Strain relief trenches may be formed in a substrate prior to growth of an epitaxial layer on the substrate. The trenches may reduce the stresses and strains on the epitaxial layer that occur during the epitaxial growth process due to differences in material properties (e.g., lattice mismatches, differences in thermal expansion coefficients, and/or the like) between the epitaxial layer material and the substrate material. The stress and strain relief provided by the trenches may reduce or eliminate cracks and/or other types of defects in the epitaxial layer and the substrate, may reduce and/or eliminate bowing and warping of the substrate, may reduce breakage of the substrate, and/or the like. This may increase the center-to-edge quality of the epitaxial layer, may permit epitaxial layers to be grown on larger substrates, and/or the like.

A transistor including a channel layer including an oxide semiconductor material and methods of making the same. The transistor includes a channel layer having a first oxide semiconductor layer having a first oxygen concentration, a second oxide semiconductor layer having a second oxygen concentration and a third oxide semiconductor layer having a third oxygen concentration. The second oxide semiconductor layer is located between the first semiconductor oxide layer and the third oxide semiconductor layer. The second oxygen concentration is lower than the first oxygen concentration and the third oxygen concentration.

A method includes providing a semiconductor substrate; epitaxially growing a blocking layer from a top surface of the semiconductor substrate, wherein the blocking layer has a lattice constant different from the semiconductor substrate; epitaxially growing a semiconductor layer above the blocking layer; patterning the semiconductor layer to form a semiconductor fin, wherein the blocking layer is under the semiconductor fin; forming a source/drain (S/D) feature in contact with the semiconductor fin; and forming a gate structure engaging the semiconductor fin.

Methods for forming structures that include forming a heteroepitaxial layer on a substrate are disclosed. The presently disclosed methods comprise epitaxially forming a buffer layer on the substrate. The substrate has a substrate composition. The buffer layer has a buffer layer composition. The buffer layer composition is substantially identical to the substrate composition. The presently disclosed methods further comprise epitaxially forming a heteroepitaxial layer on the buffer layer. The heteroepitaxial layer has a heteroepitaxial layer composition which is different from the substrate composition.

The present disclosure provides systems and methods for a layered substrate. A layered substrate may include a core comprising graphite. The layered substrate may also include a coating layer comprising a coating material that surrounds the core, wherein the coating material has a melting point that is greater than a melting point of silicon.

A method for manufacturing a semiconductor crystalline thin film according to a viewpoint of the present disclosure includes radiating first pulsed laser light having a first pulse duration to an amorphous semiconductor to poly-crystallize the amorphous semiconductor and radiating second pulsed laser light having a second pulse duration shorter than the first pulse duration to an area of a semiconductor crystal having undergone the poly-crystallization to lower the height of ridges of the semiconductor crystal.

Methods of semiconductor arrangement formation are provided. A method of forming the semiconductor arrangement includes forming a first nucleus on a substrate in a trench or between dielectric pillars on the substrate. Forming the first nucleus includes applying a first source material beam at a first angle relative to a top surface of the substrate and concurrently applying a second source material beam at a second angle relative to the top surface of the substrate. A first semiconductor column is formed from the first nucleus by rotating the substrate while applying the first source material beam and the second source material beam. Forming the first semiconductor column in the trench or between the dielectric pillars using the first source material beam and the second source material beam restricts the formation of the first semiconductor column to a single direction.

A transistor including a channel layer including an oxide semiconductor material and methods of making the same. The transistor includes a channel layer having a first oxide semiconductor layer having a first oxygen concentration, a second oxide semiconductor layer having a second oxygen concentration and a third oxide semiconductor layer having a third oxygen concentration. The second oxide semiconductor layer is located between the first semiconductor oxide layer and the third oxide semiconductor layer. The second oxygen concentration is lower than the first oxygen concentration and the third oxygen concentration.

Strain relief trenches may be formed in a substrate prior to growth of an epitaxial layer on the substrate. The trenches may reduce the stresses and strains on the epitaxial layer that occur during the epitaxial growth process due to differences in material properties (e.g., lattice mismatches, differences in thermal expansion coefficients, and/or the like) between the epitaxial layer material and the substrate material. The stress and strain relief provided by the trenches may reduce or eliminate cracks and/or other types of defects in the epitaxial layer and the substrate, may reduce and/or eliminate bowing and warping of the substrate, may reduce breakage of the substrate, and/or the like. This may increase the center-to-edge quality of the epitaxial layer, may permit epitaxial layers to be grown on larger substrates, and/or the like.

Strain relief trenches may be formed in a substrate prior to growth of an epitaxial layer on the substrate. The trenches may reduce the stresses and strains on the epitaxial layer that occur during the epitaxial growth process due to differences in material properties (e.g., lattice mismatches, differences in thermal expansion coefficients, and/or the like) between the epitaxial layer material and the substrate material. The stress and strain relief provided by the trenches may reduce or eliminate cracks and/or other types of defects in the epitaxial layer and the substrate, may reduce and/or eliminate bowing and warping of the substrate, may reduce breakage of the substrate, and/or the like. This may increase the center-to-edge quality of the epitaxial layer, may permit epitaxial layers to be grown on larger substrates, and/or the like.