A diffusion agent composition that can be evenly applied onto the whole area of an inner surface of the fine voids, whereby boron can be well and uniformly diffused into the semiconductor substrate even by heating at a low temperature, and a method for manufacturing a semiconductor substrate using the diffusion agent composition. In a diffusion agent composition including an impurity diffusion component, the impurity diffusion component, which can be applied onto a surface of a semiconductor substrate to form a diffusion layer, and which is a boron compound including a nitrogen atom, is used.

Protons are injected from a back surface side of a semiconductor substrate to repair both defects within the semiconductor substrate and also defects in a channel forming region on a front surface side of the semiconductor substrate. As a result, variation in gate threshold voltage is reduced and leak current when a reverse voltage is applied is reduced. Provided is a semiconductor device including a semiconductor substrate that includes an n-type impurity region containing protons, on a back surface side thereof; and a barrier metal that has an effect of shielding from protons, on a front surface side of the semiconductor substrate.

Provided is a paste composition that enables the formation of a diffusion layer with a high concentration of n-type dopant element on a semiconductor substrate in a simple manner. The paste composition is intended to form a film on a semiconductor substrate. The paste composition contains an aluminum powder, a compound containing an n-type dopant element, a resin, and a solvent. The n-type dopant element is one, two, or more elements selected from the group consisting of phosphorus, antimony, arsenic, and bismuth. The content of the n-type dopant element in the n-type dopant element-containing compound is 1.5 parts by mass or more and 1000 parts by mass or less, per 100 parts by mass of aluminum contained in the aluminum powder.

Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300 C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

An object of the present disclosure is to reduce masks and to reduce the variation in the profile of an impurity layer in a semiconductor device. A method of manufacturing a semiconductor device includes a step (b) of forming a base layer on a first main surface side of a drift layer in an active region by implanting p-type impurity ions of using the first mask, a step of (c) of forming an emitter layer on the first main surface side of the base layer by implanting n-type impurity ions using the first mask, a step (d) of forming trenches after the steps (b) and (c), a step (e) of embedding a gate electrode inside the trenches, and a step (g) of converting a part of the emitter layer into a first contact layer by implanting the p-type impurity ions having a high dosage using a second mask.

Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl.sub.3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt).sub.3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

A diffusion agent composition that, even when a semiconductor substrate which is an object into which an impurity diffusion ingredient is to be diffused has, on a surface thereof, a three-dimensional structure having nano-scale fine voids on a surface thereof, can be evenly coated on the whole area of an inner surface of the fine voids, whereby boron can be diffused into the semiconductor substrate, and a method for manufacturing a semiconductor substrate using the composition. The composition includes an impurity diffusion ingredient and a hydrolyzable Si compound to produce a silanol group, the impurity diffusion ingredient containing a complex compound containing boron having a specific structure.

A diffusing agent composition and a method of manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition contains an impurity diffusion component (A) including a first type of boron-containing compound and a second type of boron-containing compound.