A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.

In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and rejuvenated by, e.g., cold spray, is utilized in sputtering processes to produce metallic thin films.

A cathode assembly is provided in which, while preventing the occurrence of abnormal electric discharging between a projected portion of a backing plate and a side surface of a target, particles can be prevented from being generated. The cathode assembly for a sputtering apparatus of this invention has: a target made of an insulating material; a backing plate bonded to one surface of the target; and, where such a side of the backing plate as is on the side of the target is defined as a lower side, an annular shield plate disposed to lie opposite to the lower side of that projected portion of the backing plate which is projected outward beyond an outer peripheral end of the target. The cathode assembly has a bonding portion arranged to be protruded relative to the projected portion. An inner peripheral edge portion of the shield plate is positioned in a clearance between that extended portion of the target which is extended outward beyond the bonding portion in a state in which the target is kept bonded to the bonding portion, and the projected portion of the backing plate.

A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO.sub.3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.

A sputtering target assembly includes a sputtering target having a rear surface, a backing plate having a front surface, and an interlayer disposed between the target and the backing plate. The interlayer includes a first interlayer portion disposed proximate the target material rear surface, and a second interlayer portion disposed proximate the backing plate front surface. The first interlayer portion is formed of a first mixture containing a first material and a second material and having a higher concentration of the first material than the second material, and the second interlayer portion is formed of a second mixture containing the first material and the second material and having a higher concentration of the second material than the first material. A method of making is also provided.

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.

Provided is a cylindrical sputtering target material formed of copper or a copper alloy, in which an average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N which are measured with respect to the outer peripheral surfaces of both end portions and the outer peripheral surface of the center portion in an axis O direction is set to be equal to or greater than 0.5, and each measured value is in a range of ±20% with respect to the average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N, and the total amount of Si and C which are impurity elements is equal to or smaller than 10 mass ppm and the amount of O is equal to or smaller than 50 mass ppm.

A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.

A Cu—Ga sputtering target made of a composition containing: as metal components excluding fluorine, 5 atomic % or more and 60 atomic % or less of Ga and 0.01 atomic % or more and 5 atomic % or less of K; and the Cu balance containing inevitable impurities is provided. In the Cu—Ga sputtering target, the Cu—Ga sputtering target has a region containing Cu, Ga, K, and F, in an atomic mapping image by a wavelength separation X-ray detector.

A Co sputtering target having a purity of 99.99% to 99.999% and a Si content of 1 wtppm or less. Provided is a Co sputtering target capable of improving barrier properties and adhesiveness by suppressing conversion into highly reactive silicide by a reduction in the Si content in cobalt.