A multiple charged particle writing method includes performing a tracking operation by shifting the main deflection position of multiple beams using charged particle beams in the direction of stage movement so that the main deflection position of the multiple beams follows the stage movement while a predetermined number of beam shots of the multiple beams are performed, and shifting the sub deflection position of the multiple beams so that each beam of the multiple beams straddles rectangular regions among plural rectangular regions obtained by dividing a writing region of a target object into meshes by the pitch size between beams of the multiple beams, and the each beam is applied to a different position in each of the rectangular regions straddled, and applying a predetermined number of shots per beam using plural beams in the multiple beams to each of the plural rectangular regions, during the tracking operation.

In one embodiment, a charged particle beam lithography apparatus includes an irradiator 201 to irradiate substrates with charged particle beams, each of the substrates being provided with a predetermined mark, and a detector 114 to detect charged particles emitted when the predetermined mark is scanned by a charged particle beam and output a detection signal. The apparatus further includes an amplifier 124 to adjust and amplify the detection signal and output an amplified signal, and a measurement circuitry 211 to measure a location of the predetermined mark based on the amplified signal. The apparatus further includes storage 128 to store initial gain values of the amplifier for amplifying the detection signal, the initial gain values corresponding to conditions of the scan. The amplifier amplifies the detection signal based on an initial gain value selected from the initial gain values according to a condition of the scan.

A method for irradiating a target with a beam of energetic electrically charged particles, wherein the target comprises an exposure region where an exposure by said beam is to be performed, and the exposure of a desired pattern is done employing a multitude of exposure positions on the target. Each exposure position represents the location of one of a multitude of exposure spots of uniform size and shape, with each exposure spot covering at least one pattern pixel of the desired pattern. The exposure positions are located within a number of mutually separate cluster areas which are defined at respective fixed locations on the target. In each cluster area the exposure position are within a given neighboring distance to a next neighboring exposure position, while the cluster areas are separated from each other by spaces free of exposure positions, which space has a width, which is at least the double of the neighboring distance.

In one embodiment, a multi charged particle beam writing apparatus includes two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the multi charged particle beam on a substrate, which has passed through the limiting aperture member, three or more correction lenses correcting an imaging state of the multi charged particle beam on the substrate, and an electric field control electrode to which a positive constant voltage with respect to the substrate is applied, the electric field control electrode generating an electric field between the substrate and the electric field control electrode. The two or more-stage objective lenses include a first objective lens, and a second objective lens placed most downstream in a travel direction of the multi charged particle beam. The three or more correction lenses are placed upstream of a lens magnetic field of the second objective lens in the travel direction of the multi charged particle beam.

An exposure apparatus scans a substrate in a Y-axis direction and also adjusts irradiation position of a plurality of beams, based on correction information obtained from the same number of distortion tables as the beams, the distortion tables including information concerning change of irradiation position of the plurality of beams of a multibeam optical system. Especially, the irradiation position of the plurality of beams in the Y-axis direction is adjusted by individually controlling irradiation timing of the plurality of beams irradiated on the substrate from the multibeam optical system.

The disclosure relates to a photolithography method based on electronic beam. The method includes: providing an electronic beam; making the electron beam transmit a two dimensional nanomaterial to form a transmission electron beam and a number of diffraction electron beams; shielding the transmission electron beam; and radiating a surface of an object by the plurality of diffraction electron beams. The photolithography method is high efficiency and has low cost.

In one embodiment, a multi charged particle beam drawing apparatus includes an emitter emitting a charged particle beam, a shaping aperture array in which a plurality of first openings are formed, and which receives irradiation of the charged particle beam in an area including the plurality of first openings, and forms a multi-beam by allowing part of the charged particle beam to pass through a corresponding one of the plurality of first openings, a blanking aperture array in which a plurality of second openings are formed, through each of which a beam is passed, corresponding to part of the multi-beam which has passed through the plurality of first openings, the plurality of second openings each including a blanker that performs blanking deflection of a beam, and a movement controller moving the shaping aperture array or the blanking aperture array, and adjusting space between the shaping aperture array and the blanking aperture array,

In one embodiment, a charged particle beam writing apparatus includes a storage unit storing a polynomial and a correction map for correcting deviations of writing positions, a correction processing unit correcting pattern positions in a writing area of a writing target substrate by using the polynomial and correcting the pattern positions in a specific region included in the writing area by using the correction map, and a writing unit writing patterns on a substrate by using a charged particle beam in accordance with the pattern positions corrected by the correction processing unit.

Apparatus and method for aligning a rotatable substrate to a support mechanism to write a feature to the substrate, and a substrate so configured. In some embodiments, the substrate has a circumferentially extending timing pattern with spaced apart first and second timing marks disposed on opposing sides of a center point of the timing pattern and an identification (ID) field that stores a unique identifier value associated with the substrate. Upon mounting of the substrate to a support mechanism that rotates the substrate about a central axis that is offset from the center point, a control circuit generates a compensation value to compensate for the offset using the first and second timing marks and outputs a process instruction to authorize processing of the substrate using the unique identifier value. In some cases, the unique identifier value is used as a lookup to a computerized database.

An electron-beam lithography method includes, computing and outputting a development time of a positive-tone electron-sensitive layer and a parameter recipe of an electron-beam device by using a pattern dimension simulation system, performing a low-temperature treatment to chill a developer solution, utilizing an electron-beam to irradiate an exposure region of the positive-tone electron-sensitive layer based on the parameter recipe, and utilizing the chilled developer solution to develop a development region of the positive-tone electron-sensitive layer based on the development time. The development region is present within the exposure region, and an area of the exposure region is smaller than that of the first portion. As a result, the electron-beam lithography method may control a dimension of a development pattern of the positive-tone electron-sensitive layer more accurately, and may also shrink a minimum dimension of the development pattern of the positive-tone electron-sensitive layer.