Provided is a high-frequency power supply comprising: a power generator configured to generate a high-frequency power having a variable frequency; an output part configured to output the high-frequency power; a sensor configured to specify a reflection coefficient of the high-frequency power for a load connected to the output part; and a controller configured to determine a matching frequency of the high-frequency power for the load, wherein the controller is configured to: (i) obtain three reflection coefficients corresponding to a first frequency, a second frequency, and a third frequency from the sensor; (ii) determine, as the matching frequency, a frequency of a minimum point of a quadratic function that expresses the relationship between the first to third frequencies and the three reflection coefficients; and (iii) control the power generator to generate the high-frequency power having the matching frequency.

The invention relates to an apparatus for performing a plasma chemical vapor deposition process. The apparatus comprises a mainly cylindrical resonator being provided with an outer cylindrical wall enclosing a resonant cavity extending in a circumferential direction around a cylindrical axis. The resonator is further provided with side wall portions bounding the resonant cavity in the cylindrical direction, and with a slit configuration extending in a circumferential direction around the cylindrical axis providing access from the resonant cavity radially inwardly. Further, the slit configuration includes slit sections that are mutually offset in the cylindrical direction.

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power P into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power P into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

Plasma jet assemblies utilizing evanescent mode cavity resonators, and methods of making the same and using the same, are described.

Embodiments include a plasma processing tool that includes a processing chamber, and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources include an array of applicators that are positioned over a dielectric body that forms a portion of an outer wall of the processing chamber. The array of applicators may be coupled to the dielectric body. Additionally, the plurality of modular microwave sources may include an array of microwave amplification modules. In an embodiment, each microwave amplification module may be coupled to at least one of the applicators in the array of applicators. According to an embodiment, the dielectric body be planar, non-planar, symmetric, or non-symmetric. In yet another embodiment, the dielectric body may include a plurality of recesses. In such an embodiment, at least one applicator may be positioned in at least one of the recesses.

A plasma processing apparatus including a processing chamber including therein a sample stage on which a substrate to be processed is placed; a magnetic field generating unit configured to generate a magnetic field inside the processing chamber; a microwave power source configured to generate microwave power; microwave power transfer units configured to transfer the microwave power; and a microwave three-dimensional circuit unit configured to supply the transferred microwave power into a processing chamber via a dielectric window. The microwave three-dimensional circuit unit includes a branch circuit configured to branch the microwave power transferred by the microwave power transfer unit in a plurality of azimuth directions, a ring resonator configured to resonate the microwave power branched in the plurality of azimuth directions by the branch circuit, and a coaxial line configured to supply the microwave power resonated by the ring resonator into the processing chamber via the dielectric window.

Embodiments disclosed herein include dielectric resonators for microwave plasma application. In an embodiment, such an apparatus comprises a dielectric puck, where the dielectric puck has a cylindrical shape. In an embodiment, the dielectric puck comprises a first region with a first dielectric constant, and a second region with a second dielectric constant that is different than the first dielectric constant. In an embodiment, the dielectric puck further comprises a hole into a top surface of the dielectric puck.

A plasma processing apparatus comprises a processing chamber accommodating a substrate, and defining a processing space by an upper wall, a side wall, and a lower wall, a microwave generator configured to generate a microwave for generating plasma, a plurality of microwave radiators provided above the upper wall, and configured to radiate the microwave toward the processing chamber, a plurality of microwave transmission windows provided at positions corresponding to the plurality of microwave radiators in the upper wall, and formed of a dielectric, and a plurality of resonator array structures disposed on lower surfaces of the plurality of microwave transmission windows, respectively. The resonator array structures are formed by arranging a plurality of resonators that are capable of resonance with a magnetic field component of the microwave and are smaller in size than a wavelength of the microwave.

A plasma processing apparatus including a processing chamber including therein a sample stage on which a substrate to be processed is placed; a magnetic field generating unit configured to generate a magnetic field inside the processing chamber; a microwave power source configured to generate microwave power; microwave power transfer units configured to transfer the microwave power; and a microwave three-dimensional circuit unit configured to supply the transferred microwave power into a processing chamber via a dielectric window. The microwave three-dimensional circuit unit includes a branch circuit configured to branch the microwave power transferred by the microwave power transfer unit in a plurality of azimuth directions, a ring resonator configured to resonate the microwave power branched in the plurality of azimuth directions by the branch circuit, and a coaxial line configured to supply the microwave power resonated by the ring resonator into the processing chamber via the dielectric window.

Embodiments disclosed herein include a source array. In an example, a source array includes a dielectric plate having a surface. A plurality of resonators is on the surface of the dielectric plate. The source array also includes a plurality of power amplifiers. Each one of the plurality of power amplifiers is coupled to a corresponding one of the plurality of resonators.