Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.

A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further include introducing precursors that include at least one dielectric providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool. The hydrogen precursor gas is introduced to the deposition chamber at a flow rate ranging from 50 sccm to 5000 sccm. The molar ratio for Hydrogen/Silicon gas precursor can be equal or greater than 0.05.

A substrate processing method for area selective deposition. The method includes providing a substrate containing a metal film, a metal-containing liner, and a dielectric film, exposing the substrate to a plasma-excited cleaning gas containing 1) N.sub.2 gas and H.sub.2 gas, 2) N.sub.2 gas followed by H.sub.2 gas, or 3) H.sub.2 gas followed by N.sub.2 gas, forming a blocking layer on the metal film and on the metal-containing liner, and selectively depositing a material film on the dielectric film.

Methods and associated devices including the fabrication of a semiconductor structure are described that include epitaxially growing a stack of layers alternating between a first composition and a second composition. The stack of layers extends across a first region and a second region of a semiconductor substrate. The stack of layers in the second region of the semiconductor substrate may be etched to form an opening. A passivation process is then performed that includes introducing chlorine to at least one surface of the opening. After performing the passivation process, an epitaxial liner layer is grown in the opening.

Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

Methods and associated devices including the fabrication of a semiconductor structure are described that include epitaxially growing a stack of layers alternating between a first composition and a second composition. The stack of layers extends across a first region and a second region of a semiconductor substrate. The stack of layers in the second region of the semiconductor substrate may be etched to form an opening. A passivation process is then performed that includes introducing chlorine to at least one surface of the opening. After performing the passivation process, an epitaxial liner layer is grown in the opening.

Before formation of gate insulating films, an oblique ion implantation of oxygen into opposing sidewalls of trenches, from a top of an oxide film mask is performed, forming oxygen ion-implanted layers in surface regions of the sidewalls. A peak position of oxygen concentration distribution of the oxygen ion-implanted layers is inside the oxide film mask. After removal of the oxide film mask, HTO films constituting the gate insulating films are formed. During deposition of the HTO films, excess carbon occurring at the start of the deposition of the HTO films and in the gate insulating films reacts with oxygen in the oxygen ion-implanted layers, thereby becoming an oxocarbon and being desorbed. The oxygen ion-implanted layers have a thickness in a direction orthogonal to the sidewalls at most half of the thickness of the gate insulating films, and an oxygen concentration higher than any other portion of the semiconductor substrate.

This apparatus for manufacturing a laminate comprises: a first sheet transporting device for transporting a first sheet; a water supply device for supplying an aqueous medium to the surface of the first sheet coated with a silane coupling agent and/or the surface of a second sheet coated with a silane coupling agent; and a laminating device for attaching the first sheet and the second sheet which have been supplied with the aqueous medium.

Methods and associated devices including the fabrication of a semiconductor structure are described that include epitaxially growing a stack of layers alternating between a first composition and a second composition. The stack of layers extends across a first region and a second region of a semiconductor substrate. The stack of layers in the second region of the semiconductor substrate may be etched to form an opening. A passivation process is then performed that includes introducing chlorine to at least one surface of the opening. After performing the passivation process, an epitaxial liner layer is grown in the opening.

Chromium containing precursors and methods of forming chromium-containing thin films are described. The chromium precursor has a chromium-diazadiene bond or cyclopentadienyl ligand and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic chromium film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising chromium with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described. Methods of filling gaps in a substrate with a chromium-containing film are also described.