Nanostructured material exhibiting a random anisotropic nanostructured surface, and exhibiting an average reflection at 60 degrees off angle less than 1 percent. The nanostructured materials are useful, for example, for optical and optoelectronic devices, displays, solar, light sensors, eye wear, camera lens, and glazing.

An apparatus for plasma processing a substrate includes a substrate holder to hold the substrate in a first portion of a vacuum chamber, and a mesh assembly segregating the first portion from a second portion of the vacuum chamber along a vertical direction, where the mesh assembly includes a vertical stack of planar meshes. The apparatus includes a mesh positioning equipment to horizontally move one of the planar meshes to adjust a vertical permeability of the stack, and a plasma generation equipment to generate plasma in the second portion of the vacuum chamber.

Processing methods may be performed to form a sidewall spacer on a semiconductor substrate. The methods may include laterally etching a first silicon-containing material relative to a second silicon-containing material. The first silicon-containing material and the second silicon-containing material may be disposed vertically from one another. The first silicon-containing material may also be positioned vertically between two regions of the second silicon-containing material. The methods may also include forming a spacer within a recess defined by the lateral etching between the two regions of the second silicon-containing material. The methods may further include forming a contact material adjacent to and contacting both the second silicon-containing material and the spacer.

The present invention has an objective to provide a processing method and an ion beam processing apparatus capable of inhibiting deposition of redeposited films even for fine patterns. In an embodiment of the present invention, ion beam processing is performed such that an etching amount of an ion beam incident in extending directions of pattern trenches formed on a substrate is made larger than the etching amount of the ion beam incident in other directions. This processing enables fine patterns to be processed while inhibiting redeposited films from being deposited on the bottom portions of the trenches of the fine patterns.

A method for anisotropically etching graphene includes generating hydrogen plasma by microwave plasma, and anisotropically etching graphene by the generated hydrogen plasma.

The present invention has an objective to provide a processing method and an ion beam processing apparatus capable of inhibiting deposition of redeposited films even for fine patterns. In an embodiment of the present invention, ion beam processing is performed such that an etching amount of an ion beam incident in extending directions of pattern trenches formed on a substrate is made larger than the etching amount of the ion beam incident in other directions. This processing enables fine patterns to be processed while inhibiting redeposited films from being deposited on the bottom portions of the trenches of the fine patterns.

A system and method for reactive ion etching (RIE) system of a material is provided. The system includes a plasma chamber comprising a plasma source and a gas inlet, a diffusion chamber comprising a substrate holder for supporting a substrate with a surface comprising the material and a gas diffuser, and a source of a processing gas coupled to the gas diffuser. In the system and method, at least one radical of the processing gas is reactive with the material to perform etching of the material, the gas diffuser is configured to introduce the processing gas into the processing region, and the substrate holder comprises an electrode that can be selectively biased to draw ions generated by the plasma source into the processing region to interact with the at least one processing gas to generate the at least one radical at the surface.

A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF.sub.3 gas, and O.sub.2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF.sub.3 gas, and O.sub.2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O.sub.2 gas according to the reduction of the HBr gas.

A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

Nanostructured material exhibiting a random anisotropic nanostructured surface, and exhibiting an average reflection at 60 degrees off angle less than 1 percent. The nanostructured materials are useful, for example, for optical and optoelectronic devices, displays, solar, light sensors, eye wear, camera lens, and glazing.