Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The insulative levels have a same primary composition as one another. At least one of the insulative levels is compositionally different relative to others of the insulative levels due to said at least one of the insulative levels including dopant dispersed within the primary composition. An opening extends vertically through the stack. Some embodiments include methods of forming integrated assemblies.

Methods of forming an oxide layer over a semiconductor substrate are provided. The method includes forming a first oxide containing portion of the oxide layer over a semiconductor substrate at a first growth rate by exposing the substrate to a first gas mixture having a first oxygen percentage at a first temperature. A second oxide containing portion is formed over the substrate at a second growth rate by exposing the substrate to a second gas mixture having a second oxygen percentage at a second temperature. A third oxide containing portion is formed over the substrate at a third growth rate by exposing the substrate to a third gas mixture having a third oxygen percentage at a third temperature. The first growth rate is slower than each subsequent growth rate and each growth rate subsequent to the second growth rate is within 50% of each other.

A laminate that can be used for diffusing an impurity diffusion component into a semiconductor substrate and manufactured by a method with good film formability, and which allows sufficient diffusion of the impurity diffusion component; a method for manufacturing the laminate; and a method for manufacturing a semiconductor substrate using the laminate. The laminate includes a diffusion-undergoing semiconductor substrate, an amine compound layer, and an impurity diffusion component layer, the amine compound layer is in contact with one main surface of the diffusion-undergoing semiconductor substrate, the impurity diffusion component layer is in contact with a main surface of the amine compound layer, the main surface is not in contact with the diffusion-undergoing semiconductor substrate, and the amine compound layer includes an amine compound including two or more nitrogen atoms and having an amino group constituted by at least one of the two or more nitrogen atoms; and/or an amine compound residue having one or more amino groups and bonding to the main surface via a covalent bond.

A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.

Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contain different types of metals which are selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

An exemplary semiconductor fabrication stack includes underlying layers; an organic planarization layer atop the underlying layers; a metal oxide hardmask atop the organic planarization layer and doped with both carbon and nitrogen; and an organic photoresist directly atop the doped metal oxide hardmask. In one or more embodiments, the doped metal oxide hardmask exhibits a water contact angle of greater than 80°.

The present disclosure provides a high electron mobility transistor including a channel layer; a barrier layer on the channel layer and configured to induce formation of a 2-dimensional electron gas (2DEG) to the channel layer; a p-type semiconductor layer on the barrier layer; a first passivation layer on the barrier layer and including a quaternary material of Al, Ga, O, and N; a gate electrode on the p-type semiconductor layer; and a source electrode and a drain electrode provided on both sides of the barrier layer and separated from the gate electrode.

A structure and formation method of a semiconductor device is provided. The semiconductor device structure includes an epitaxial structure over a semiconductor substrate. The semiconductor device structure also includes a dielectric fin over the semiconductor substrate. The dielectric fin extends upwards to exceed a bottom surface of the epitaxial structure. The dielectric fin has a dielectric structure and a protective shell, and the protective shell extends along sidewalls and a bottom of the dielectric structure. The protective shell has a first average grain size, and the dielectric structure has a second average grain size. The first average grain size is larger than the second average grain size.

A film-forming method includes: forming a first film by performing an operation of forming a unit film a plurality of times, the operation including sub-step of supplying a first raw material gas containing a first element to a substrate and causing the first raw material gas to be adsorbed thereon, and sub-step of supplying a first reaction gas to the substrate; and forming a second film on the substrate by performing an operation of forming a unit film at least once, the operation including sub-step of supplying a second raw material gas containing a second element to the substrate and causing the second raw material gas to be adsorbed thereon, and sub-step of supplying a second reaction gas to the substrate, wherein a mixed film is formed by performing the forming the first film and the forming the second film, respectively once, or a plurality of times.

A semiconductor die includes a semiconductor body, and a multi-layer environmental barrier on the semiconductor body. The multi-layer environmental barrier includes a plurality of sublayers that are stacked on the semiconductor body. Each of the sublayers comprises a respective stress in one or more directions, where the respective stresses of at least two of the sublayers are different. The sublayers may include a first stressor sublayer comprising first stress, and a second stressor sublayer comprising a second stress that at least partially compensates for the first stress in the one or more directions. Related devices and methods of fabrication are also discussed.