A surface treatment device includes a body and a plasma source disposed within the body. The plasma source includes a first inlet through the body and an ionization wave generator adjacent the first inlet to receive feedstock gas via the first inlet. The ionization wave generator includes a dielectric tube that necks down to define an elongated throat. The surface treatment device also includes a second inlet through the body and an expansion nozzle disposed within the body downstream of the second inlet. The second inlet is disposed at the elongated throat to provide further feedstock gas.

A plasma treatment apparatus includes a discharge device generating plasma under atmospheric pressure, and a nonmetallic tube capable of advancing the plasma generated in the discharge device. The discharge device includes a discharge body with an internal space, and the plasma being generated in the internal space. The nonmetallic tube is connected to the discharge body, and includes a material different from a material of the discharge body. The plasma is released from the nonmetallic tube to an environment under atmospheric pressure.

An embodiment of the inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a lower electrode having an upper surface, on which a substrate is positioned, and a plasma generating device provided at an upper portion of the lower electrode, having an upper electrode, and having independent discharge spaces divided by a plurality of partition walls, and a controller that performs a control to independently supply a reaction gas into the independent discharge spaces, respectively.

A method for treating a flexible plastic substrate is provided herein. The method includes establishing an atmospheric pressure plasma beam from an inert gas using a power of greater than about 90W, directing the plasma beam toward a surface of the flexible polymer substrate, and scanning the plasma beam across the surface of the polymer substrate to form a treated substrate surface.

A plasma generating apparatus according to an embodiment of the present invention comprises: a pair of electrodes arranged in a dielectric discharge tube; an initial discharge induction coil module; and a main discharge induction coil module. The initial discharge induction coil module and the main discharge induction coil module are connected to an RF power source, and the RF power source provides RF power having different resonance frequencies to the initial discharge induction coil module and the main discharge induction coil module, respectively.

A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing method including: forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes: (a) supplying a source gas to the substrate; (b) supplying a plasma-excited gas containing nitrogen and hydrogen to the substrate by exciting a gas containing nitrogen and hydrogen into a plasma state; and (c) supplying a plasma-excited inert gas to the substrate by exciting an inert gas into a plasma state, wherein a pressure of a space where the substrate is present is set to be lower in (c) than in (b).

Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON -period.

A method for sterilizing ambient air includes the steps of: a) installing a plasma-based smart window including an atmospheric pressure plasma device which includes first and second transparent flat patterned electrodes sandwiched between a light-transmissive substrate and a light-transmissive cover plate; and b) applying a power supply parameter of a predetermined magnitude between the first and second transparent flat patterned electrodes at ambient temperature and pressure to generate a surface plasma proximate to the light-transmissive substrate or the light-transmissive cover plate so as to inactivate microorganisms in the ambient air.

Disclosed is a plasma device including at least two plasma cells, and a command unit, wherein the first and the second electrodes of a given plasma cell are independent from the corresponding first and second electrodes of the contiguous plasma cells. The electrodes of contiguous plasma cells are independently connected to the command unit. The command unit includes a high voltage generator and a radiofrequency generator which are mutually protected by a filtering element.