Patent classifications
H01J37/32183
SOLID-STATE MATCH (SSM)-GENERATOR SYNCHRONIZATION
This disclosure describes systems, methods, and apparatuses for a power system comprising a generator connected to a solid-state match network and a synchronization module connected to the generator and the solid-state match network, wherein the synchronization module is configured to synchronize a power delivered by the generator to the match network with the opening and closing of switches in the solid-state matching network.
TWO-STAGE SOLID-STATE MATCH
This disclosure describes systems, methods, and apparatuses for a two-stage solid state match having a load side and a source side; a first coarse stage and a second precision stage, wherein the first coarse stage is coupled between the second precision stage and the load side, and wherein the second precision stage is coupled between the source side and an input of the first coarse stage; the coarse first stage comprising at least one switched variable reactance element, wherein the coarse first stage is configured to map a load impedance connected to the load side to a first number of intermediate impedances at the input of the first coarse stage; and wherein the second precision stage is configured to map at least one of the intermediate impedances to a second number of input impedances at the source side.
Method of temperature measurement used in radio-frequency processing apparatus for semiconductor
A method for temperature measurement used in an RF processing apparatus for semiconductor includes generating by electrodes an RF signal sequence having multiple discontinuous RF signals that are separated by a time interval; and generating a temperature sensing signal by a thermal sensor during the time interval.
Plasma processing apparatus and etching method
A substrate support is provided in a chamber of a plasma processing apparatus according to an exemplary embodiment. The substrate support has a lower electrode and an electrostatic chuck. A matching circuit is connected between a power source and the lower electrode. A first electrical path connects the matching circuit and the lower electrode to each other. A second electrical path different from the lower electrode is provided to supply electric power from the matching circuit to a focus ring. A sheath adjuster is configured to adjust a position of an upper end of a sheath on/above the focus ring. A variable impedance circuit is provided on the first or second electrical path.
RF power generator with analogue and digital detectors
Provided is a generator including a power amplifier, at least one sampler, an RF output, a signal generator, a controller including a digital control portion and an analogue control portion, an analogue feedback path between the at least one sampler and the controller enabling an analogue signal representation of a signal to be provided to the controller, and a digital feedback path between the at least one sampler and the controller enabling a digital signal representation of the signal to be provided to the controller. The controller is configured to adjust the RF signal at the RF output from a first state into a second state based on the analogue signal representation and/or the digital signal representation.
Plasma processing apparatus
There is provision of a plasma processing apparatus including a processing vessel, a first member provided in the processing vessel, and a second member provided outside the first member. In at least one of the first member and the second member, a gas flow passage is formed, and the gas flow passage is configured to cause a gas to flow into a gap between the first member and the second member.
Inspection method and plasma processing apparatus
An inspection method is provided. The inspection method includes monitoring power of a reflected wave of a power wave supplied from a source power supply for generation of plasma in a plasma processing apparatus, and obtaining a fluctuation amount of a measured value within a period after initiation of the supply of the power wave. The fluctuation amount of the measured value is a fluctuation amount indicating a fluctuation in a peak-to-peak voltage at a lower electrode of the substrate support in the chamber or a fluctuation amount indicating a fluctuation in impedance of a load including the lower electrode.
Voltage clamp and current clamp systems with power recovery
Various embodiments are directed to a voltage clamp system comprising: a rectifier; a protected node, a reference node, and one or more internal nodes, coupled to the rectifier; a power converter, coupled to the rectifier via the one or more internal nodes; and one or more output nodes coupled to the power converter and configured to couple to a power sink. The rectifier and the power converter are configured to output power via one or more output nodes coupled to the rectifier, and to limit a component of the voltage between the protected node and the reference node.
Power Supply and Method of Supplying Power To Load
A power supply includes an inverter configured to direct current (DC) power into alternating current (AC) power, an impedance matching circuit configured to supply the AC power to a load; and a controller configured to adjust disposition of a powering period, in which the AC power is output, and a freewheeling period, in which the AC power is not output, to adjust a power amount of the power supplied to the load through the impedance matching circuit by the inverter.
SYMMETRIC SEMICONDUCTOR PROCESSING CHAMBER
In one example, a flow module. The flow module has an inner wall and an outer wall equal-distant from the central axis. The flow module has radial walls connected between the outer wall and the inner wall, wherein the outer wall, inner wall and two or more pairs of radial walls define evacuation channels and a center portion. The center portion and evacuation channels are fluidly isolated from each other in the flow module. Two or more through holes are formed through the outer wall and fluidly coupled to the center portion. At least two of the two or more through holes are 180 degrees apart and linearly aligned through the central axis.