The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.

A method for machining a sputtering target that includes a sputtering surface, an opposing surface opposite to the sputtering surface, and an outer peripheral surface being between the sputtering surface and the opposing surface comprises the steps of: fixing the sputtering target on a fixing table by mounting the sputtering surface or the opposing surface of the sputtering target on the fixing table; and cutting the outer peripheral surface of the sputtering target by a cutting tool while rotating the cutting tool along a circumferential direction of the outer peripheral surface of the sputtering target.

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

A film forming apparatus 1 includes a target TA, a ring-shaped shield member 30 provided between the target TA and a plasma generation unit, and a ring-shaped shield member 40 provided between the target TA and a workpiece holding unit. The target TA includes a cylindrical target member 21 and a backing tube (supporting member) 20 configured to support the target member 21. Each of the shield member 30, the shield member 40, and the target member 21 is stacked in a Z direction around an axis VL1 as a central axis extending in the Z direction, each of the shield member 30, the target member 21, and the shield member 40 is arranged so as to be separated from each other in the Z direction, and an inner diameter D1 of the shield member 30 is smaller than an inner diameter D2 of the target member 21.

A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.

A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas.

A rotatable sputtering target is provided for use in a sputtering system having a plurality of hollow sleeves of sputtering material arranged on a hollow e backing tube so as to form an annular space that is occupied by a bonding agent and a thermally conductive element which is a woven metal mesh.

The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.

An object is to extend the life of the target member. The target (TA2) is designed to have a symmetrical structure so as to realize an invertible configuration. According to this, even if the consumption of the target member (71) is large on the side closer to the plasma generation unit where the plasma density is high, the portion of the target member (71) which has been located on the side closer to the film formation object where the plasma density is low and is thus consumed less can be rearranged on the side closer to the plasma generation unit where the plasma density is high, by inverting the target (TA2).