The present disclosure relates to an integrated chip device. The integrated chip device includes a plurality of conductive lines disposed over a substrate. The plurality of conductive lines are stacked onto one another and are separated from one another by dielectric layers interleaved between adjacent ones of the plurality of conductive lines. A ferroelectric layer is along sidewalls of the plurality of conductive lines and the dielectric layers. The ferroelectric layer separates a channel layer from the plurality of conductive lines. A species is disposed within the ferroelectric layer. The species has a concentration that decreases from the channel layer towards a surface of the ferroelectric layer that faces away from the channel layer.

The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

A thin film transistor and manufacturing method thereof, an array substrate and a display device are disclosed. The thin film transistor includes a source electrode, a drain electrode and an active layer; the source electrode, the drain electrode and the active layer are disposed in a same layer, the source electrode and the drain electrode are separately joined to the active layer through their respective side faces, a material of the source electrode and the drain electrode is metal, and a material of the active layer is a metal oxide semiconductor in correspondence with material of the source electrode and the drain electrode. With the thin film transistor, procedures can be decreased, thereby reducing costs.

A thin film transistor and manufacturing method thereof, an array substrate and a display device are disclosed. The thin film transistor includes a source electrode, a drain electrode and an active layer; the source electrode, the drain electrode and the active layer are disposed in a same layer, the source electrode and the drain electrode are separately joined to the active layer through their respective side faces, a material of the source electrode and the drain electrode is metal, and a material of the active layer is a metal oxide semiconductor in correspondence with material of the source electrode and the drain electrode. With the thin film transistor, procedures can be decreased, thereby reducing costs.

A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

An etch stop layer (ESL) thin-film transistor (TFT) substrate includes an active layer including a channel zone and two opposite side zones that are made conducting through treatment with plasma doping so that a distance between the two side zones is a width of the channel zone that is smaller than a distance between a source electrode and a drain electrode in electrical connection with the two opposite side zones respectively, so as to make a relatively small actual channel length. Such a relatively small actual channel length provides the TFT with an excellent electrical conduction property and has an advantage of increasing a source-drain current.

An etch stop layer (ESL) thin-film transistor (TFT) substrate includes an active layer including a channel zone and two opposite side zones that are made conducting through treatment with plasma doping so that a distance between the two side zones is a width of the channel zone that is smaller than a distance between a source electrode and a drain electrode in electrical connection with the two opposite side zones respectively, so as to make a relatively small actual channel length. Such a relatively small actual channel length provides the TFT with an excellent electrical conduction property and has an advantage of increasing a source-drain current.

One embodiment of the present invention provides a method of manufacturing an electronic device using a cyclic doping process including i) an operation of forming a unit transfer thin film including a two-dimensional material on a transfer substrate, ii) an operation of doping the unit transfer thin film in a low-damage doping process, iii) an operation of transferring the unit transfer thin film doped according to the operation ii) on a transfer target substrate, and iv) an operation of repeatedly performing the operations i) to iii) several times to reach a target thickness.