The present invention efficiently captures a target object contained in an exhaust gas. A trap apparatus includes a tubular housing including a flow path through which an exhaust gas exhausted through an exhaust pipe flows, a plate-shaped first trap member arranged inside the housing so as to shield a central portion of the flow path when viewed in a direction along a central axis of the housing, and a plate-shaped second trap member arranged inside the housing at an interval from the first trap member in the direction along the central axis of the housing, the second trap member including an opening at a position corresponding to the first trap member.

A method of fabricating an integrated circuit is disclosed. The method of removing excess metal of a metal interconnection layer during integrated circuit fabrication process comprises the steps of: plasma etching an excess metal portion of the metal interconnection layer using plasma comprising a noble gas, for an etch duration. The method further comprises stopping the etch process prior to the excess metal portion being completely removed and thus prior to a dielectric surface upon which the metal interconnection is formed, becoming completely exposed. The remaining excess metal portion comprising excess metal residues is subsequently removed using a second etch step.

Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.

In some embodiments, the present disclosure relates to an etching apparatus. The etching apparatus includes a substrate holder disposed within a processing chamber and having a workpiece reception surface configured to hold a workpiece. A lower surface of the processing chamber has a first region that is directly below the workpiece reception surface and that is configured to receive a byproduct from an etching process. A baffle extends outward from a sidewall of the processing chamber at a vertical position between the substrate holder and the lower surface of the processing chamber. The baffle covers a second region of the lower surface. A byproduct redistributor is configured to move the byproduct from the first region of the lower surface to the second region of the lower surface that is directly below the baffle.

A method for altering surface charge on an insulating surface of a first sample includes generating first plasma inside a plasma source, causing the first plasma to diffuse into a first vacuum chamber to generate second downstream plasma, immersing the first sample in the second downstream plasma, and applying a first bias voltage to a conductive layer of the first sample, or applying a first bias voltage to a metal holder that holds the first sample.

Provided is a vacuum processing apparatus which is capable of performing baking processing of a deposition preventive plate without impairing the function of being capable of cooling the deposition preventive plate disposed inside a vacuum chamber. The vacuum processing apparatus has a vacuum chamber for performing a predetermined vacuum processing on a to-be-processed substrate that is set in position inside the vacuum chamber. A deposition preventive plate is disposed inside the vacuum chamber. Further disposed are: a metallic-made block body vertically disposed on an inner surface of the lower wall of the vacuum chamber so as to lie opposite to a part of the deposition preventive plate with a clearance thereto; a cooling means for cooling the block body; and a heating means disposed between the part of the deposition preventive plate and the block body to heat the deposition preventive plate by heat radiation.

A filter for a pulsed laser deposition device includes a housing with two pass-through openings arranged in the housing wall and forming a pass-through channel for passing at least part of the plasma plume through the housing, which pass-through channel extends from one side of the housing to an opposite side of the housing, at least one primary blade arranged at a distance from and rotatable around a rotation axis, with the path of the at least one primary blade intersecting with the pass-through channel and with the at least one primary blade having a contact surface for contact with the plasma plume, and a drain channel connecting to a drain opening arranged in the housing wall.

Disclosed is a plasma generating device which includes a reactor body having a gas injection hole on one side thereof, and a collector connected to an opposite side of the reactor body and having a collection space in an interior thereof. The reactor body and the collector provide a reaction space having a plasma channel in an interior thereof.

Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.

A substrate processing system includes a vacuum transfer module, a substrate processing module, an atmospheric transfer module, a load-lock module, at least one substrate transfer robot disposed in the vacuum transfer module and the atmospheric transfer module, and having at least one end effector, and a controller configured to control a particle removal operation. The particle removal operation includes transferring said at least one end effector in any one of the vacuum transfer module, the substrate processing module, the load-lock module, and the atmospheric transfer module in a state where at least one charging member that is charged is placed on said at least one end effector.