A Faraday shielding apparatus includes a Faraday shielding plate and a heating circuit; the Faraday shielding plate includes a conductive ring and a plurality of conductive petal-shaped members radially symmetrically connected to the outer periphery of the conductive ring; when the heating circuit is used in the etching process, the Faraday shielding plate is heated by electricity. During the etching process, the heating circuit is conductively connected to the Faraday shielding plate, increasing the temperature of the Faraday shielding plate when it is energized, heating a medium window and reducing the amount of product deposits. During the cleaning process, the heating circuit and the Faraday shield are turned off, and the Faraday shielding plate is connected to a shielding power supply to clean the dielectric window. The output terminal of the heating power supply is filtered by way of a filter circuit unit, then connected to the Faraday shielding plate.

A Faraday shielding apparatus includes a Faraday shielding plate and a resistance wire attached to the lower end of the Faraday shielding plate; the Faraday shielding plate includes a conductive ring and a plurality of conductive petal-shaped members radially symmetrically connected to the outer periphery of the conductive ring; and an insulating and thermally conductivity layer is on the outer surface of the resistance wire. During the etching process, the heating circuit and the resistance wire are conductively connected, increasing the temperature of the resistance wire when it is energized. The Faraday shielding plate is between a radio frequency coil and the resistance wire to form a shield. The output terminal of the heating power supply is filtered by way of a filter circuit unit, then is connected to the resistance wire, preventing coupling between the radio frequency coil and the resistance wire.

A component for use in a plasma processing chamber is provided. A component body has a plasma facing surface. A coating is over the plasma facing surface, wherein the coating is formed by a method comprising spraying a surface of the component body with a spray formed from atomic layer deposition (ALD) coated particles to form the coating.

A substrate processing system includes a gas source, an RF source, and a light source. The gas source supplies a first gas to a process module of the substrate processing system. The RF source supplies RF power to the process module to generate plasma when the first gas is supplied to the process module of the substrate processing system. The light source is coupled to the process module to introduce light into the process module during the plasma generation.

A substrate treating apparatus includes a process treating unit providing a treating space for treating a substrate and a plasma generation unit provided above the process treating unit and generating a plasma from a process gas. The plasma generation unit includes a plasma chamber having a discharge space formed therein, an antenna surrounding an outside of the plasma chamber and flowing a high frequency current therethrough, and a cover member surrounding an outside of the antenna, and wherein the cover member is grounded.

A plasma processing apparatus includes a chamber, a window plate disposed in an upper portion of the chamber and having a fastening hole defined therein, an injector having a body part including a plurality of nozzles and configured to be fastened to the fastening hole, and a flange part extending radially from the body part to partially cover a bottom surface of the window plate when the body part is fastened to the fastening hole, and a stopper configured to be fastened to the body part on an upper surface of the window plate to hold the injector in the fastening hole when the body part is fastened to the fastening hole.

The present disclosure provides a semiconductor reaction chamber and an atomic layer plasma etching apparatus. The semiconductor reaction chamber includes a dielectric window and a reaction chamber body. The spray head is arranged between the dielectric window and the top wall of the reaction chamber body, and divides the plasma generation area into an upper strong plasma area and a lower weak plasma area. Moreover, a plurality of through-holes are distributed in the central area of the spray head and configured to allow the plasma in the strong plasma area to pass through. A first gas channel is arranged in an edge area of the spray head. The process reaction gas inlet member is located on a side where the gas inlet end of the first gas channel of the spray head is located. A second gas channel is arranged in the process reaction gas inlet member.

In one embodiment, the disclosed apparatus is a heat-pipe cooling system that includes a conical structure having an upper portion that is truncated. The conical structure is configured to be formed above a dielectric window with the conical structure being configured to condense vapor from a heat-transfer fluid placed or formed within a volume formed between the dielectric window and the conical structure. At least one cooling coil is formed on an exterior portion of the conical structure. Other apparatuses and systems are disclosed.

A plasma processing apparatus 10 includes: a stage 11 for placing an object to be processed; a chamber 12 housing the stage 11, and having a first opening 12a at a top; a first dielectric member 13 forming a first space Si in the chamber 12 by closing the first opening 12a, and having a second opening 13a; a second dielectric member 15 forming a second space S2, the second space communicating with the first space S1 via the second opening 13a and extending more upward than the first dielectric member 13; and first and induction coils 16 and 17 for generating a plasma for processing the object, the former provided above the first dielectric member 13 so as to extend from a central side toward an outer peripheral side of the first dielectric member 13, and the latter provided so as to surround the second dielectric member 15.

Implementations of the present disclosure include methods and apparatuses utilized to reduce particle generation within a processing chamber. In one implementation, a lid for a substrate processing chamber is provided. The lid includes a cover member having a first surface and a second surface opposite the first surface, a central opening through the cover member, wherein an inner profile of the central opening includes a first section having a first diameter, a second section having a second diameter, and a third section having a third diameter, wherein the second diameter is between the first diameter and the third diameter, and the first diameter increases from the second section toward the first surface of the cover member, and a trench formed along a closed path in the first surface and having a recess formed in an inner surface of the trench.