A semiconductor processing system may include a semiconductor processing chamber configured to execute a recipe on a semiconductor wafer. The system may include a first plasma source to provide plasma to the semiconductor processing chamber and to be duty cycled during an execution of the recipe. The system may also include a second plasma source configured to maintain the plasma in the semiconductor processing chamber while the first plasma source is duty cycled.

A plasma processing apparatus includes: a processing container including a substrate support; a shower head that supplies active species of a first gas into the processing container; a first dissociation space through which the active species is supplied to the shower head; and a resonator that supplies electromagnetic waves in a VHF band or higher to the first dissociation space. The resonator includes: a cylindrical body; a gas pipe which passes through an interior of the cylindrical body, is provided along a central axis direction of the cylindrical body, and includes gas holes through which the first gas is supplied into the first dissociation space; and a dielectric window including a central portion through which the end portion of the gas pipe passes, and configured to seal a space between the gas pipe and the cylindrical body and cause the electromagnetic waves to transmit through the first dissociation space.

A plasma treatment chamber comprises a chamber body having an opening in a top surface thereof. A rotatable pedestal is within the chamber body having a support surface to hold and rotate a workpiece in a processing region. A cross-flow pumping ring is over the opening in the chamber body to inject a gas flow in a direction generally parallel to and across a surface of the workpiece. A lid is over the cross-flow pumping ring, the lid having a plurality of microwave resonators to ignite the gas flow and form plasma.

Embodiments described herein relate to an apparatus that includes a dielectric plate, and a plurality of dielectric resonators coupled to the dielectric plate. In an embodiment, the plurality of dielectric resonators are distributed across the dielectric plate in a pattern that is asymmetric in order to provide a plasma uniform flux density to an underlying substrate as the substrate is rotated.

A plasma processing apparatus comprises a processing chamber, a microwave generator, a microwave radiator, a microwave transmitting window and a resonator array structure. The processing chamber is configured to accommodate a substrate and define a processing space by a ceiling wall, a sidewall, and a bottom wall. The microwave generator is configured to generate microwaves for producing plasma. The microwave radiator is provided above the ceiling wall and configured to radiate the microwaves toward the processing chamber. The microwave transmitting window is formed of a dielectric and provided at a position of the ceiling wall corresponding to the microwave radiator. The resonator array structure is provided in at least one of the ceiling wall and the sidewall and formed by arranging a plurality of resonators that are configured to resonate with a magnetic field component of the microwaves and each having a size smaller than a wavelength of the microwaves.

A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing, including, at an upper side therein, a dielectric plate, through which microwaves are transmitted; a radio frequency power supply which supplies radio frequency power for the microwaves; a cavity resonator which resonates microwaves transmitted from the radio frequency power supply through a waveguide and is placed above the dielectric plate; and a magnetic field forming mechanism which forms a magnetic field in the processing chamber. The plasma processing apparatus further includes: a ring-shaped conductor placed inside the cavity resonator; and a circular conductor which is placed inside the cavity resonator and placed in an opening at the center of the ring-shaped conductor.

Embodiments include a plasma processing apparatus including a chamber with an inner chamber wall. A workpiece support is within the inner chamber wall, the workpiece support for supporting a workpiece in a processing region of the chamber. A resonator probe is coupled to the inner chamber wall. The resonator probe includes an exposed resonator and a buried resonator.