An apparatus may comprise a plasma deposition unit, a movement system, and a mesh system. The plasma deposition unit may be configured to generate a plasma. The movement system may be configured to move a substrate under the plasma deposition unit. The mesh system may be located between the plasma deposition unit and the substrate in which a mesh may comprise a number of materials for deposition onto the substrate and in which the plasma passing through the mesh may cause a portion of the number of materials from the mesh to be deposited onto the substrate.

A method for cleaning a surface of a substrate with an atmospheric pressure plasma process in which a plasma is generated at atmospheric pressure. The plasma has an energetic species reactive with one or more components of an undesirable material on the substrate. In this method, the plasma flows from a nozzle exit as a plasma plume exiting into an ambient environment, and the surface of the substrate is exposed to the energetic species in the plasma plume, thereby producing an activated surface capable of adhering on contact a coating material to the activated surface.

A plasma-generating device including: a pair of electrodes; a pair of holders configured to hold ends of the pair of electrodes in a protruding state; and a casing in which is formed a first recess and that is configured to combine with the pair of holders in a state with the ends of the pair of electrodes that protrude from the pair of holders inserted into the first recess, wherein the combined casing and the pair of holders contact each other only at an opposite side to a side between the ends of the pair of electrodes that project from the pair of holders.

Disclosed is a substrate treating apparatus that includes an index module including a plurality of load ports on each of which a carrier having a substrate received therein is placed and a transfer frame in which an index robot that transfers the substrate is installed, a process module that is connected with the index module and that includes process chambers in each of which the substrate is treated, and a substrate treating unit that is provided in the index module and that treats the substrate, the substrate treating unit being provided along a direction in which the plurality of load ports are arranged.

A surface processing equipment using energy beam including a multi-axis platform, a surface profile measuring device, an energy beam generator and a computing device is provided. The multi-axis platform is configured to carry a workpiece and move the workpiece to the first position or the second position. The surface profile measuring device has a working area, and the first position is located on the working area. The surface profile measuring device is configured to measure the workpiece to obtain surface profile. The energy beam generator is configured to provide an energy beam to the workpiece for processing, and the second position is located on a transmission path of the energy beam. The computing device is connected to the surface profile measuring device and the energy beam generator. The computing device adjusts the energy beam generator according to the error profile.

A plasma source has an outer surface, interrupted by an aperture for delivering an atmospheric plasma from the outer surface. A transport mechanism transports a substrate in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface the and the substrate. A first electrode of the plasma source has a first and second surface extending from an edge of the first electrode that runs along the aperture. The first surface defines the outer surface on a first side of the aperture. The distance between the first and second surface increasing with distance from the edge. A second electrode covered at least partly by a dielectric layer is provided with the dielectric layer facing the second surface of the first electrode, substantially in parallel with the second surface of the first electrode, leaving a plasma initiation space on said first side of the aperture, between the surface of the dielectric layer and the second surface of the first electrode. A gas inlet feeds into the plasma initiation space to provide gas flow from the gas inlet to the aperture through the plasma initiation space. Atmospheric plasma initiated in the plasma initiation space flows to the aperture, from which it leaves to react with the surface of the substrate.

Provided is a film forming device that deposits, on a substrate, a product generated by decomposing raw material gas by a plasma discharged from a discharge port of a double tube, the device including: an inner tube through which raw material gas containing a film-forming raw material flows and is guided to the discharge port on a downstream side; an outer tube that has the inner tube inserted thereinto and through which plasma-generating gas flows and a plasma generated by discharge is guided to the discharge port on the downstream side; a first electrode that is formed in an annular shape around the outer tube and grounded; and a second electrode that is formed in an annular shape around the outer tube and to which a voltage is applied. The second electrode is disposed on the downstream side with respect to the first electrode, and assuming that a length of the second electrode in an axial direction is L1 and a diameter of the outer tube is D1, a relationship of L1≥D1 is satisfied.

An object is to provide an atmospheric plasma processing method and an atmospheric plasma processing apparatus capable of suppressing a decrease in a processing speed caused by accompanying gas and performing highly efficient processing in a case where the processing is performed on a workpiece using atmospheric plasma by introducing plasma generation gas between a pair of electrodes and the workpiece from an inner side flow passage passing between the pair of electrodes while relatively moving the workpiece and the pair of electrodes. The object is achieved by defining p*, which is represented by Expression “p*=(h/2Uμ)×(−dP/dx)”, to satisfy 0<p*≤9 in a case where a distance between the pair of electrodes and the workpiece is denoted by h, a relative movement speed between the pair of electrodes and the workpiece is denoted by U, a viscosity of gas existing between the pair of electrodes and the workpiece is denoted by μ, a gas pressure between the pair of electrodes and the workpiece is denoted by P, and a position in a transport direction of the workpiece is denoted by x.

A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.

The present invention relates to a method for etching lithium niobate, the method including a process of etching lithium niobate using a mask pattern as a physical dry etching method using Ar plasma produced in a chamber through Ar gas, wherein in the process of etching lithium niobate, a process pressure of the chamber is maintained at 1 mTorr to 20 mTorr, and a method for forming a lithium niobate pattern using the same.