efficiency can be greatly enhanced, and plasma density can be greatly increased.

An apparatus and method for real-time sensing of properties in industrial manufacturing equipment are described. The sensing system includes first plural sensors mounted within a processing environment of a semiconductor device manufacturing system, wherein each sensor is assigned to a different region to monitor a physical or chemical property of the assigned region of the manufacturing system, and a reader system having componentry configured to simultaneously and wirelessly interrogate the plural sensors. The reader system uses a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the physical or chemical property at each assigned region of the system.