A plasma processing apparatus includes: a plasma chamber including a first area and a second area; a first radio frequency (RF) power source transmitting pieces of first RF power to the first area; a second RF power source transmitting second RF power to the second area; a controller configured to control the first RF power source and the second RF power source; and a first coil and a second coil arranged in the second area, wherein the controller spatially controls plasma in the first and second areas by controlling a signal of a current applied to the first coil and a signal of a current applied to the second coil, and temporally controls the plasma in the first and second areas by controlling a signal of the first RF power transmitted from the first RF power source and a signal of the second RF power transmitted from the second RF power source.

Methods are provided herein for forming spacers on a patterned substrate. A self-aligned multiple patterning (SAMP) process is utilized for patterning structures, spacers formed adjacent mandrels, on a substrate. In one embodiment, a novel approach of etching titanium oxide (TiO.sub.2) spacers is provided. Highly anisotropic etching of the spacer along with a selective top deposition is provided. In one embodiment, an inductively coupled plasma (ICP) etch tool is utilized. The etching process may be achieved as a one-step etching process. More particularly, a protective layer may be selectively formed on the top of the spacer to protect the mandrel as well as minimize the difference of the etching rates of the spacer top and the spacer bottom. In one embodiment, the techniques may be utilized to etch TiO.sub.2 spacers formed along amorphous silicon mandrels using an ICP etch tool utilizing a one-step etch process.

Provided are an apparatus and method for processing a substrate, in which different types of plasmas are used simultaneously to complement each other's shortcomings and maximize their advantages. The apparatus for processing a substrate includes: a housing; a substrate support unit disposed inside the housing and configured to support a substrate; a shower head unit disposed inside the housing and configured to supply a process gas onto the substrate; an antenna unit disposed outside the housing; and a plasma generating unit configured to generate, inside the housing, a plasma for use in processing the substrate on the basis of the process gas, wherein the plasma generating unit generates both a first plasma and a second plasma using the antenna unit and the shower head unit as electrodes.

This invention is an antenna structure inducing plasma in a chamber with applied alternative power, comprising: a first antenna segment and a second antenna segment arranged based on a virtual central axis to have a first curvature radius and a second curvature radius respectively, the central axis crossing a first plane, and a first capacitive load electrically connecting the first antenna segment and the second antenna segment, wherein the first antenna segment extends from one end of the first capacitive load with the first curvature radius having a first length and the second antenna segment extends from other end of the first capacitive load with the second curvature radius having a second length, and wherein a sum of the first length and the second length is shorter than a circumference of the first curvature radius or the second curvature radius.

According to the present invention, provided is an inductively coupled plasma reactor including: a reaction chamber configured to provide a plasma reaction space; a ferrite core arranged to surround the plasma reaction space; and an antenna coil formed by winding a strip-shaped wire structure on the ferrite core, wherein the wire structure includes a plurality of electrically conductive wires and a covering made of a flexible material and configured to surround the plurality of electrically conductive wires.

According to one embodiment of the present disclosure, there can be provided a plasma generating device for performing plasma discharge, the plasma generating device having multiple operation modes including a first mode and a second mode, and including: a first power supply capable of changing a frequency within a first frequency range; a second power supply capable of changing a frequency within a second frequency range that is at least partially different from the first frequency range; a dielectric tube; and an antenna module including a first unit coil wound around the dielectric tube at least one time, a second unit coil wound around the dielectric tube at least one time, and a first capacitor connected in series between the first unit coil and the second unit coil.

Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.

Provided is a pipe holding connection structure configured so that the width of the entire structure is reduced and so that the number of parts and the number of assembly work processes are reduced. This pipe holding connection structure is provided with: a housing affixed so as to air-tightly close the opening of a vacuum container; a first pipe having a portion near an end portion thereof extending through both the opening and the housing; and a second pipe having a female thread part engaging with a male thread part located at the end portion. The pipe has a locking part. Fluid is caused to flow through both the pipes. Pieces of packing are provided between the pipe and the housing and between the pipe and an end portion of the pipe, respectively. This pipe holding connection structure can be used for a high-frequency antenna device.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting a process chamber; a first gas supplier provided with a first supply port through which a first process gas is supplied; a second gas supplier provided with a second supply port through which a second process gas is supplied; a plasma generator provided along an outer circumference of the process vessel and configured to be capable of plasma-exciting the first process gas supplied into the process chamber; and a substrate mounting table on which a substrate is placed. The second supply port is provided at a supply pipe extending downward from a position in a ceiling surface of the process chamber located closer to a radial center of the process vessel than the first supply port, and is provided below the first supply port.

Provided is a plasma generator for improving uniformity of plasma. The plasma generator which includes a pair of source electrode unit 110 and bias electrode unit 120 disposed to face each other in a vacuum chamber and an RF power unit 132 and a bias RF power unit 142 supplying RF power to the source electrode unit 110 and the bias electrode unit 120, respectively, comprises a common contact point cc which is connected with a plurality of contact points cp disposed along the edge of the source electrode unit 110; and an impedance controller 150 which is connected with the common contact point cc to control the impedance.