A plasma processing apparatus for processing an object to be processed with plasma, includes: a stage on which the object to be processed is placed; an electrode arranged at a position facing the stage and to which high-frequency power having a frequency of 30 MHz or more is supplied; and a waveguide configured to propagate electromagnetic waves generated based on the high-frequency power to a plasma processing space formed between the stage and the electrode, wherein the waveguide is formed in an annular shape in a plan view so that an end portion of the waveguide near the plasma processing space surrounds an outer periphery of the electrode, a plurality of pins are provided to protrude into the waveguide, and the plurality of pins are arranged at respective positions separated from one another along a circumferential direction in the plan view.

A chamber in which heating treatment is performed by irradiating a semiconductor wafer with light and a combustible gas supply source are connected in communication with each other by a combustible gas supply pipe. An electrical flow rate controller for regulating a supply flow rate of a combustible gas, and the like are interposed in the combustible gas supply pipe. Part of the combustible gas supply pipe which includes the electrical flow rate controller and the like that can be an ignition source is surrounded by an inner enclosure. Nitrogen which is a noncombustible gas is supplied to an inner space inside the inner enclosure. The noncombustible gas is supplied to the inner space, and a gas remaining in the inner space is discharged, whereby the concentration of oxygen in the inner space is decreased to below an explosion limit. This prevents fires and explosions of the combustible gas.

The present disclosure provides a technique that includes: loading a substrate into a process chamber in which the substrate is processed; and processing the substrate by supplying a first inert gas to a peripheral portion of the substrate and simultaneously supplying a mixed gas of a second inert gas different from the first inert gas and a process gas to a surface of the substrate.

According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device, including: (A) creating a recipe by setting opening/closing states of a plurality of valves on a gas pattern screen; and (B) processing a substrate by performing the recipe created in (A), wherein (A) includes: (a) selecting a gas pipe on the gas pattern screen when an opening/closing state of any valve among the plurality of valves changes on the gas pattern screen; and (b) confirming opening/closing states of one or more valves connected to the gas pipe selected in (a).

There is provided a substrate processing apparatus including: an inner tube including a substrate accommodating region where substrates are accommodated along an arrangement direction; an outer tube outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at an end portion of the outer tube along the arrangement direction; and a gas guide controlling gas flow in an annular space between the inner and outer tubes. A first exhaust port A is located farthest from the second exhaust port, and faces a gas supply port A. The gas guide includes a fin provided near the gas supply port A and surrounds at least a part of an outer periphery of the gas supply port A.

The cleaning method according to an embodiment of the present invention is for cleaning a plasma processing apparatus that performs a plasma processing on a substrate. This cleaning method includes: forming a protective film; and cleaning. The forming the protective film involves forming the protective film in a plasma generation region by generating plasma while supplying a film-forming gas into a processing container in which a processing space including the plasma generation region and a diffusion region is formed. The cleaning involves cleaning an interior of the processing container in which the protective film has been formed by generating plasma while supplying a cleaning gas into the processing container.

Provided is a technique of processing a substrate by executing a process recipe including a plurality of steps, the technique including: (a) acquiring vibration data of a member that exhausts an atmosphere in a process chamber that processes the substrate from a vibration sensor while executing the process recipe; and (b) detecting presence of an abnormality sign in a case where a ratio between a magnitude of vibration at a rotation frequency of the member and a magnitude of vibration at a comparison frequency that is an integral multiple of the rotation frequency exceeds a preset abnormality sign threshold on the basis of the acquired vibration data.

A substrate processing apparatus includes: a vacuum transfer chamber including a substrate transfer mechanism provided in a vacuum transfer space thereof to collectively hold and transfer substrates with a substrate holder; and a processing chamber having processing spaces and connected to the vacuum transfer chamber. The processing chamber includes a loading/unloading port provided on a side of the vacuum transfer chamber to allow the vacuum transfer space and the processing spaces to communicate with each other. The processing spaces include a first processing space in which a first process is performed on the substrate and a second processing space in which a second process is performed on the substrate subjected to the first process. The first and second processing spaces are arranged in a direction in which the substrate is loaded and unloaded, and the substrate holder has a length that extends over the first and second processing spaces.

A shower plate that includes a plate-like member provided at a top of a processing chamber is provided. The shower plate has first holes communicating with a first flow path in the shower plate. The shower plate includes first chamber valves provided with the respective first holes. The shower plate has second holes communicating with a second flow path in the shower plate. The shower plate includes second chamber valves provided with the respective second holes. The shower plate has third holes provided in the plate-like member to correspond to the first holes and the second holes. The shower plate includes third chamber valves provided with the respective third holes. The first chamber valves, the second chamber valves, and the third chamber valves are piezoelectric elements.

There is provided a technique that includes: (a) forming a first element-containing film on a substrate by supplying a first element-containing gas to the substrate in an oxygen-free atmosphere; and (b) forming an oxide film by oxidizing the first element-containing film by supplying an oxygen-containing gas to the substrate, wherein in (b), temperature of the substrate is selected depending on a thickness of the first element-containing film.