H01J37/32825

Method for Preparing Transparent Sheet Materials
20170350006 · 2017-12-07 ·

A method for preparing a transparent sheet material comprising an organic, polymeric substrate and inorganic layers on each side of the substrate, the method comprising the steps of: a) providing an apparatus for generating a glow discharge plasma, said apparatus comprising at least two opposing electrodes, a power supply for the electrodes and a treatment space between the electrodes; b) providing the treatment space with a gas mixture at about atmospheric pressure, the gas mixture comprising a reactive gas and a precursor; and c) moving a transparent substrate through the treatment space comprising the gas mixture at an average speed of at least 1 m/min while applying an electrical potential across the electrodes, thereby generating a glow discharge plasma in the treatment space and depositing an inorganic layer on one or both sides of the substrate; wherein the electrodes apply a discharge energy to the substrate of less than 25 J/cm.sup.2.

PLASMA LIQUID GENERATING DEVICE
20170354024 · 2017-12-07 ·

A plasma liquid generating device includes a plasma generating module, a driving circuit, an adjust-controlling module and a mixing structure. The driving circuit is coupled with the plasma generating module and configured to drive the plasma generating module to generate first type plasma particles and second type plasma particles. The adjust-controlling module is coupled with the driving circuit and configured to control the driving circuit to adjust a proportion of the first type plasma particles and the second type plasma particles generated by the plasma generating module. The mixing structure connects with the plasma generating module and configured to mix the first type plasma particles, the second type plasma particles and a liquid so as to produce a plasma liquid.

PLASMA LIQUID GENERATING DEVICE
20170348447 · 2017-12-07 ·

A plasma liquid generating device includes a tube, a plasma generating module, a flow limiting unit, and a position limiting member. The tube has at least an air inlet and a flow channel outlet. The plasma generating module is disposed adjacent to the air inlet and configured to generate plasma. The flow limiting unit is detachably disposed in the tube, and a distance between the flow limiting unit and the flow channel outlet is greater than a distance between the air inlet and the flow channel outlet. The position limiting member is detachably disposed at the flow channel outlet to limit the position of the flow limiting unit.

Substrate Processing Apparatus, Substrate Processing Method, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium
20230187180 · 2023-06-15 ·

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber; a process gas supplier through which a process gas is supplied into the process chamber; an exhauster through which an inner atmosphere of the process chamber is exhausted; a plasma generating structure configured to supply a plasma into the process chamber; a boat configured to accommodate a plurality of substrates in the process chamber; a rotary shaft configured to rotatably support the boat; and an internal conductor provided inside the rotary shaft and electrically connected to the boat; wherein the boat is made of a non-metallic material, at least a part of a surface of the boat is conductive, and the boat is configured to electrically connect the internal conductor and the plurality of substrates.

Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
11255012 · 2022-02-22 · ·

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.

Pulsed plasma chamber in dual chamber configuration

Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.

APPLICATION OF eBIP TO INSPECTION, TEST, DEBUG AND SURFACE MODIFICATIONS

An electron-beam induced plasma is utilized to establish a non-mechanical, electrical contact to a device of interest. This plasma source may be referred to as atmospheric plasma source and may be configured to provide a plasma column of very fine diameter and controllable characteristics. The plasma column traverses the atmospheric space between the plasma source into the atmosphere and the device of interest and acts as an electrical path to the device of interest in such a way that a characteristic electrical signal can be collected from the device. Additionally, by controlling the gases flowing into the plasma column the probe may be used for surface modification, etching and deposition.

PRODUCTION APPARATUS AND PRODUCTION METHOD FOR FINE PARTICLES
20170274344 · 2017-09-28 ·

A production apparatus for fine particles includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a fine particle collection device connected to the vacuum chamber and collecting fine particles. The fine particles are produced from the material by generating electric discharge inside the vacuum chamber. The apparatus includes an inner chamber which forms an outside space with respect to the vacuum chamber installed between a wall of the vacuum chamber and a plasma generation region and gas supply pipes which supply a gas to the outside space between the wall of the vacuum chamber and a wall of the inner chamber.

Atmospheric Pressure Pulsed Arc Plasma Source and Methods of Coating Therewith

An atmospheric pressure pulsed arc plasma source and method of using including a housing having a housing opening therein; an insulator tube having an insulator tube opening therein, retained within the housing opening; and a conductive tube, retained within the insulator tube opening. A nozzle is retained by the housing. A feed path is defined in the conductive tube and the nozzle and a gas feed port is operatively coupled to the feed path. Feedstock is provided in the feed path and electrically coupled to the conductive tube. A pulsed DC power source provides a pulsed voltage to the conductive tube. The plasma source emits a discharge stream having a temperature that is less than 50° C. from the nozzle and a coating is formed on a substrate.

SPATIALLY CONTROLLED PLASMA
20220270860 · 2022-08-25 ·

A plasma delivery apparatus, comprising: a plasma source provided in an outer face of the delivery apparatus, the outer face arranged for facing a substrate to be treated; a transport mechanism configured to transport the substrate and the outer face relative to each other; the plasma source comprising a gas inlet to provide gas flow to a plasma generation space; the plasma generation space fluidly coupled to at least one plasma delivery port arranged in the outer face; wherein the plasma generation space is bounded by an outer face of a working electrode and a counter electrode; the working electrode comprising a dielectric layer; at least one plasma exhaust port provided in the outer face and distanced from the plasma delivery port, to exhaust plasma flowing along the outer face via said plasma exhaust port, wherein said at least one plasma delivery port and at least one plasma exhaust port are arranged to provide at least two contiguous plasma flows flowing in opposite directions that are each generated by a respective one of at least two working electrodes; and a switch circuit for switchably providing an electric voltage to the at least two working electrodes, wherein the switch circuit operates in unison with the transport mechanism.