Dipole engineering techniques for devices of stacked device structures are disclosed herein. An exemplary method for forming a gate stack of a transistor (e.g., a top transistor) of a transistor stack includes forming a high-k dielectric layer, forming an n-dipole dopant source layer over the high-k dielectric layer, performing a thermal drive-in process that drives an n-dipole dopant from the n-dipole dopant source layer into the high-k dielectric layer, and forming at least one electrically conductive gate layer over the high-k dielectric layer after removing the n-dipole dopant source layer. A drive-in temperature of the thermal drive-in process is less than 600? C. (e.g., about 300? C. to about 500? C.). The n-dipole dopant is strontium, erbium, magnesium, or a combination thereof. The method can further include tuning thermal drive-in process parameters to provide the gate dielectric with an n-dipole dopant profile having a peak located at a high-k/interfacial interface ?0.5 nm.

Aspects of the present disclosure include fabricating integrated circuit (IC) structures using a boron etch-stop layer, and IC structures with a boron-rich region therein. Methods of forming an IC structure according to the present disclosure can include: growing a conductive epitaxial layer on an upper surface of a semiconductor element; forming a boron etch-stop layer directly on an upper surface of the conductive epitaxial layer; forming an insulator on the boron etch-stop layer; forming an opening within the insulator to expose an upper surface of the boron etch-stop layer; annealing the boron etch-stop layer to drive boron into the conductive epitaxial layer, such that the boron etch-stop layer becomes a boron-rich region; and forming a contact to the boron-rich region within the opening, such that the contact is electrically connected to the semiconductor element through at least the conductive epitaxial layer.

One embodiment of a semiconductor device includes a fin at a first side of a semiconductor body, a body region of a second conductivity type in at least a part of the fin, a drain extension region of a first conductivity type, a source region and a drain region of the first conductivity type, a source contact in contact with the source region, and a gate structure adjoining opposing walls of the fin. The source contact extends along a vertical direction along the source region. The source contact includes a conductive material and is disposed in a trench in the semiconductor body, adjacent to the source region. The body region and the drain extension region are arranged one after another between the source region and the drain region.

A diffusing agent composition that can efficiently form a thin film in which an impurity diffusion component can be diffused into a semiconductor substrate at a higher concentration than a conventional one and a method of manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition includes an impurity diffusion component and a silane coupling agent the silane coupling agent including a group which generates a silanol group by hydrolysis and alkyl groups and at least one of the alkyl groups includes, in a chain and/or at an end, at least one amino group selected from a primary amino group, a secondary amino group and a tertiary amino group.

A method of making a MOS device, a MOS device containing an aluminum nitride layer, and a CMOS circuit are disclosed. The method includes depositing an aluminum nitride layer on a structure including a silicon layer, depositing a dopant ink on the structure, and diffusing the dopant through the aluminum nitride layer into the silicon layer. The structure also includes a gate oxide layer on the silicon layer and a gate on the gate oxide layer. The dopant ink includes a dopant and a solvent. The MOS device includes a silicon layer, a gate oxide layer on the silicon layer, a gate on the gate oxide layer, and an aluminum nitride layer on the gate. The silicon layer includes a dopant on opposite sides of the gate.

A diffusing agent composition and a method of manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition contains an impurity diffusion component (A) including a first type of boron-containing compound and a second type of boron-containing compound.

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

The present invention relates to a novel process for the preparation of printable, high-viscosity oxide media, and to the use thereof in the production of solar cells.

To provide: a purification method which uses a polyimide and/or polyamide imide porous membrane that exhibits excellent removal performance for impurities such as metals, and wherein a liquid that is a silylating agent liquid, a film forming material or a diffusing agent composition is an object to be purified; a purification method for purifying a silicon compound-containing liquid that contains a silicon compound which is capable of producing a silanol group by hydrolysis; a method for producing a silylating agent liquid, a film forming material or a diffusing agent composition, which uses the purification method; a filter medium which is composed of the above-described porous membrane; and a filter device which comprises the above-described porous membrane. A purification method for purifying a liquid, which comprises a step in which some or all of the liquid is caused to permeate through a polyimide and/or polyamide imide porous membrane having communicating pores from one side to the other side by means of differential pressure, and wherein the liquid is a silylating agent liquid, a film forming material or a diffusing agent composition that is used for diffusing a dopant into a semiconductor substrate.

A method of manufacturing an optical semiconductor device includes preparing a semiconductor substrate having a plurality of photoelectric conversion parts, forming a trench in the semiconductor substrate to separate the plurality of photoelectric conversion parts from each other, forming a boron layer on an inner surface of the trench by a vapor phase growth method, and forming an accumulation layer in the semiconductor substrate along the inner surface of the trench by performing a thermal diffusion treatment on the boron layer.