Implementations of the invention provide semiconductor devices including radiation-doped semiconductor junctions, and methods of making the same. In one embodiments, a method includes: providing a set of adjacent semiconductor layers comprising a first semiconductor layer adjacent a second semiconductor layer different from the first semiconductor layer; exposing the set of adjacent semiconductor layers to thermal neutron radiation, thereby causing a first stable isotope of the first semiconductor layer to convert to a second stable isotope, resulting in a doped first semiconductor layer; and exposing the set of adjacent semiconductor layers to thermonuclear irradiation to cause a third stable isotope of the second semiconductor layer to react, resulting in a doped second semiconductor layer; wherein the doped first semiconductor layer and the doped second semiconductor layer form a homojunction or a heterojunction.

Implementations of the invention provide semiconductor devices including radiation-doped semiconductor junctions, and methods of making the same. In one embodiments, a method includes: providing a set of adjacent semiconductor layers comprising a first semiconductor layer adjacent a second semiconductor layer different from the first semiconductor layer; exposing the set of adjacent semiconductor layers to thermal neutron radiation, thereby causing a first stable isotope of the first semiconductor layer to convert to a second stable isotope, resulting in a doped first semiconductor layer; and exposing the set of adjacent semiconductor layers to thermonuclear irradiation to cause a third stable isotope of the second semiconductor layer to react, resulting in a doped second semiconductor layer; wherein the doped first semiconductor layer and the doped second semiconductor layer form a homojunction or a heterojunction.