In one exemplary embodiment, a second waveguide is connected to an upper wall of a first waveguide and communicates with the first waveguide, a dielectric window is in contact with a lower wall of the first waveguide, a first inner conductor penetrates an upper wall, is electrically connected with the upper wall, and extends along the direction of a tube axis from an inside of the first waveguide to an inside of a third waveguide, the third waveguide is connected to the lower wall on the dielectric window side and communicates with the first waveguide, a first opening end of the third waveguide is connected to the dielectric window, and a drive device is connected to the first inner conductor, and is configured to drive the first inner conductor in the direction of the tube axis.

An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.

Embodiments of the inventive concepts provide an antenna, a microwave plasma source including the antenna, a plasma processing apparatus including the antenna, and a method of manufacturing method of a semiconductor device. The antenna includes a lower ring having a plurality of output slits, and an upper ring disposed on the lower ring. The upper ring has an input slit transmitting microwave power from an outside of the upper ring onto the lower ring. The upper ring is configured to rotate with respect to the lower ring.

An apparatus includes: a rotatable table for revolving a substrate mounting region on which a substrate is mounted about a rotational center thereof; a first gas supply part for supplying a source gas to a first region through injection portions formed to face the rotatable table; an exhaust part for exhausting a gas through an exhaust port; a second gas supply part for supplying a separation gas for separating inner and outer sides of a second closed path from each other; a third gas supply part including two gas injectors arranged to extend at a certain interval in the crossing direction; a plasma generation part for reaction gas for plasmarizing the reaction gas injected toward the second region; and other process regions in which processes different from the supply of the source gas and the supply of the reaction gas are performed.

Disclosed is a plasma processing apparatus including: a processing container that defines a processing space; a microwave generator that generates microwaves for plasma excitation; a dielectric having a facing surface that faces the processing space; a slot plate provided on a surface of the dielectric opposite to the facing surface and formed with a plurality of slots that radiate the microwaves to the processing space through the dielectric; and a conductor pattern that is provided on the facing surface of the dielectric and converges an electric field corresponding to the microwaves radiated from each of the slots.

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MCPR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.

In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H.sub.2O and can provide at least about 30 cfm of air.

Disclosed herein are plasma chamber components that comprise a ceramic sintered body comprising at least one first layer comprising a surface having a surface area and at least one crystalline phase of from 90% to 99.8% by volume of poly crystalline yttrium aluminum garnet (YAG), at least one second layer comprising alumina and zirconia wherein the zirconia comprises at least one of stabilized and partially stabilized zirconia, and optionally, at least one third layer comprising at least one selected from the group consisting of YAG, alumina, and zirconia.

There is provided a plasma processing apparatus including: a chamber having a processing space in which a plasma processing is performed on a substrate and a synthetic space in which electromagnetic waves are synthesized; a dielectric window configured to partition the processing space and the synthetic space; an antenna unit including a plurality of antennas configured to radiate the electromagnetic waves to the synthetic space; an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit; and a controller configured to control the antenna unit to function as the phased array antenna, wherein the plurality of antennas are helical antennas.

Embodiments described herein include a processing tool that comprises a processing chamber, a chuck for supporting a substrate in the processing chamber, a dielectric window forming a portion of the processing chamber, and a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source comprises a plurality of high-frequency emission modules. In an embodiment, each high-frequency emission module comprises, an oscillator module, amplification module, and an applicator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, the applicator is positioned proximate to the dielectric window.